SG125918A1 - Fabrication of an embossed diaphragm - Google Patents

Fabrication of an embossed diaphragm

Info

Publication number
SG125918A1
SG125918A1 SG200303832A SG200303832A SG125918A1 SG 125918 A1 SG125918 A1 SG 125918A1 SG 200303832 A SG200303832 A SG 200303832A SG 200303832 A SG200303832 A SG 200303832A SG 125918 A1 SG125918 A1 SG 125918A1
Authority
SG
Singapore
Prior art keywords
fabrication
embossed
diaphragm
embossed diaphragm
Prior art date
Application number
SG200303832A
Inventor
Chong Wai Mun
Kathirgamasundaram Sooriakumar
Ong Kok Meng
Arnold Bacal Corrales
Original Assignee
Sensfab Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensfab Pte Ltd filed Critical Sensfab Pte Ltd
Priority to SG200303832A priority Critical patent/SG125918A1/en
Publication of SG125918A1 publication Critical patent/SG125918A1/en

Links

SG200303832A 2003-07-17 2003-07-17 Fabrication of an embossed diaphragm SG125918A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200303832A SG125918A1 (en) 2003-07-17 2003-07-17 Fabrication of an embossed diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200303832A SG125918A1 (en) 2003-07-17 2003-07-17 Fabrication of an embossed diaphragm

Publications (1)

Publication Number Publication Date
SG125918A1 true SG125918A1 (en) 2006-10-30

Family

ID=38420707

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200303832A SG125918A1 (en) 2003-07-17 2003-07-17 Fabrication of an embossed diaphragm

Country Status (1)

Country Link
SG (1) SG125918A1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129636A (en) * 1995-11-01 1997-05-16 Denso Corp Formation of nitride film on silicon wafer and etching of silicon wafer
JPH09148590A (en) * 1995-11-22 1997-06-06 Matsushita Electric Works Ltd Method for forming diaphragm and manufacture of semiconductor pressure sensor
US5888412A (en) * 1996-03-04 1999-03-30 Motorola, Inc. Method for making a sculptured diaphragm
JP2000031501A (en) * 1998-07-09 2000-01-28 Denso Corp Method of etching silicon wafer
US6261943B1 (en) * 2000-02-08 2001-07-17 Nec Research Institute, Inc. Method for fabricating free-standing thin metal films
GB2367688A (en) * 2000-09-04 2002-04-10 Advantest Corp Method of manufacturing a membrane mask
US6565765B1 (en) * 1999-06-22 2003-05-20 Robert Bosch Gmbh Method for manufacturing a sensor having a membrane

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129636A (en) * 1995-11-01 1997-05-16 Denso Corp Formation of nitride film on silicon wafer and etching of silicon wafer
JPH09148590A (en) * 1995-11-22 1997-06-06 Matsushita Electric Works Ltd Method for forming diaphragm and manufacture of semiconductor pressure sensor
US5888412A (en) * 1996-03-04 1999-03-30 Motorola, Inc. Method for making a sculptured diaphragm
JP2000031501A (en) * 1998-07-09 2000-01-28 Denso Corp Method of etching silicon wafer
US6565765B1 (en) * 1999-06-22 2003-05-20 Robert Bosch Gmbh Method for manufacturing a sensor having a membrane
US6261943B1 (en) * 2000-02-08 2001-07-17 Nec Research Institute, Inc. Method for fabricating free-standing thin metal films
GB2367688A (en) * 2000-09-04 2002-04-10 Advantest Corp Method of manufacturing a membrane mask

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