SG11201700606YA - Structure for radio-frequency applications - Google Patents
Structure for radio-frequency applicationsInfo
- Publication number
- SG11201700606YA SG11201700606YA SG11201700606YA SG11201700606YA SG11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA
- Authority
- SG
- Singapore
- Prior art keywords
- radio
- frequency applications
- applications
- frequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Micromachines (AREA)
- Transceivers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1401800A FR3024587B1 (en) | 2014-08-01 | 2014-08-01 | METHOD FOR MANUFACTURING HIGHLY RESISTIVE STRUCTURE |
PCT/FR2015/051854 WO2016016532A1 (en) | 2014-08-01 | 2015-07-03 | Structure for radio-frequency applications |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201700606YA true SG11201700606YA (en) | 2017-02-27 |
Family
ID=52102706
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900450PA SG10201900450PA (en) | 2014-08-01 | 2015-07-03 | Structure for radio-frequency applications |
SG11201700606YA SG11201700606YA (en) | 2014-08-01 | 2015-07-03 | Structure for radio-frequency applications |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900450PA SG10201900450PA (en) | 2014-08-01 | 2015-07-03 | Structure for radio-frequency applications |
Country Status (8)
Country | Link |
---|---|
US (2) | US10347597B2 (en) |
EP (1) | EP3175477B1 (en) |
JP (1) | JP6643316B2 (en) |
KR (1) | KR102403499B1 (en) |
CN (1) | CN106575637B (en) |
FR (1) | FR3024587B1 (en) |
SG (2) | SG10201900450PA (en) |
WO (1) | WO2016016532A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107275197A (en) * | 2016-04-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
CN110352484B (en) * | 2016-12-05 | 2022-12-06 | 环球晶圆股份有限公司 | High resistivity silicon-on-insulator structure and method of making same |
FR3062238A1 (en) * | 2017-01-26 | 2018-07-27 | Soitec | SUPPORT FOR A SEMICONDUCTOR STRUCTURE |
FR3062517B1 (en) | 2017-02-02 | 2019-03-15 | Soitec | STRUCTURE FOR RADIO FREQUENCY APPLICATION |
FR3063854B1 (en) * | 2017-03-13 | 2021-08-27 | Commissariat Energie Atomique | SAW RESONATOR WITH PARASITE WAVE ATTENUATION LAYERS |
US10784348B2 (en) | 2017-03-23 | 2020-09-22 | Qualcomm Incorporated | Porous semiconductor handle substrate |
US10134837B1 (en) * | 2017-06-30 | 2018-11-20 | Qualcomm Incorporated | Porous silicon post processing |
US10224396B1 (en) * | 2017-11-20 | 2019-03-05 | Globalfoundries Inc. | Deep trench isolation structures |
WO2019111893A1 (en) * | 2017-12-06 | 2019-06-13 | 株式会社村田製作所 | Acoustic wave device |
FR3079661A1 (en) | 2018-03-29 | 2019-10-04 | Soitec | METHOD FOR MANUFACTURING SUBSTRATE FOR RADIO FREQUENCY FILTER |
FR3079662B1 (en) * | 2018-03-30 | 2020-02-28 | Soitec | SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF |
KR102652250B1 (en) * | 2018-07-05 | 2024-03-28 | 소이텍 | Substrate for integrated radio frequency device and method for manufacturing same |
US10658474B2 (en) * | 2018-08-14 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming thin semiconductor-on-insulator (SOI) substrates |
DE102018131946A1 (en) | 2018-12-12 | 2020-06-18 | RF360 Europe GmbH | Thin film SAW device |
FR3098342B1 (en) | 2019-07-02 | 2021-06-04 | Soitec Silicon On Insulator | semiconductor structure comprising a buried porous layer, for RF applications |
JP2022541172A (en) * | 2019-07-19 | 2022-09-22 | アイキューイー ピーエルシー | Semiconductor material with tunable dielectric constant and tunable thermal conductivity |
JP2022548348A (en) * | 2019-09-18 | 2022-11-18 | フレクエンシス | Transducer structure for acoustic wave devices |
FR3105574B1 (en) * | 2019-12-19 | 2023-01-13 | Commissariat Energie Atomique | Semiconductor-on-insulator type multilayer stack, associated production process, and radiofrequency module comprising it |
US11469137B2 (en) * | 2019-12-17 | 2022-10-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer |
CN113540339B (en) * | 2020-04-21 | 2024-07-12 | 济南晶正电子科技有限公司 | Method for preparing piezoelectric composite film and piezoelectric composite film |
CN113629182A (en) * | 2020-05-08 | 2021-11-09 | 济南晶正电子科技有限公司 | TC-SAW composite substrate and preparation method thereof |
