SG11201702215RA - Polishing composition, method for manufacturing same, and polishing method - Google Patents
Polishing composition, method for manufacturing same, and polishing methodInfo
- Publication number
- SG11201702215RA SG11201702215RA SG11201702215RA SG11201702215RA SG11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- manufacturing same
- polishing composition
- composition
- manufacturing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014200720A JP2016069535A (en) | 2014-09-30 | 2014-09-30 | Polishing composition and producing method thereof and polishing method |
PCT/JP2015/003754 WO2016051636A1 (en) | 2014-09-30 | 2015-07-27 | Polishing composition, method for manufacturing same, and polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201702215RA true SG11201702215RA (en) | 2017-04-27 |
Family
ID=55629716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201702215RA SG11201702215RA (en) | 2014-09-30 | 2015-07-27 | Polishing composition, method for manufacturing same, and polishing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170292039A1 (en) |
JP (1) | JP2016069535A (en) |
KR (1) | KR20170063598A (en) |
CN (1) | CN106795421A (en) |
SG (1) | SG11201702215RA (en) |
TW (1) | TW201621023A (en) |
WO (1) | WO2016051636A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201908858SA (en) | 2017-03-27 | 2019-10-30 | Hitachi Chemical Co Ltd | Slurry and polishing method |
WO2018179061A1 (en) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
KR102576637B1 (en) | 2018-03-22 | 2023-09-07 | 가부시끼가이샤 레조낙 | Polishing fluid, polishing fluid set and polishing method |
WO2020021680A1 (en) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
JP7073975B2 (en) * | 2018-08-07 | 2022-05-24 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing |
JP7120846B2 (en) * | 2018-08-10 | 2022-08-17 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing same, method for polishing, and method for producing substrate |
JP7254603B2 (en) * | 2019-04-22 | 2023-04-10 | 扶桑化学工業株式会社 | Colloidal silica for metal polishing |
JP2021150515A (en) * | 2020-03-19 | 2021-09-27 | 株式会社フジミインコーポレーテッド | Polishing method and method for manufacturing semiconductor substrate |
JP2022052548A (en) * | 2020-09-23 | 2022-04-04 | 株式会社フジミインコーポレーテッド | Polishing composition |
CN112680186A (en) * | 2021-01-04 | 2021-04-20 | 上海晖研材料科技有限公司 | Surface-modified silicon dioxide and preparation method of abrasive composition containing same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06313164A (en) * | 1993-04-28 | 1994-11-08 | Fujimi Inkooporeetetsudo:Kk | Polishing composition |
AU2792797A (en) * | 1997-05-26 | 1998-12-30 | Hitachi Limited | Polishing method and semiconductor device manufacturing method using the same |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US7316976B2 (en) * | 2004-05-19 | 2008-01-08 | Dupont Air Products Nanomaterials Llc | Polishing method to reduce dishing of tungsten on a dielectric |
JP2008135453A (en) * | 2006-11-27 | 2008-06-12 | Fujimi Inc | Polishing composite and polishing method |
JP2013138053A (en) * | 2011-12-28 | 2013-07-11 | Fujimi Inc | Polishing composition |
-
2014
- 2014-09-30 JP JP2014200720A patent/JP2016069535A/en active Pending
-
2015
- 2015-07-27 SG SG11201702215RA patent/SG11201702215RA/en unknown
- 2015-07-27 WO PCT/JP2015/003754 patent/WO2016051636A1/en active Application Filing
- 2015-07-27 CN CN201580053309.XA patent/CN106795421A/en active Pending
- 2015-07-27 US US15/514,172 patent/US20170292039A1/en not_active Abandoned
- 2015-07-27 KR KR1020177007810A patent/KR20170063598A/en unknown
- 2015-08-28 TW TW104128397A patent/TW201621023A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201621023A (en) | 2016-06-16 |
WO2016051636A1 (en) | 2016-04-07 |
CN106795421A (en) | 2017-05-31 |
US20170292039A1 (en) | 2017-10-12 |
KR20170063598A (en) | 2017-06-08 |
JP2016069535A (en) | 2016-05-09 |
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