SG11202109726TA - Semiconductor wafer and method of manufacturing semiconductor apparatus - Google Patents
Semiconductor wafer and method of manufacturing semiconductor apparatusInfo
- Publication number
- SG11202109726TA SG11202109726TA SG11202109726TA SG11202109726TA SG 11202109726T A SG11202109726T A SG 11202109726TA SG 11202109726T A SG11202109726T A SG 11202109726TA SG 11202109726T A SG11202109726T A SG 11202109726TA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor
- semiconductor wafer
- manufacturing
- wafer
- manufacturing semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Non-Volatile Memory (AREA)
- Chemical Vapour Deposition (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019052867 | 2019-03-20 | ||
PCT/JP2020/010406 WO2020189421A1 (en) | 2019-03-20 | 2020-03-10 | Semiconductor wafer and method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202109726TA true SG11202109726TA (en) | 2021-10-28 |
Family
ID=72519799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202109726T SG11202109726TA (en) | 2019-03-20 | 2020-03-10 | Semiconductor wafer and method of manufacturing semiconductor apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210407867A1 (en) |
EP (1) | EP3944288A4 (en) |
JP (2) | JP7346548B2 (en) |
KR (1) | KR102637925B1 (en) |
SG (1) | SG11202109726TA (en) |
TW (2) | TWI815242B (en) |
WO (1) | WO2020189421A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021048240A (en) | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | Magnetic memory |
JP7500367B2 (en) | 2020-09-15 | 2024-06-17 | キオクシア株式会社 | Semiconductor wafer and method for manufacturing semiconductor device |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928368A (en) * | 1982-08-09 | 1984-02-15 | Hitachi Ltd | Semiconductor capacitor |
JPH1064776A (en) * | 1996-08-15 | 1998-03-06 | Toshiba Ceramics Co Ltd | Dummy wafer |
JP2000100675A (en) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | Dummy wafer |
US7045435B1 (en) * | 1998-11-03 | 2006-05-16 | Mosel Vitelic Inc | Shallow trench isolation method for a semiconductor wafer |
JP4631152B2 (en) * | 2000-03-16 | 2011-02-16 | 株式会社デンソー | Manufacturing method of semiconductor device using silicon substrate |
CN100349314C (en) | 2002-01-03 | 2007-11-14 | 尼电源***公司 | Porous fuel cell electrode structures having conformal electrically conductive layers thereon |
JP2005340597A (en) * | 2004-05-28 | 2005-12-08 | Toshiba Ceramics Co Ltd | Boat for silicon wafer heat treatment |
JP4957050B2 (en) * | 2005-04-07 | 2012-06-20 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
JP2007214243A (en) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | Manufacturing method for semiconductor device |
JP5582710B2 (en) * | 2009-03-24 | 2014-09-03 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
WO2010114887A1 (en) | 2009-03-31 | 2010-10-07 | Georgia Tech Research Corporation | Metal-assisted chemical etching of substrates |
JP2012035578A (en) * | 2010-08-10 | 2012-02-23 | Sumitomo Electric Ind Ltd | Mold for nanoimprinting |
US20130052826A1 (en) * | 2011-08-30 | 2013-02-28 | Fujifilm Corporation | High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same |
US9608130B2 (en) * | 2011-12-27 | 2017-03-28 | Maxim Integrated Products, Inc. | Semiconductor device having trench capacitor structure integrated therein |
JP5993230B2 (en) * | 2012-07-03 | 2016-09-14 | 株式会社日立ハイテクノロジーズ | Fine structure transfer device and fine structure transfer stamper |
US9466662B2 (en) * | 2012-12-28 | 2016-10-11 | Intel Corporation | Energy storage devices formed with porous silicon |
WO2015012874A1 (en) | 2013-07-25 | 2015-01-29 | The Board Of Trustees Of The Leland Stanford Junior Univeristy | Electro-assisted transfer and fabrication of wire arrays |
JP2017022233A (en) * | 2015-07-09 | 2017-01-26 | 東京エレクトロン株式会社 | Vertical type thermal treatment apparatus and operational method for vertical type thermal treatment apparatus |
JP6211960B2 (en) * | 2014-03-13 | 2017-10-11 | 東京エレクトロン株式会社 | Control device, substrate processing apparatus, and substrate processing system |
KR102152441B1 (en) * | 2014-05-14 | 2020-09-07 | 삼성전자주식회사 | method for depositing thin film using patterned dummy wafer |
JP2016146429A (en) * | 2015-02-09 | 2016-08-12 | トヨタ自動車株式会社 | Semiconductor device manufacturing method |
KR20170034984A (en) * | 2015-09-21 | 2017-03-30 | 삼성전자주식회사 | Dummy wafer, a method of forming thin film and a method of a semiconductor device |
JP6495838B2 (en) * | 2016-01-27 | 2019-04-03 | 東芝メモリ株式会社 | Semiconductor memory device and manufacturing method thereof |
US10032728B2 (en) * | 2016-06-30 | 2018-07-24 | Alpha And Omega Semiconductor Incorporated | Trench MOSFET device and the preparation method thereof |
US10276651B2 (en) * | 2017-09-01 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low warpage high density trench capacitor |
-
2020
- 2020-01-09 TW TW110146097A patent/TWI815242B/en active
- 2020-01-09 TW TW109100702A patent/TWI811513B/en active
- 2020-03-10 EP EP20773287.6A patent/EP3944288A4/en active Pending
- 2020-03-10 KR KR1020217028485A patent/KR102637925B1/en active IP Right Grant
- 2020-03-10 JP JP2021507235A patent/JP7346548B2/en active Active
- 2020-03-10 SG SG11202109726T patent/SG11202109726TA/en unknown
- 2020-03-10 WO PCT/JP2020/010406 patent/WO2020189421A1/en unknown
-
2021
- 2021-09-07 US US17/467,839 patent/US20210407867A1/en active Pending
-
2023
- 2023-04-14 JP JP2023066092A patent/JP2023089164A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN113544815A (en) | 2021-10-22 |
TW202042286A (en) | 2020-11-16 |
US20210407867A1 (en) | 2021-12-30 |
KR20210124397A (en) | 2021-10-14 |
TWI815242B (en) | 2023-09-11 |
EP3944288A1 (en) | 2022-01-26 |
KR102637925B1 (en) | 2024-02-20 |
WO2020189421A1 (en) | 2020-09-24 |
TW202213460A (en) | 2022-04-01 |
JP2023089164A (en) | 2023-06-27 |
EP3944288A4 (en) | 2022-11-16 |
EP3944288A8 (en) | 2022-03-09 |
JP7346548B2 (en) | 2023-09-19 |
JPWO2020189421A1 (en) | 2020-09-24 |
TWI811513B (en) | 2023-08-11 |
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