SG11202112009UA - A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. - Google Patents
A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.Info
- Publication number
- SG11202112009UA SG11202112009UA SG11202112009UA SG11202112009UA SG11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA SG 11202112009U A SG11202112009U A SG 11202112009UA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- metal film
- resist composition
- soluble resin
- acid generator
- Prior art date
Links
- 239000002253 acid Substances 0.000 title 1
- 239000003513 alkali Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19175368 | 2019-05-20 | ||
PCT/EP2020/063782 WO2020234222A1 (en) | 2019-05-20 | 2020-05-18 | A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202112009UA true SG11202112009UA (en) | 2021-12-30 |
Family
ID=66625080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202112009UA SG11202112009UA (en) | 2019-05-20 | 2020-05-18 | A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. |
Country Status (8)
Country | Link |
---|---|
US (1) | US20220252977A1 (en) |
EP (1) | EP3973357A1 (en) |
JP (1) | JP2022532852A (en) |
KR (1) | KR20220011690A (en) |
CN (1) | CN113874785A (en) |
SG (1) | SG11202112009UA (en) |
TW (1) | TW202104292A (en) |
WO (1) | WO2020234222A1 (en) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3579946B2 (en) * | 1995-02-13 | 2004-10-20 | Jsr株式会社 | Chemically amplified radiation-sensitive resin composition |
US6416928B1 (en) * | 1999-10-06 | 2002-07-09 | Shin-Etsu Chemical Co., Ltd. | Onium salts, photoacid generators, resist compositions, and patterning process |
KR100869458B1 (en) | 2000-02-21 | 2008-11-19 | 제온 코포레이션 | Resist composition |
JP2002244294A (en) * | 2001-02-20 | 2002-08-30 | Nippon Zeon Co Ltd | Resist composition and resist pattern forming method |
JP4645789B2 (en) * | 2001-06-18 | 2011-03-09 | Jsr株式会社 | Negative radiation sensitive resin composition |
US6824954B2 (en) * | 2001-08-23 | 2004-11-30 | Jsr Corporation | Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same |
JP3790960B2 (en) * | 2001-10-19 | 2006-06-28 | 富士写真フイルム株式会社 | Negative resist composition |
JP4253486B2 (en) * | 2002-09-25 | 2009-04-15 | 富士フイルム株式会社 | Positive or negative resist composition, acid generator and pattern forming method |
JP3710795B2 (en) | 2003-05-16 | 2005-10-26 | 東京応化工業株式会社 | Negative photoresist composition |
JP4505357B2 (en) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition |
KR101498664B1 (en) | 2010-05-04 | 2015-03-05 | 주식회사 엘지화학 | Negative photoresist composition and patterning method for device |
TW201211685A (en) * | 2010-06-23 | 2012-03-16 | Jsr Corp | Radiation-sensitive composition |
JP5578044B2 (en) | 2010-11-19 | 2014-08-27 | 信越化学工業株式会社 | Positive lift-off resist composition and pattern forming method |
-
2020
- 2020-05-18 WO PCT/EP2020/063782 patent/WO2020234222A1/en unknown
- 2020-05-18 KR KR1020217041769A patent/KR20220011690A/en active Search and Examination
- 2020-05-18 EP EP20726806.1A patent/EP3973357A1/en active Pending
- 2020-05-18 US US17/612,058 patent/US20220252977A1/en active Pending
- 2020-05-18 JP JP2021563363A patent/JP2022532852A/en active Pending
- 2020-05-18 SG SG11202112009UA patent/SG11202112009UA/en unknown
- 2020-05-18 CN CN202080037761.8A patent/CN113874785A/en active Pending
- 2020-05-19 TW TW109116488A patent/TW202104292A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2020234222A1 (en) | 2020-11-26 |
CN113874785A (en) | 2021-12-31 |
TW202104292A (en) | 2021-02-01 |
KR20220011690A (en) | 2022-01-28 |
JP2022532852A (en) | 2022-07-20 |
EP3973357A1 (en) | 2022-03-30 |
US20220252977A1 (en) | 2022-08-11 |
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