SG11202105857RA - Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth - Google Patents

Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Info

Publication number
SG11202105857RA
SG11202105857RA SG11202105857RA SG11202105857RA SG11202105857RA SG 11202105857R A SG11202105857R A SG 11202105857RA SG 11202105857R A SG11202105857R A SG 11202105857RA SG 11202105857R A SG11202105857R A SG 11202105857RA SG 11202105857R A SG11202105857R A SG 11202105857RA
Authority
SG
Singapore
Prior art keywords
resistivity
high resistivity
slabs
ultra
single crystal
Prior art date
Application number
SG11202105857RA
Inventor
Hyungmin Lee
Jaewoo Ryu
Richard J Phillips
Robert Wendell Standley
Carissima Marie Hudson
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202105857RA publication Critical patent/SG11202105857RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11202105857RA 2018-12-27 2019-12-13 Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth SG11202105857RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862785432P 2018-12-27 2018-12-27
PCT/US2019/066187 WO2020139584A1 (en) 2018-12-27 2019-12-13 Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Publications (1)

Publication Number Publication Date
SG11202105857RA true SG11202105857RA (en) 2021-07-29

Family

ID=69160399

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105857RA SG11202105857RA (en) 2018-12-27 2019-12-13 Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Country Status (8)

Country Link
US (2) US11739437B2 (en)
EP (2) EP3902942B1 (en)
JP (1) JP2022515283A (en)
KR (1) KR20210109540A (en)
CN (1) CN113227464A (en)
SG (1) SG11202105857RA (en)
TW (1) TW202031944A (en)
WO (1) WO2020139584A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113655094B (en) * 2021-08-06 2024-01-19 上海新昇半导体科技有限公司 Method for determining conductivity type of silicon wafer
CN113721076A (en) * 2021-08-09 2021-11-30 上海新昇半导体科技有限公司 Method for measuring resistivity of silicon wafer
CN114454364A (en) * 2021-08-19 2022-05-10 青岛高测科技股份有限公司 Silicon rod cutting method, device and system

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (en) 1983-04-08 1984-10-29 Hitachi Ltd Method and apparatus for production of semiconductor
JPS6395629A (en) 1986-10-13 1988-04-26 Hitachi Ltd Processing instruction device for semiconductor single crystal ingot
US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
JP2001326108A (en) * 2000-05-18 2001-11-22 Mitsubishi Electric Corp Voltage nonlinear resistor and its manufacturing method
JP4463957B2 (en) * 2000-09-20 2010-05-19 信越半導体株式会社 Silicon wafer manufacturing method and silicon wafer
US6743495B2 (en) * 2001-03-30 2004-06-01 Memc Electronic Materials, Inc. Thermal annealing process for producing silicon wafers with improved surface characteristics
JP2004006615A (en) * 2002-04-26 2004-01-08 Sumitomo Mitsubishi Silicon Corp High resistance silicon wafer and its manufacturing method
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US7074271B2 (en) * 2004-02-23 2006-07-11 Sumitomo Mitsubishi Silicon Corporation Method of identifying defect distribution in silicon single crystal ingot
KR101111436B1 (en) * 2004-09-13 2012-02-15 신에쯔 한도타이 가부시키가이샤 Soi wafer manufacturing method and soi wafer
DE102005013831B4 (en) * 2005-03-24 2008-10-16 Siltronic Ag Silicon wafer and method for the thermal treatment of a silicon wafer
JP2008545605A (en) * 2005-05-19 2008-12-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド High resistivity silicon structure and manufacturing method thereof
JP4868880B2 (en) * 2006-02-15 2012-02-01 富士通株式会社 Silicon wafer processing method and wafer processing apparatus
CN101908486B (en) * 2009-06-08 2012-05-23 刘有 Novel process for applying neutron transmutation doping transverse magnetic field czochralski silicon to high-power semiconductor device
JP5767461B2 (en) 2010-12-14 2015-08-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Manufacturing method of semiconductor wafer
CN102181919B (en) * 2011-04-13 2012-12-26 天津市环欧半导体材料技术有限公司 Method for controlling resistivity of head of Czochralski silicon
JP5817542B2 (en) 2012-01-12 2015-11-18 信越半導体株式会社 Silicon substrate manufacturing method
DE102012213793B3 (en) * 2012-08-03 2013-10-24 Solarworld Innovations Gmbh Method for inspecting wire-sawn silicon substrate for solar cell, involves exposing silicon substrate with infrared radiation and detecting infrared radiation transmitted by silicon substrate, where detected infrared radiation is evaluated
FR2997096B1 (en) * 2012-10-23 2014-11-28 Commissariat Energie Atomique PROCESS FOR FORMING A SILICON INGOT OF UNIFORM RESISTIVITY
KR101674819B1 (en) * 2015-08-12 2016-11-09 주식회사 엘지실트론 Method for Growing Single Crystal
FR3045074B1 (en) * 2015-12-14 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR ADJUSTING THE RESISTIVITY OF A SEMICONDUCTOR INGOT DURING ITS MANUFACTURE
WO2017137438A1 (en) * 2016-02-08 2017-08-17 Topsil Globalwafers A/S A phosphorus doped silicon single crystal
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
US10793969B2 (en) 2018-06-27 2020-10-06 Globalwafers Co., Ltd. Sample rod growth and resistivity measurement during single crystal silicon ingot production