US20220140812A1 (en) * | 2020-10-30 | 2022-05-05 | RF360 Europe GmbH | Multi mirror stack |
GB2625281A (en) * | 2022-12-12 | 2024-06-19 | Iqe Plc | Systems and methods for porous wall coatings |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2994837B2 (en) | 1992-01-31 | 1999-12-27 | キヤノン株式会社 | Semiconductor substrate flattening method, semiconductor substrate manufacturing method, and semiconductor substrate |
JP4623451B2 (en) | 1997-07-30 | 2011-02-02 | 忠弘 大見 | Semiconductor substrate and manufacturing method thereof |
EP0895282A3 (en) * | 1997-07-30 | 2000-01-26 | Canon Kabushiki Kaisha | Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same |
EP0969522A1 (en) | 1998-07-03 | 2000-01-05 | Interuniversitair Microelektronica Centrum Vzw | A thin-film opto-electronic device and a method of making it |
US6180497B1 (en) * | 1998-07-23 | 2001-01-30 | Canon Kabushiki Kaisha | Method for producing semiconductor base members |
JP2004014841A (en) * | 2002-06-07 | 2004-01-15 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
US20040152276A1 (en) | 2003-01-14 | 2004-08-05 | Naoki Nishimura | Device, and substrate on which circuit and antenna are formed |
JP4434592B2 (en) * | 2003-01-14 | 2010-03-17 | キヤノン株式会社 | device |
US20070032040A1 (en) | 2003-09-26 | 2007-02-08 | Dimitri Lederer | Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses |
TWI243496B (en) * | 2003-12-15 | 2005-11-11 | Canon Kk | Piezoelectric film element, method of manufacturing the same, and liquid discharge head |
JP2005340327A (en) * | 2004-05-25 | 2005-12-08 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
JP2006229282A (en) | 2005-02-15 | 2006-08-31 | Kyocera Corp | Thin film bulk acoustic wave resonator, filter, and communication apparatus |
US7410883B2 (en) * | 2005-04-13 | 2008-08-12 | Corning Incorporated | Glass-based semiconductor on insulator structures and methods of making same |
FR2967812B1 (en) | 2010-11-19 | 2016-06-10 | S O I Tec Silicon On Insulator Tech | ELECTRONIC DEVICE FOR RADIOFREQUENCY OR POWER APPLICATIONS AND METHOD OF MANUFACTURING SUCH A DEVICE |
US8481405B2 (en) * | 2010-12-24 | 2013-07-09 | Io Semiconductor, Inc. | Trap rich layer with through-silicon-vias in semiconductor devices |
JP5673170B2 (en) | 2011-02-09 | 2015-02-18 | 信越半導体株式会社 | Bonded substrate, method for manufacturing bonded substrate, semiconductor device, and method for manufacturing semiconductor device |
FR2977075A1 (en) * | 2011-06-23 | 2012-12-28 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE |
FR2977070A1 (en) | 2011-06-23 | 2012-12-28 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE COMPRISING POROUS SILICON, AND SEMICONDUCTOR SUBSTRATE |
US20140212982A1 (en) * | 2013-01-29 | 2014-07-31 | University Of Saskatchewan | Methods of selectively detecting the presence of a compound in a gaseous medium |
-
2014
- 2014-08-01 FR FR1401800A patent/FR3024587B1/en active Active
-
2015
- 2015-07-03 US US15/500,721 patent/US10347597B2/en not_active Ceased
- 2015-07-03 SG SG10201900450PA patent/SG10201900450PA/en unknown
- 2015-07-03 US US16/920,274 patent/USRE49365E1/en active Active
- 2015-07-03 CN CN201580041382.5A patent/CN106575637B/en active Active
- 2015-07-03 JP JP2017505533A patent/JP6643316B2/en active Active
- 2015-07-03 EP EP15742368.2A patent/EP3175477B1/en active Active
- 2015-07-03 WO PCT/FR2015/051854 patent/WO2016016532A1/en active Application Filing
- 2015-07-03 KR KR1020177002895A patent/KR102403499B1/en active IP Right Grant
- 2015-07-03 SG SG11201700606YA patent/SG11201700606YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR3024587A1 (en) | 2016-02-05 |
EP3175477A1 (en) | 2017-06-07 |
KR20170038819A (en) | 2017-04-07 |
WO2016016532A1 (en) | 2016-02-04 |
USRE49365E1 (en) | 2023-01-10 |
US20170221839A1 (en) | 2017-08-03 |
US10347597B2 (en) | 2019-07-09 |
EP3175477B1 (en) | 2021-02-24 |
CN106575637A (en) | 2017-04-19 |
KR102403499B1 (en) | 2022-05-31 |
CN106575637B (en) | 2019-11-19 |
JP2017532758A (en) | 2017-11-02 |
JP6643316B2 (en) | 2020-02-12 |
FR3024587B1 (en) | 2018-01-26 |
SG10201900450PA (en) | 2019-02-27 |
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