SG11201903365SA - Elastic wave device with sub-wavelength thick piezoelectric layer - Google Patents

Elastic wave device with sub-wavelength thick piezoelectric layer

Info

Publication number
SG11201903365SA
SG11201903365SA SG11201903365SA SG11201903365SA SG11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA
Authority
SG
Singapore
Prior art keywords
elastic wave
international
layer
osaka
sub
Prior art date
Application number
SG11201903365SA
Inventor
Rei Goto
Jie Zou
Hiroyuki Nakamura
Chun Lam
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201903365SA publication Critical patent/SG11201903365SA/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111110111101110101011111011111011111101111111011011110101111111011110111111 Organization (10) International Publication Number International Bureau (43) International Publication Date .....0\"\"\" WO 2018/075682 Al 26 April 2018 (26.04.2018) WIP0 I PCT _ (51) (21) (22) (25) Filing Language: (26) (30) (71) Applicant: SKYWORKS SOLUTIONS, INC. [US/US]; (72) International Patent Classification: (JP). LAM, Chun, Sing; 20 Sylvan Road, Woburn, MA H01L 41/107 (2006.01) HO1L 41/083 (2006.01) 01801 (US). HOlL 41/187 (2006.01) HO1L 41/047 (2006.01) (74) Agent: JUANG, Agnes; Knobbe Martens, 2040 Main International Application Number: Street, 14th Floor, Irvine, CA 92614 (US). PCT/US2017/057256 (81) Designated States (unless otherwise indicated, for every International Filing Date: kind of national protection available): AE, AG, AL, AM, 18 October 2017 (18.10.2017) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, English DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, Publication Language: English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, Priority Data: KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, 62/410,804 20 October 2016 (20.10.2016) US MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, 62/423,705 17 November 2016 (17.11.2016) US OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. 20 Sylvan Road, Woburn, MA 01801 (US). (84) Designated States (unless otherwise indicated, for every Inventors: GOTO, Rei; 1006, Oaza Kadoma Kadoma-shi, kind of regional protection available): ARIPO (BW, GH, Osaka-fu, Osaka, 571 0050 (JP). ZOE, Jie; 20 Sylvan Road, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, Woburn, MA 01801 (US). NAKAMURA, Hiroyuki; 1006, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, Oaza Kadama Kadoma-shi, Osaka-fu, Osaka, 571 0050 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = _ _ = Title: ELASTIC WAVE DEVICE 10- \ 1 / 4 : Aspects of this disclosure layer, an interdigital transducer electrode on the piezoelectric layer, and a high velocity the velocity of an elastic wave. The high velocity layer can inhibit an elastic wave from -resonance. piezoelectric WITH SUB-WAVELENGTH THICK PIEZOELECTRIC 14 . is u 1 h l LAYER = (54) = = = \ maa — ma 60 asea Rsaa seaa mar man- , device leaking H includes a sub-wavelength thick layer with a higher bulk velocity from the piezoelectric layer at = = 16 = = = 1-1 co ei kin IN © -- -- GO (57) 0 than N anti F1.1 relate to an elastic wave device. The elastic wave C [Continued on next page] WO 2018/075682 Al MIDEDIMOMOIDEIREIDIONONIMEIHIMEMOIMIE TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) — as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))
SG11201903365SA 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer SG11201903365SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662410804P 2016-10-20 2016-10-20
US201662423705P 2016-11-17 2016-11-17
PCT/US2017/057256 WO2018075682A1 (en) 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer

Publications (1)

Publication Number Publication Date
SG11201903365SA true SG11201903365SA (en) 2019-05-30

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Country Status (9)

Country Link
US (3) US20180159494A1 (en)
JP (1) JP2018074575A (en)
KR (1) KR20190058680A (en)
CN (1) CN109891612A (en)
DE (1) DE112017005316B4 (en)
GB (2) GB2569082A (en)
SG (1) SG11201903365SA (en)
TW (1) TWI752102B (en)
WO (1) WO2018075682A1 (en)

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KR102358899B1 (en) * 2017-12-08 2022-02-08 가부시키가이샤 무라타 세이사쿠쇼 seismic device
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US20180159507A1 (en) 2018-06-07
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