SG11202105865XA - Semiconductor memory device and method of manufacturing semiconductor memory device - Google Patents

Semiconductor memory device and method of manufacturing semiconductor memory device

Info

Publication number
SG11202105865XA
SG11202105865XA SG11202105865XA SG11202105865XA SG 11202105865X A SG11202105865X A SG 11202105865XA SG 11202105865X A SG11202105865X A SG 11202105865XA SG 11202105865X A SG11202105865X A SG 11202105865XA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
manufacturing
manufacturing semiconductor
semiconductor
Prior art date
Application number
Inventor
Shigeki Kobayashi
Yoshinori Nakakubo
Yasutaka Nonaka
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Publication of SG11202105865XA publication Critical patent/SG11202105865XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG11202105865X 2020-03-09 2020-03-09 Semiconductor memory device and method of manufacturing semiconductor memory device SG11202105865XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/009994 WO2021181455A1 (en) 2020-03-09 2020-03-09 Semiconductor storage device and method for manufacturing semiconductor storage device

Publications (1)

Publication Number Publication Date
SG11202105865XA true SG11202105865XA (en) 2021-10-28

Family

ID=77671256

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105865X SG11202105865XA (en) 2020-03-09 2020-03-09 Semiconductor memory device and method of manufacturing semiconductor memory device

Country Status (4)

Country Link
US (1) US20210313334A1 (en)
CN (1) CN113632230B (en)
SG (1) SG11202105865XA (en)
WO (1) WO2021181455A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118044350A (en) * 2021-12-10 2024-05-14 铠侠股份有限公司 Memory device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0963283A (en) * 1995-08-28 1997-03-07 Sony Corp Nonvolatile memory element of semiconductor and its using method
US6876590B2 (en) * 2002-11-20 2005-04-05 Infineon Technologies, Ag 2T2C signal margin test mode using a defined charge exchange between BL and/BL
JP2005353657A (en) * 2004-06-08 2005-12-22 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
WO2010106922A1 (en) * 2009-03-19 2010-09-23 株式会社 東芝 Semiconductor device and method for manufacturing same
JP2015172990A (en) * 2014-03-12 2015-10-01 株式会社東芝 Nonvolatile semiconductor memory device
US9780104B2 (en) * 2015-09-10 2017-10-03 Toshiba Memory Corporation Semiconductor memory device and method of manufacturing the same
JP2019117679A (en) * 2017-12-27 2019-07-18 東芝メモリ株式会社 Semiconductor memory device
JP2019145191A (en) * 2018-02-23 2019-08-29 東芝メモリ株式会社 Semiconductor memory device and method for controlling semiconductor memory device
JP2019192869A (en) * 2018-04-27 2019-10-31 東芝メモリ株式会社 Semiconductor storage device
JP2020009904A (en) * 2018-07-09 2020-01-16 キオクシア株式会社 Semiconductor memory
JP2020013889A (en) * 2018-07-18 2020-01-23 キオクシア株式会社 Semiconductor storage device

Also Published As

Publication number Publication date
US20210313334A1 (en) 2021-10-07
WO2021181455A1 (en) 2021-09-16
CN113632230B (en) 2024-03-05
CN113632230A (en) 2021-11-09

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