SG113028A1 - Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method - Google Patents

Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Info

Publication number
SG113028A1
SG113028A1 SG200407785A SG200407785A SG113028A1 SG 113028 A1 SG113028 A1 SG 113028A1 SG 200407785 A SG200407785 A SG 200407785A SG 200407785 A SG200407785 A SG 200407785A SG 113028 A1 SG113028 A1 SG 113028A1
Authority
SG
Singapore
Prior art keywords
lithographic apparatus
optical attenuator
radiation system
apparatus therewith
device manufacturing
Prior art date
Application number
SG200407785A
Other languages
English (en)
Inventor
Cornelis Petrus Andreas Luijkx
Vadim Yevgenyevich Banine
Hako Botma
Duijnhoven Martinus Van
Markus Franciscus Ant Eurlings
Jan Jaap Krikke
Heine Melle Mulder
Johannes Hendrik Ev Muijderman
Duijn Cornelis Jacobus Van
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG113028A1 publication Critical patent/SG113028A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
SG200407785A 2003-12-31 2004-12-28 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method SG113028A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/748,849 US7030958B2 (en) 2003-12-31 2003-12-31 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Publications (1)

Publication Number Publication Date
SG113028A1 true SG113028A1 (en) 2005-07-28

Family

ID=34620639

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407785A SG113028A1 (en) 2003-12-31 2004-12-28 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Country Status (8)

Country Link
US (1) US7030958B2 (fr)
EP (2) EP1975722B1 (fr)
JP (2) JP4309836B2 (fr)
KR (1) KR100695985B1 (fr)
CN (1) CN1641414B (fr)
DE (1) DE602004015713D1 (fr)
SG (1) SG113028A1 (fr)
TW (1) TWI259934B (fr)

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US7369216B2 (en) * 2004-10-15 2008-05-06 Asml Netherlands B.V. Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
US7145634B2 (en) * 2004-12-01 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
US20060139784A1 (en) * 2004-12-28 2006-06-29 Asml Holding N.V. Uniformity correction system having light leak compensation
US7088527B2 (en) * 2004-12-28 2006-08-08 Asml Holding N.V. Uniformity correction system having light leak and shadow compensation
US7265815B2 (en) * 2005-05-19 2007-09-04 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
US7233010B2 (en) * 2005-05-20 2007-06-19 Asml Netherlands B.V. Radiation system and lithographic apparatus
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US7924406B2 (en) * 2005-07-13 2011-04-12 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method having switch device for two illumination channels
US7671970B2 (en) * 2005-07-13 2010-03-02 Asml Netherlands B.V. Stage apparatus with two patterning devices, lithographic apparatus and device manufacturing method skipping an exposure field pitch
US7532308B2 (en) * 2005-09-13 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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DE102006022352B4 (de) * 2006-05-12 2014-11-20 Qimonda Ag Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat
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DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
WO2008092653A2 (fr) * 2007-01-30 2008-08-07 Carl Zeiss Smt Ag Système d'éclairage d'un appareil d'exposition par projection pour microlithographie
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
US8404432B2 (en) * 2007-06-29 2013-03-26 Seagate Technology Llc Lithography process
DE102007041004A1 (de) * 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
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DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
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CN103676483B (zh) * 2012-09-03 2015-09-30 上海微电子装备有限公司 用于光刻曝光中的光强调节装置及光强调节方法
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
US9913357B2 (en) 2013-12-13 2018-03-06 Asml Netherlands B.V. Radiation source, metrology apparatus, lithographic system and device manufacturing method
WO2017144265A1 (fr) 2016-02-25 2017-08-31 Asml Netherlands B.V. Homogénéisateur de faisceau, système d'éclairage et système de métrologie
EP3236282A1 (fr) 2016-04-22 2017-10-25 Hexagon Technology Center GmbH Extension de la dynamique d'un dispositif de mesure a distance comprenant un element d'attenuation optique variable dans le canal de transmission
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RU2754202C1 (ru) * 2020-12-17 2021-08-30 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Многоканальный узел отбора излучения

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Also Published As

Publication number Publication date
EP1555573B1 (fr) 2008-08-13
TW200534032A (en) 2005-10-16
CN1641414B (zh) 2011-01-05
JP2005196180A (ja) 2005-07-21
US20050140957A1 (en) 2005-06-30
TWI259934B (en) 2006-08-11
DE602004015713D1 (de) 2008-09-25
JP4777395B2 (ja) 2011-09-21
JP4309836B2 (ja) 2009-08-05
KR100695985B1 (ko) 2007-03-15
EP1555573A2 (fr) 2005-07-20
KR20050069916A (ko) 2005-07-05
JP2008235941A (ja) 2008-10-02
EP1975722A3 (fr) 2009-02-25
CN1641414A (zh) 2005-07-20
EP1555573A3 (fr) 2005-08-03
EP1975722A2 (fr) 2008-10-01
US7030958B2 (en) 2006-04-18
EP1975722B1 (fr) 2012-10-31

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