SG11202005432RA - Silicide films through selective deposition - Google Patents

Silicide films through selective deposition

Info

Publication number
SG11202005432RA
SG11202005432RA SG11202005432RA SG11202005432RA SG11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA
Authority
SG
Singapore
Prior art keywords
selective deposition
silicide films
silicide
films
selective
Prior art date
Application number
SG11202005432RA
Inventor
Swaminathan Srinivasan
Abhijit Mallick
Nicolas Breil
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202005432RA publication Critical patent/SG11202005432RA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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SG11202005432RA 2017-12-17 2018-12-14 Silicide films through selective deposition SG11202005432RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762599711P 2017-12-17 2017-12-17
PCT/US2018/065686 WO2019118845A1 (en) 2017-12-17 2018-12-14 Silicide films through selective deposition

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SG11202005432RA true SG11202005432RA (en) 2020-07-29

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11202005432RA (en) * 2017-12-17 2020-07-29 Applied Materials Inc Silicide films through selective deposition
US20230108732A1 (en) * 2020-02-04 2023-04-06 Merck Patent Gmbh Methods Of Selectively Forming Metal-Containing Films
WO2022098517A1 (en) * 2020-11-03 2022-05-12 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
US20220344162A1 (en) * 2021-04-23 2022-10-27 Tokyo Electron Limited Method of forming a finfet structure
WO2023096270A1 (en) * 2021-11-26 2023-06-01 솔브레인 주식회사 Masking agent for high dielectric constant thin film, selected area deposition method using same, and semiconductor substrate and semiconductor device manufactured thereby
WO2023249418A1 (en) * 2022-06-21 2023-12-28 성균관대학교산학협력단 Polymer thin film, diffusion barrier film using same, and method for manufacturing same

