SG125918A1 - Fabrication of an embossed diaphragm - Google Patents
Fabrication of an embossed diaphragmInfo
- Publication number
- SG125918A1 SG125918A1 SG200303832A SG200303832A SG125918A1 SG 125918 A1 SG125918 A1 SG 125918A1 SG 200303832 A SG200303832 A SG 200303832A SG 200303832 A SG200303832 A SG 200303832A SG 125918 A1 SG125918 A1 SG 125918A1
- Authority
- SG
- Singapore
- Prior art keywords
- fabrication
- embossed
- diaphragm
- embossed diaphragm
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200303832A SG125918A1 (en) | 2003-07-17 | 2003-07-17 | Fabrication of an embossed diaphragm |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200303832A SG125918A1 (en) | 2003-07-17 | 2003-07-17 | Fabrication of an embossed diaphragm |
Publications (1)
Publication Number | Publication Date |
---|---|
SG125918A1 true SG125918A1 (en) | 2006-10-30 |
Family
ID=38420707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200303832A SG125918A1 (en) | 2003-07-17 | 2003-07-17 | Fabrication of an embossed diaphragm |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG125918A1 (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129636A (en) * | 1995-11-01 | 1997-05-16 | Denso Corp | Formation of nitride film on silicon wafer and etching of silicon wafer |
JPH09148590A (en) * | 1995-11-22 | 1997-06-06 | Matsushita Electric Works Ltd | Method for forming diaphragm and manufacture of semiconductor pressure sensor |
US5888412A (en) * | 1996-03-04 | 1999-03-30 | Motorola, Inc. | Method for making a sculptured diaphragm |
JP2000031501A (en) * | 1998-07-09 | 2000-01-28 | Denso Corp | Method of etching silicon wafer |
US6261943B1 (en) * | 2000-02-08 | 2001-07-17 | Nec Research Institute, Inc. | Method for fabricating free-standing thin metal films |
GB2367688A (en) * | 2000-09-04 | 2002-04-10 | Advantest Corp | Method of manufacturing a membrane mask |
US6565765B1 (en) * | 1999-06-22 | 2003-05-20 | Robert Bosch Gmbh | Method for manufacturing a sensor having a membrane |
-
2003
- 2003-07-17 SG SG200303832A patent/SG125918A1/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129636A (en) * | 1995-11-01 | 1997-05-16 | Denso Corp | Formation of nitride film on silicon wafer and etching of silicon wafer |
JPH09148590A (en) * | 1995-11-22 | 1997-06-06 | Matsushita Electric Works Ltd | Method for forming diaphragm and manufacture of semiconductor pressure sensor |
US5888412A (en) * | 1996-03-04 | 1999-03-30 | Motorola, Inc. | Method for making a sculptured diaphragm |
JP2000031501A (en) * | 1998-07-09 | 2000-01-28 | Denso Corp | Method of etching silicon wafer |
US6565765B1 (en) * | 1999-06-22 | 2003-05-20 | Robert Bosch Gmbh | Method for manufacturing a sensor having a membrane |
US6261943B1 (en) * | 2000-02-08 | 2001-07-17 | Nec Research Institute, Inc. | Method for fabricating free-standing thin metal films |
GB2367688A (en) * | 2000-09-04 | 2002-04-10 | Advantest Corp | Method of manufacturing a membrane mask |
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