SG11202005615TA - Deposition processing systems having active temperature control and associated methods - Google Patents

Deposition processing systems having active temperature control and associated methods

Info

Publication number
SG11202005615TA
SG11202005615TA SG11202005615TA SG11202005615TA SG11202005615TA SG 11202005615T A SG11202005615T A SG 11202005615TA SG 11202005615T A SG11202005615T A SG 11202005615TA SG 11202005615T A SG11202005615T A SG 11202005615TA SG 11202005615T A SG11202005615T A SG 11202005615TA
Authority
SG
Singapore
Prior art keywords
temperature control
processing systems
associated methods
active temperature
deposition processing
Prior art date
Application number
SG11202005615TA
Inventor
Angus Mcfadden
Jason Wright
Original Assignee
Technetics Group Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technetics Group Llc filed Critical Technetics Group Llc
Publication of SG11202005615TA publication Critical patent/SG11202005615TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
SG11202005615TA 2017-12-20 2018-12-17 Deposition processing systems having active temperature control and associated methods SG11202005615TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762608182P 2017-12-20 2017-12-20
PCT/US2018/066066 WO2019126066A1 (en) 2017-12-20 2018-12-17 Deposition processing systems having active temperature control and associated methods

Publications (1)

Publication Number Publication Date
SG11202005615TA true SG11202005615TA (en) 2020-07-29

Family

ID=66814217

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005615TA SG11202005615TA (en) 2017-12-20 2018-12-17 Deposition processing systems having active temperature control and associated methods

Country Status (9)

Country Link
US (2) US11332821B2 (en)
EP (1) EP3728686A4 (en)
JP (1) JP2021508775A (en)
KR (1) KR20200105847A (en)
CN (1) CN111511959B (en)
IL (1) IL275149A (en)
SG (1) SG11202005615TA (en)
TW (1) TWI795492B (en)
WO (1) WO2019126066A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021015942A (en) * 2019-07-16 2021-02-12 東京エレクトロン株式会社 Apparatus and method for heat treatment of substrate
KR102349212B1 (en) * 2021-04-28 2022-01-07 권순영 Method of forming coating layer with the different composition

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327522A (en) * 1989-06-26 1991-02-05 Hitachi Ltd Method and device for thin film processing to semiconductor substrate and thin film processing device
US5607009A (en) * 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
DE19781631T1 (en) * 1997-01-02 1999-04-01 Cvc Products Inc Thermally conductive chuck for vacuum processing device
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2004079349A (en) * 2002-08-19 2004-03-11 Sony Corp Thin film forming device
JP2005210080A (en) 2003-12-25 2005-08-04 Tokyo Electron Ltd Temperature-control method and temperature-control device
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US20060274474A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Substrate Holder
JP2007016272A (en) * 2005-07-06 2007-01-25 Ge Speciality Materials Japan Kk Protective film covered on substrate, and its manufacturing method
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
JP2007322156A (en) * 2006-05-30 2007-12-13 Fujifilm Corp Radiation image conversion panel and method for manufacturing it
US7972444B2 (en) 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
US9062379B2 (en) * 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
JP5479867B2 (en) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
TW201237994A (en) * 2010-12-20 2012-09-16 Novellus Systems Inc System and apparatus for flowable deposition in semiconductor fabrication
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9543219B2 (en) * 2014-12-02 2017-01-10 Globalfoundries Inc. Void monitoring device for measurement of wafer temperature variations

Also Published As

Publication number Publication date
US11332821B2 (en) 2022-05-17
US20220259721A1 (en) 2022-08-18
IL275149A (en) 2020-07-30
KR20200105847A (en) 2020-09-09
CN111511959A (en) 2020-08-07
EP3728686A1 (en) 2020-10-28
TW201936962A (en) 2019-09-16
EP3728686A4 (en) 2021-09-29
TWI795492B (en) 2023-03-11
WO2019126066A1 (en) 2019-06-27
JP2021508775A (en) 2021-03-11
CN111511959B (en) 2022-11-04
US20190185989A1 (en) 2019-06-20

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