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2901616B2 (en) 1988-06-27 1999-06-07 ソニー株式会社 Method for manufacturing semiconductor device
US4957777A (en) * 1988-07-28 1990-09-18 Massachusetts Institute Of Technology Very low pressure chemical vapor deposition process for deposition of titanium silicide films
JPH0430422A (en) 1990-05-25 1992-02-03 Fujitsu Ltd Semiconductor device and manufacture thereof
US5138432A (en) * 1990-08-30 1992-08-11 Cornell Research Foundation, Inc. Selective deposition of tungsten on TiSi2
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US5633036A (en) * 1995-04-21 1997-05-27 The Board Of Trustees Of The University Of Illinois Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions
US6518168B1 (en) * 1995-08-18 2003-02-11 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
FR2742924B1 (en) * 1995-12-22 1998-03-20 Jorge Luis Regolini METHOD FOR THE SELECTIVE DEPOSITION OF A REFRACTORY METAL SILICIDE ON SILICON AND METALLIC SILICON WAFER BY THIS PROCESS
US5883010A (en) * 1997-08-07 1999-03-16 National Semiconductor Corporation Method for protecting nonsilicided surfaces from silicide formation using spacer oxide mask
US7858518B2 (en) * 1998-04-07 2010-12-28 Micron Technology, Inc. Method for forming a selective contact and local interconnect in situ
US6019839A (en) * 1998-04-17 2000-02-01 Applied Materials, Inc. Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
JP4644359B2 (en) * 2000-11-30 2011-03-02 ルネサスエレクトロニクス株式会社 Deposition method
US7232756B2 (en) * 2003-04-16 2007-06-19 Samsung Electronics Co., Ltd. Nickel salicide process with reduced dopant deactivation
JP4651955B2 (en) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 Deposition method
US7448395B2 (en) * 2004-07-19 2008-11-11 Texas Instruments Incorporated Process method to facilitate silicidation
US9202758B1 (en) * 2005-04-19 2015-12-01 Globalfoundries Inc. Method for manufacturing a contact for a semiconductor component and related structure
US20070098902A1 (en) 2005-06-17 2007-05-03 Cornell Research Foundation, Inc. Fabricating inorganic-on-organic interfaces for molecular electronics employing a titanium coordination complex and thiophene self-assembled monolayers
JP2007088372A (en) 2005-09-26 2007-04-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
US20080032064A1 (en) * 2006-07-10 2008-02-07 President And Fellows Of Harvard College Selective sealing of porous dielectric materials
KR100814417B1 (en) * 2006-10-02 2008-03-18 삼성전자주식회사 Method of forming a silicon pattern having a single crystal and method of forming a non-volatile memory device using the same
JP2008177319A (en) 2007-01-18 2008-07-31 Sony Corp Semiconductor device manufacturing method and semiconductor device
US8236693B2 (en) * 2007-05-15 2012-08-07 Advanced Micro Devices, Inc. Methods of forming silicides of different thicknesses on different structures
US20110001169A1 (en) * 2009-07-01 2011-01-06 International Business Machines Corporation Forming uniform silicide on 3d structures
KR101895398B1 (en) * 2011-04-28 2018-10-25 삼성전자 주식회사 Method of forming an oxide layer and a method of fabricating a semiconductor device comprising the same
US8872252B2 (en) * 2011-08-03 2014-10-28 Micron Technology, Inc. Multi-tiered semiconductor apparatuses including residual silicide in semiconductor tier
US9112003B2 (en) * 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
JP2013149829A (en) * 2012-01-20 2013-08-01 Toshiba Corp Semiconductor device manufacturing method
US8659032B2 (en) * 2012-01-31 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
CN103311247B (en) * 2012-03-14 2016-07-13 中国科学院微电子研究所 Semiconductor device and manufacture method thereof
US9691985B2 (en) 2012-10-04 2017-06-27 Merck Patent Gmbh Passivation layers for organic electronic devices including polycycloolefinic polymers allowing for a flexible material design
US9029208B2 (en) 2012-11-30 2015-05-12 International Business Machines Corporation Semiconductor device with replacement metal gate and method for selective deposition of material for replacement metal gate
US9230807B2 (en) * 2012-12-18 2016-01-05 General Electric Company Systems and methods for ohmic contacts in silicon carbide devices
US20150270134A1 (en) * 2014-03-19 2015-09-24 Qualcomm Incorporated Methods of forming a metal-insulator-semiconductor (mis) structure and a dual contact device
JP6343481B2 (en) * 2014-04-21 2018-06-13 株式会社Adeka Thin film forming raw material, thin film manufacturing method and alcohol compound
US9406554B2 (en) * 2014-09-30 2016-08-02 International Business Machines Corporation Diffusion barrier layer formation
US20160104673A1 (en) 2014-10-09 2016-04-14 United Microelectronics Corp. Fin-shaped field-effect transistor with a germanium epitaxial cap and a method for fabricating the same
US9324820B1 (en) * 2014-10-28 2016-04-26 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor structure with metallic layer over source/drain structure
US10103057B2 (en) * 2014-11-11 2018-10-16 The Board Of Trustees Of The University Of Illinois Use of an inhibitor molecule in chemical vapor deposition to afford deposition of copper on a metal substrate with no deposition on adjacent SIO2 substrate
KR102309334B1 (en) * 2014-12-19 2021-10-07 인텔 코포레이션 Selective deposition utilizing sacrificial blocking layers for semiconductor devices
KR102185458B1 (en) * 2015-02-03 2020-12-03 에이에스엠 아이피 홀딩 비.브이. Selective deposition
US9899268B2 (en) * 2015-03-11 2018-02-20 Globalfoundries Inc. Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device
CN113936994A (en) * 2015-05-01 2022-01-14 应用材料公司 Selective deposition of thin film dielectrics using surface termination chemistry
FR3040533B1 (en) * 2015-08-31 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives FORMING OHMIC CONTACTS FOR A DEVICE HAVING A III-V MATERIAL REGION AND A REGION IN ANOTHER SEMICONDUCTOR MATERIAL
WO2017052905A1 (en) * 2015-09-22 2017-03-30 Applied Materials, Inc. Apparatus and method for selective deposition
US9607842B1 (en) * 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
EP3171409B1 (en) * 2015-11-18 2020-12-30 IMEC vzw Method for forming a field effect transistor device having an electrical contact
CN106920776B (en) * 2015-12-25 2019-12-03 中芯国际集成电路制造(上海)有限公司 The forming method of fin transistor
US10811262B2 (en) * 2016-01-14 2020-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof
US9882013B2 (en) * 2016-03-31 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017222928A (en) 2016-05-31 2017-12-21 東京エレクトロン株式会社 Selective accumulation by surface treatment
US10014212B2 (en) * 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10141308B2 (en) * 2017-03-10 2018-11-27 International Business Machines Corporation Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices
US10157740B1 (en) * 2017-06-15 2018-12-18 Applied Materials, Inc. Selective deposition process utilizing polymer structure deactivation process
US10867866B2 (en) * 2017-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
SG11202005432RA (en) * 2017-12-17 2020-07-29 Applied Materials Inc Silicide films through selective deposition

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