SG11202112009UA - A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. - Google Patents

A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.

Info

Publication number
SG11202112009UA
SG11202112009UA SG11202112009UA SG11202112009UA SG11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA
Authority
SG
Singapore
Prior art keywords
substrate
metal film
resist composition
soluble resin
acid generator
Prior art date
Application number
SG11202112009UA
Inventor
Tomotsugu Yano
Masahiko Kubo
Tomohide Katayama
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202112009UA publication Critical patent/SG11202112009UA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/12Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16Halogens
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • C08F212/24Phenols or alcohols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202112009UA 2019-05-20 2020-05-18 A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. SG11202112009UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19175368 2019-05-20
PCT/EP2020/063782 WO2020234222A1 (en) 2019-05-20 2020-05-18 A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.

Publications (1)

Publication Number Publication Date
SG11202112009UA true SG11202112009UA (en) 2021-12-30

Family

ID=66625080

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202112009UA SG11202112009UA (en) 2019-05-20 2020-05-18 A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.

Country Status (8)

Country Link
US (1) US20220252977A1 (en)
EP (1) EP3973357A1 (en)
JP (1) JP2022532852A (en)
KR (1) KR20220011690A (en)
CN (1) CN113874785A (en)
SG (1) SG11202112009UA (en)
TW (1) TW202104292A (en)
WO (1) WO2020234222A1 (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3579946B2 (en) * 1995-02-13 2004-10-20 Jsr株式会社 Chemically amplified radiation-sensitive resin composition
US6416928B1 (en) * 1999-10-06 2002-07-09 Shin-Etsu Chemical Co., Ltd. Onium salts, photoacid generators, resist compositions, and patterning process
KR100869458B1 (en) 2000-02-21 2008-11-19 제온 코포레이션 Resist composition
JP2002244294A (en) * 2001-02-20 2002-08-30 Nippon Zeon Co Ltd Resist composition and resist pattern forming method
JP4645789B2 (en) * 2001-06-18 2011-03-09 Jsr株式会社 Negative radiation sensitive resin composition
US6824954B2 (en) * 2001-08-23 2004-11-30 Jsr Corporation Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same
JP3790960B2 (en) * 2001-10-19 2006-06-28 富士写真フイルム株式会社 Negative resist composition
JP4253486B2 (en) * 2002-09-25 2009-04-15 富士フイルム株式会社 Positive or negative resist composition, acid generator and pattern forming method
JP3710795B2 (en) 2003-05-16 2005-10-26 東京応化工業株式会社 Negative photoresist composition
JP4505357B2 (en) * 2005-03-16 2010-07-21 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
KR101498664B1 (en) 2010-05-04 2015-03-05 주식회사 엘지화학 Negative photoresist composition and patterning method for device
TW201211685A (en) * 2010-06-23 2012-03-16 Jsr Corp Radiation-sensitive composition
JP5578044B2 (en) 2010-11-19 2014-08-27 信越化学工業株式会社 Positive lift-off resist composition and pattern forming method

Also Published As

Publication number Publication date
WO2020234222A1 (en) 2020-11-26
CN113874785A (en) 2021-12-31
TW202104292A (en) 2021-02-01
KR20220011690A (en) 2022-01-28
JP2022532852A (en) 2022-07-20
EP3973357A1 (en) 2022-03-30
US20220252977A1 (en) 2022-08-11

Similar Documents

Publication Publication Date Title
EP3919981A4 (en) Actinic light-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and electronic device manufacturing method
TW200801788A (en) Resist underlayer coating forming composition for mask blank, mask blank and mask
WO2013134104A3 (en) Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
MY190719A (en) Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
TW200616101A (en) Method for manufacturing semiconductor device
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
WO2007041602A8 (en) Lithography verification using guard bands
ES2570737T3 (en) Method to form a metallic design on a substrate
TW200702899A (en) Method for manufacturing gray scale mask and gray scale mask
EA202192148A1 (en) METHOD FOR MANUFACTURING DECORATIVE FOIL AND PANEL CONTAINING SUCH FOIL
MY174577A (en) Photosensitive resin composition and photosensitive resin laminate
EP4129975A4 (en) Actinic-ray-sensitive or radiation-sensitive resin composition, pattern formation method, resist film, and electronic device production method
WO2018163941A9 (en) Method for producing printed material and printing machine
AU2019209831A1 (en) Printed and coated release foil
TW200737484A (en) Method for fabricating identification code on a substrate
TW200606450A (en) Method of manufacturing substrate having recessed portions for microlenses and transmissive screen
JP6173989B2 (en) Pattern formation method
SG11202004975VA (en) A negative tone lift off resist composition comprising an alkali soluble resin and cross linkers and a method for manufacturing metal film patterns on a substrate
SG11202112009UA (en) A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.
TW200736838A (en) Substrate, method for producing the same, and patterning process using the same
US20130022764A1 (en) Housing with patterns and method for forming patterns on the housing
EP4024132A4 (en) Active-light-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, method for manufacturing electronic device, compound, and resin
TW200725180A (en) Negative resist composition, and resist pattern formation method
EP2149817A3 (en) Method of producing mold
EP3757676A4 (en) Photosensitive resin composition, production method therefor, resist film, pattern formation method, and method for producing electronic device