SG11202105783YA - Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant - Google Patents

Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant

Info

Publication number
SG11202105783YA
SG11202105783YA SG11202105783YA SG11202105783YA SG11202105783YA SG 11202105783Y A SG11202105783Y A SG 11202105783YA SG 11202105783Y A SG11202105783Y A SG 11202105783YA SG 11202105783Y A SG11202105783Y A SG 11202105783YA SG 11202105783Y A SG11202105783Y A SG 11202105783YA
Authority
SG
Singapore
Prior art keywords
doping
conduit
partition member
porous partition
solid dopant
Prior art date
Application number
SG11202105783YA
Inventor
Stephan Haringer
Franco Battan
Roberto Scala
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/220,058 external-priority patent/US11028499B2/en
Priority claimed from US16/220,060 external-priority patent/US11028500B2/en
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202105783YA publication Critical patent/SG11202105783YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
SG11202105783YA 2018-12-14 2019-11-12 Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant SG11202105783YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/220,058 US11028499B2 (en) 2018-12-14 2018-12-14 Methods for preparing a doped ingot
US16/220,060 US11028500B2 (en) 2018-12-14 2018-12-14 Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
PCT/US2019/060924 WO2020123074A1 (en) 2018-12-14 2019-11-12 Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant

Publications (1)

Publication Number Publication Date
SG11202105783YA true SG11202105783YA (en) 2021-06-29

Family

ID=69160216

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105783YA SG11202105783YA (en) 2018-12-14 2019-11-12 Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant

Country Status (7)

Country Link
EP (1) EP3894616A1 (en)
JP (1) JP7398460B2 (en)
KR (1) KR102576016B1 (en)
CN (1) CN113166968A (en)
SG (1) SG11202105783YA (en)
TW (1) TWI796531B (en)
WO (1) WO2020123074A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4060097B1 (en) 2021-03-16 2024-05-01 Siltronic AG Device and method of manufacturing a doped silicon monocrystalline rod

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001086033A1 (en) 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing process
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
WO2008133278A1 (en) * 2007-04-24 2008-11-06 Sumco Techxiv Corporation Process for producing silicon single crystal, apparatus therefor and silicon single crystal ingot
JP5302556B2 (en) * 2008-03-11 2013-10-02 Sumco Techxiv株式会社 Silicon single crystal pulling apparatus and silicon single crystal manufacturing method
EP2589687A1 (en) * 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
US20160017513A1 (en) 2013-03-15 2016-01-21 Memc Electronic Materials S.P.A. Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material
KR101680215B1 (en) * 2015-01-07 2016-11-28 주식회사 엘지실트론 Method for manufacturing silicone single crystal ingot and silicone single crystal ingot manufactured by the method
US10443148B2 (en) * 2015-03-10 2019-10-15 Globalwafers Co., Ltd. Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt

Also Published As

Publication number Publication date
EP3894616A1 (en) 2021-10-20
TW202031945A (en) 2020-09-01
KR20210102908A (en) 2021-08-20
JP7398460B2 (en) 2023-12-14
JP2022514528A (en) 2022-02-14
WO2020123074A1 (en) 2020-06-18
KR102576016B1 (en) 2023-09-06
CN113166968A (en) 2021-07-23
TWI796531B (en) 2023-03-21

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