SG11202011401SA - Optoeletronic devices formed over a buffer - Google Patents

Optoeletronic devices formed over a buffer

Info

Publication number
SG11202011401SA
SG11202011401SA SG11202011401SA SG11202011401SA SG11202011401SA SG 11202011401S A SG11202011401S A SG 11202011401SA SG 11202011401S A SG11202011401S A SG 11202011401SA SG 11202011401S A SG11202011401S A SG 11202011401SA SG 11202011401S A SG11202011401S A SG 11202011401SA
Authority
SG
Singapore
Prior art keywords
buffer
formed over
devices formed
optoeletronic
optoeletronic devices
Prior art date
Application number
SG11202011401SA
Inventor
Amy Wing Liu
Dmitri Lubyshev
Joel Fastenau
Scott Nelson
Michael Kattner
Philip Frey
Matthew Fetters
Hubert Krysiak
Zhaoquan Zeng
Aled Morgan
Stuart Edwards
Original Assignee
Iqe Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iqe Plc filed Critical Iqe Plc
Publication of SG11202011401SA publication Critical patent/SG11202011401SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
SG11202011401SA 2018-05-29 2019-05-28 Optoeletronic devices formed over a buffer SG11202011401SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862677563P 2018-05-29 2018-05-29
PCT/US2019/034163 WO2019231906A1 (en) 2018-05-29 2019-05-28 Optoeletronic devices formed over a buffer

Publications (1)

Publication Number Publication Date
SG11202011401SA true SG11202011401SA (en) 2020-12-30

Family

ID=66912970

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011401SA SG11202011401SA (en) 2018-05-29 2019-05-28 Optoeletronic devices formed over a buffer

Country Status (8)

Country Link
US (1) US11069825B2 (en)
EP (1) EP3803986A1 (en)
JP (1) JP2021525961A (en)
CN (1) CN112204756A (en)
CA (1) CA3101187A1 (en)
SG (1) SG11202011401SA (en)
TW (1) TW202005106A (en)
WO (1) WO2019231906A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111540671B (en) * 2020-05-15 2022-11-11 湖南汇思光电科技有限公司 III-V group compound material growth method based on CMOS technology compatible with silicon substrate
CN111947794B (en) * 2020-07-31 2023-01-31 电子科技大学 Preparation method of superconducting nanowire single photon detector

Family Cites Families (21)

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JPS6298614A (en) * 1985-10-24 1987-05-08 Sharp Corp Semiconductor device
EP0544399A3 (en) * 1991-11-26 1993-10-27 Xerox Corp Epitaxial magnesium oxide as a buffer layer for formation of subsequent layers on tetrahedral semiconductors
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
US20020140012A1 (en) * 2001-03-30 2002-10-03 Motorola, Inc. Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same
JP2003347399A (en) * 2002-05-23 2003-12-05 Sharp Corp Method of manufacturing semiconductor substrate
WO2005086868A2 (en) * 2004-03-10 2005-09-22 Science & Technology Corporation @ Unm Metamorphic buffer on small lattice constant substrates
FR2878078B1 (en) * 2004-11-18 2007-01-19 Cit Alcatel BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE TRANSISTOR
US7616231B2 (en) * 2005-01-06 2009-11-10 Goodrich Corporation CMOS active pixel sensor with improved dynamic range and method of operation for object motion detection
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP2010225870A (en) * 2009-03-24 2010-10-07 Toshiba Corp Semiconductor element
WO2011089949A1 (en) * 2010-01-25 2011-07-28 アイアールスペック株式会社 Compound semiconductor light-receiving element array
JP5975417B2 (en) * 2010-12-01 2016-08-23 住友電気工業株式会社 Manufacturing method of light receiving element
US9065000B2 (en) * 2011-03-02 2015-06-23 Gregory Belenky Compound semiconductor device on virtual substrate
JP6062640B2 (en) * 2011-03-18 2017-01-18 キヤノン株式会社 Photoconductive element
US9214581B2 (en) * 2013-02-11 2015-12-15 California Institute Of Technology Barrier infrared detectors on lattice mismatch substrates
JP6153224B2 (en) * 2013-09-20 2017-06-28 国立研究開発法人物質・材料研究機構 GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure perfectness, method for forming the same, and MOS device and infrared detection device using the structure
JP6132746B2 (en) * 2013-11-05 2017-05-24 浜松ホトニクス株式会社 Infrared detector
US9768339B2 (en) * 2015-06-22 2017-09-19 IQE, plc Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs
US9923114B2 (en) * 2015-12-01 2018-03-20 The Boeing Company Infrared detector and method of detecting one or more bands of infrared radiation
US10128350B2 (en) * 2016-09-22 2018-11-13 Iqe Plc Integrated epitaxial metal electrodes
JP6750996B2 (en) * 2016-10-05 2020-09-02 旭化成エレクトロニクス株式会社 Infrared sensor

Also Published As

Publication number Publication date
US11069825B2 (en) 2021-07-20
WO2019231906A1 (en) 2019-12-05
EP3803986A1 (en) 2021-04-14
US20190371947A1 (en) 2019-12-05
CN112204756A (en) 2021-01-08
CA3101187A1 (en) 2019-12-05
TW202005106A (en) 2020-01-16
JP2021525961A (en) 2021-09-27

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