Also Published As

Publication number Publication date
US20200208294A1 (en) 2020-07-02
WO2020139584A1 (en) 2020-07-02
TW202031944A (en) 2020-09-01
US20230340690A1 (en) 2023-10-26
EP3902942A1 (en) 2021-11-03
EP4209625A1 (en) 2023-07-12
US11739437B2 (en) 2023-08-29
CN113227464A (en) 2021-08-06
EP3902942B1 (en) 2023-03-22
WO2020139584A8 (en) 2021-06-24
JP2022515283A (en) 2022-02-17
KR20210109540A (en) 2021-09-06

Similar Documents

Publication Publication Date Title
SG11202105857RA (en) Improved resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
GB2599884B (en) Antisense oligomers for treatment of conditions and diseases
SG10202106913TA (en) High resistivity single crystal silicon ingot and wafer having improved mechanical strength
EP3026147A4 (en) Silicon carbide single crystal wafer and method for producing silicon carbide single crystal ingot
EP3634380C0 (en) Inhibition of crystal growth of roflumilast
EP3260582A4 (en) Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot
ZA201904720B (en) Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion
EP3150995A4 (en) Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said method
EP3260581C0 (en) Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer
SG11202109371VA (en) Antisense oligomers for treatment of conditions and diseases
SG11202012909QA (en) Sample rod growth and resistivity measurement during single crystal silicon ingot production
IL289453A (en) Process for the preparation of ridinilazole and crystalline forms thereof
SG11201708416PA (en) Silicon epitaxial wafer and method of producing same
EP3677660C0 (en) Alphaolefin oligomer having uniform structure and method of preparing same
GB201910587D0 (en) Defining parameters for scan of single crystal structure
EP3666935A4 (en) High-purity silicon carbide single crystal substrate and preparation method therefor
EP3650186C0 (en) Method and device for direct crystallisation of polycondensates
IL287091A (en) Process for making drug crystals of desired size distribution and morphology
KR102202447B9 (en) Growth device for silicon carbide single crystal
KR102297750B9 (en) SiC METHOD OF HIGH QUALITY SILICON CARBIDE CRYSTAL GROWTH
PL3755742T3 (en) Casting item and mixture and method of preparing same
IL276669A (en) Composition for prevention and treatment of hair growth disorders
SG11202103988SA (en) Crystal growth apparatus
EP3767015A4 (en) Production method and production device of silicon carbide single crystal
SG11202012612TA (en) Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots