SG11201808205QA - Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF - Google Patents

Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF

Info

Publication number
SG11201808205QA
SG11201808205QA SG11201808205QA SG11201808205QA SG11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA
Authority
SG
Singapore
Prior art keywords
alloy sputtering
sputtering target
production method
target
oxygen content
Prior art date
Application number
SG11201808205QA
Inventor
Kunihiro Oda
Takayuki Asano
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201808205QA publication Critical patent/SG11201808205QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D7/00—Casting ingots, e.g. from ferrous metals
    • B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PCTJ P/011696 Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF 5 Provided is a Ti-Nb alloy sputtering target containing 0.1 to 30 at% of Nb, the remainder of Ti and unavoidable impurities; and the Ti-Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content 10 and is readily processable due to the low hardness of the target, the Ti-Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering. 15 21
SG11201808205QA 2016-03-25 2017-03-23 Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF SG11201808205QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016062545 2016-03-25
PCT/JP2017/011696 WO2017164302A1 (en) 2016-03-25 2017-03-23 Ti-Nb ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Publications (1)

Publication Number Publication Date
SG11201808205QA true SG11201808205QA (en) 2018-10-30

Family

ID=59900250

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808205QA SG11201808205QA (en) 2016-03-25 2017-03-23 Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF

Country Status (7)

Country Link
US (1) US11837449B2 (en)
EP (1) EP3418422B1 (en)
JP (1) JP6440866B2 (en)
KR (1) KR102236414B1 (en)
SG (1) SG11201808205QA (en)
TW (1) TWI721139B (en)
WO (1) WO2017164302A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111057905B (en) * 2020-01-13 2022-03-04 西安理工大学 Method for preparing niobium-titanium alloy through powder metallurgy
CN113290178B (en) * 2021-05-21 2022-04-19 东莞市诺德金属科技有限公司 Cogging forging method for high-Nb-content Ti-Nb alloy ingot

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197393A (en) 1975-02-21 1976-08-26 x senshutsuryokuno seigyohoho
JPH01290766A (en) 1988-05-18 1989-11-22 Nippon Mining Co Ltd Ti-containing high-purity ta target and its production
US5224534A (en) * 1990-09-21 1993-07-06 Nippon Mining And Metals Company, Limited Method of producing refractory metal or alloy materials
US5102450A (en) * 1991-08-01 1992-04-07 General Electric Company Method for melting titanium aluminide alloys in ceramic crucible
US6309556B1 (en) * 1998-09-03 2001-10-30 Praxair S.T. Technology, Inc. Method of manufacturing enhanced finish sputtering targets
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6331484B1 (en) 1999-03-29 2001-12-18 Lucent Technologies, Inc. Titanium-tantalum barrier layer film and method for forming the same
JP3445557B2 (en) 1999-05-24 2003-09-08 ルーセント テクノロジーズ インコーポレーテッド Titanium-tantalum barrier layer thin film and method of forming the same
JP2001131737A (en) * 1999-11-09 2001-05-15 Nikko Materials Co Ltd Sputtering target and method of grinding
KR100504062B1 (en) * 2000-04-20 2005-07-27 가부시끼가이샤 도시바 Sputter target, barrier film and electronic component
US20030227068A1 (en) 2001-05-31 2003-12-11 Jianxing Li Sputtering target
AU2001275184A1 (en) 2000-08-15 2002-02-25 Honeywell International, Inc. Sputtering target
JP3898044B2 (en) * 2001-12-03 2007-03-28 株式会社東芝 Sputtering target
JP4923933B2 (en) 2006-10-10 2012-04-25 東京エレクトロン株式会社 Barrier layer forming method and plasma film forming apparatus
JP5696051B2 (en) * 2008-11-03 2015-04-08 トーソー エスエムディー，インク． Method for manufacturing a sputter target
JP2010123586A (en) 2008-11-17 2010-06-03 Nec Electronics Corp Semiconductor device, and method of manufacturing the same
JP5349583B2 (en) 2009-03-27 2013-11-20 Ｊｘ日鉱日石金属株式会社 Ti-Nb-based oxide sintered sputtering target, Ti-Nb-based oxide thin film, and method for producing the same
JP5550328B2 (en) * 2009-12-22 2014-07-16 株式会社東芝 Mo sputtering target and manufacturing method thereof
KR20150002861A (en) 2010-07-16 2015-01-07 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Tantalum-based sintered body sputtering target and process for production thereof
JP5979927B2 (en) 2012-03-19 2016-08-31 シチズンホールディングス株式会社 Golden hard decorative material

Also Published As

Publication number Publication date
WO2017164302A1 (en) 2017-09-28
JP6440866B2 (en) 2018-12-19
KR102236414B1 (en) 2021-04-05
EP3418422B1 (en) 2022-06-22
US11837449B2 (en) 2023-12-05
US20190115196A1 (en) 2019-04-18
KR20180110111A (en) 2018-10-08
TWI721139B (en) 2021-03-11
TW201805461A (en) 2018-02-16
EP3418422A4 (en) 2019-10-30
EP3418422A1 (en) 2018-12-26
JPWO2017164302A1 (en) 2018-03-29

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