SG11202110924UA - Method for preparing silicon-carbide-silicon-nitride composite material, and silicon-carbide-silicon-nitride composite material according to same - Google Patents
Method for preparing silicon-carbide-silicon-nitride composite material, and silicon-carbide-silicon-nitride composite material according to sameInfo
- Publication number
- SG11202110924UA SG11202110924UA SG11202110924UA SG11202110924UA SG11202110924UA SG 11202110924U A SG11202110924U A SG 11202110924UA SG 11202110924U A SG11202110924U A SG 11202110924UA SG 11202110924U A SG11202110924U A SG 11202110924UA SG 11202110924U A SG11202110924U A SG 11202110924UA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- carbide
- composite material
- nitride composite
- same
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 2
- 239000002131 composite material Substances 0.000 title 2
Classifications
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/46—Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/614—Gas infiltration of green bodies or pre-forms
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/045—Carbides composed of metals from groups of the periodic table
- H01L2924/0464—14th Group
- H01L2924/04642—SiC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190044654A KR102181727B1 (en) | 2019-04-17 | 2019-04-17 | Manufacturing method of silicon carbide-silicon nitride composite material and silicon carbide-silicon nitride composite material thereby |
PCT/KR2020/003339 WO2020213835A1 (en) | 2019-04-17 | 2020-03-11 | Method for preparing silicon-carbide-silicon-nitride composite material, and silicon-carbide-silicon-nitride composite material according to same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202110924UA true SG11202110924UA (en) | 2021-10-28 |
Family
ID=72837368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202110924UA SG11202110924UA (en) | 2019-04-17 | 2020-03-11 | Method for preparing silicon-carbide-silicon-nitride composite material, and silicon-carbide-silicon-nitride composite material according to same |
Country Status (7)
Country | Link |
---|---|
US (1) | US11697620B2 (en) |
JP (1) | JP7308973B2 (en) |
KR (1) | KR102181727B1 (en) |
CN (1) | CN113748489A (en) |
SG (1) | SG11202110924UA (en) |
TW (1) | TWI744867B (en) |
WO (1) | WO2020213835A1 (en) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
JPH02129365A (en) | 1988-11-07 | 1990-05-17 | Sumitomo Electric Ind Ltd | Coated structural material |
JPH07103460B2 (en) | 1990-05-09 | 1995-11-08 | 信越化学工業株式会社 | Method for producing composite film consisting of SiC and Si (3) N (4) and method for producing mask for X-ray lithography |
JPH07252662A (en) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | High purity composite material and production thereof |
JP2003176178A (en) | 2001-12-07 | 2003-06-24 | Nhk Spring Co Ltd | Wafer support and peripheral part thereof |
US20040043888A1 (en) * | 2002-08-28 | 2004-03-04 | Noritake Co., Limited | Compositions and methods for making microporous ceramic materials |
US7446066B1 (en) * | 2005-11-07 | 2008-11-04 | Jai-Lin Sun | Reverse reaction sintering of Si3N4/SiC composites |
TWI410516B (en) | 2008-09-11 | 2013-10-01 | Lu Sheng Hong | Graphite protective film and manufacturing method thereof |
JP5748564B2 (en) | 2011-05-27 | 2015-07-15 | 東洋炭素株式会社 | Method for producing silicon carbide-carbon composite material |
-
2019
- 2019-04-17 KR KR1020190044654A patent/KR102181727B1/en active IP Right Grant
-
2020
- 2020-03-11 SG SG11202110924UA patent/SG11202110924UA/en unknown
- 2020-03-11 WO PCT/KR2020/003339 patent/WO2020213835A1/en active Application Filing
- 2020-03-11 JP JP2021561698A patent/JP7308973B2/en active Active
- 2020-03-11 CN CN202080021977.5A patent/CN113748489A/en active Pending
- 2020-03-11 US US17/600,400 patent/US11697620B2/en active Active
- 2020-04-17 TW TW109113017A patent/TWI744867B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI744867B (en) | 2021-11-01 |
KR20200121989A (en) | 2020-10-27 |
WO2020213835A1 (en) | 2020-10-22 |
CN113748489A (en) | 2021-12-03 |
TW202102713A (en) | 2021-01-16 |
KR102181727B1 (en) | 2020-11-24 |
JP7308973B2 (en) | 2023-07-14 |
US11697620B2 (en) | 2023-07-11 |
US20220144710A1 (en) | 2022-05-12 |
JP2022520899A (en) | 2022-04-01 |
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