SG11201608640QA - Showerhead design - Google Patents

Showerhead design

Info

Publication number
SG11201608640QA
SG11201608640QA SG11201608640QA SG11201608640QA SG11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA SG 11201608640Q A SG11201608640Q A SG 11201608640QA
Authority
SG
Singapore
Prior art keywords
showerhead design
showerhead
design
Prior art date
Application number
SG11201608640QA
Inventor
Kartik Shah
Chaitanya A Prasad
Kevin J Bautista
Jeffrey Tobin
Umesh M Kelkar
Lara Hawrylchak
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201608640QA publication Critical patent/SG11201608640QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
SG11201608640QA 2014-05-16 2015-04-20 Showerhead design SG11201608640QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461994584P 2014-05-16 2014-05-16
PCT/US2015/026687 WO2015175163A1 (en) 2014-05-16 2015-04-20 Showerhead design

Publications (1)

Publication Number Publication Date
SG11201608640QA true SG11201608640QA (en) 2016-11-29

Family

ID=54480416

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201810178TA SG10201810178TA (en) 2014-05-16 2015-04-20 Showerhead design
SG11201608640QA SG11201608640QA (en) 2014-05-16 2015-04-20 Showerhead design

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201810178TA SG10201810178TA (en) 2014-05-16 2015-04-20 Showerhead design

Country Status (6)

Country Link
US (2) US10221483B2 (en)
KR (2) KR102386812B1 (en)
CN (2) CN110724938B (en)
SG (2) SG10201810178TA (en)
TW (2) TWI662993B (en)
WO (1) WO2015175163A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201810178TA (en) 2014-05-16 2018-12-28 Applied Materials Inc Showerhead design
US9384949B2 (en) * 2014-08-08 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Gas-flow control method for plasma apparatus
US10253412B2 (en) * 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
KR102477302B1 (en) * 2015-10-05 2022-12-13 주성엔지니어링(주) Substrate treatment apparatus having exhaust gas cracker and exhaust gas treatment method of the same
US10233543B2 (en) 2015-10-09 2019-03-19 Applied Materials, Inc. Showerhead assembly with multiple fluid delivery zones
US10954596B2 (en) * 2016-12-08 2021-03-23 Applied Materials, Inc. Temporal atomic layer deposition process chamber
KR102560283B1 (en) * 2018-01-24 2023-07-26 삼성전자주식회사 Apparatus and method for manufacturing and designing a shower head
JP7082514B2 (en) * 2018-04-04 2022-06-08 株式会社Kelk Fluid heating device
US10943768B2 (en) * 2018-04-20 2021-03-09 Applied Materials, Inc. Modular high-frequency source with integrated gas distribution
KR102576220B1 (en) * 2018-06-22 2023-09-07 삼성디스플레이 주식회사 Thin Film Processing Appartus and Method
KR102204026B1 (en) * 2018-07-06 2021-01-18 주식회사 케이에스엠컴포넌트 Ceramic showerhead and chemical vapor deposition device with the same
JP7044900B2 (en) * 2018-11-14 2022-03-30 株式会社アルバック Vacuum heating device, reflector device
KR102641752B1 (en) * 2018-11-21 2024-03-04 삼성전자주식회사 Gas injection module, substrate processing apparatus and method for manufacturing semiconductor device using the same
US20220136107A1 (en) * 2019-01-31 2022-05-05 Lam Research Corporation Showerhead with configurable gas outlets
CN112922935B (en) * 2019-12-05 2023-06-30 中微半导体设备(上海)股份有限公司 Connection structure and plasma processing apparatus
CN114086155B (en) * 2022-01-18 2022-04-15 北京中科重仪半导体科技有限公司 Gas nozzle
WO2024085913A1 (en) * 2022-10-21 2024-04-25 Applied Materials, Inc. Process chamber with reflector

Family Cites Families (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175135A (en) * 1991-10-03 1993-07-13 Ulvac Japan Ltd Optical cvd apparatus
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3360098B2 (en) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 Shower head structure of processing equipment
DE29517100U1 (en) * 1995-10-17 1997-02-13 Zimmer Johannes Flow dividing and reshaping bodies
TW315493B (en) * 1996-02-28 1997-09-11 Tokyo Electron Co Ltd Heating apparatus and heat treatment apparatus
KR100492258B1 (en) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 Reaction gas ejection head
KR19980045169A (en) * 1996-12-09 1998-09-15 김광호 Shower head of semiconductor manufacturing apparatus and manufacturing method thereof
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
GB9712400D0 (en) * 1997-06-16 1997-08-13 Trikon Equip Ltd Shower head
JPH1154496A (en) * 1997-08-07 1999-02-26 Tokyo Electron Ltd Heat treatment system and gas processing system
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
KR19990065416A (en) * 1998-01-13 1999-08-05 윤종용 Chamber equipment for manufacturing semiconductor device including shower head
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6399484B1 (en) * 1998-10-26 2002-06-04 Tokyo Electron Limited Semiconductor device fabricating method and system for carrying out the same
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) * 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
WO2001075188A2 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
KR100406174B1 (en) * 2000-06-15 2003-11-19 주식회사 하이닉스반도체 Showerhead used chemically enhanced chemical vapor deposition equipment
AU2002221122A1 (en) * 2000-12-12 2002-06-24 Tokyo Electron Limited Thin film forming method and thin film forming device
KR100516844B1 (en) * 2001-01-22 2005-09-26 동경 엘렉트론 주식회사 Device and method for treatment
KR100427996B1 (en) * 2001-07-19 2004-04-28 주식회사 아이피에스 Apparatus and method for depositing thin film on wafer
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP4128383B2 (en) * 2002-03-27 2008-07-30 東京エレクトロン株式会社 Processing apparatus and processing method
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
KR20040058819A (en) * 2002-12-27 2004-07-05 삼성전자주식회사 Shower head with reducing particle outbreak rating for semiconductor manufacturing equipment
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US7449220B2 (en) * 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7622005B2 (en) * 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7572337B2 (en) * 2004-05-26 2009-08-11 Applied Materials, Inc. Blocker plate bypass to distribute gases in a chemical vapor deposition system
KR100634451B1 (en) * 2005-01-10 2006-10-16 삼성전자주식회사 Apparatus for manufacturing semiconductor device
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP4509864B2 (en) * 2005-05-30 2010-07-21 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP4749785B2 (en) * 2005-07-19 2011-08-17 東京エレクトロン株式会社 Gas processing equipment
WO2007016013A2 (en) * 2005-07-27 2007-02-08 Applied Materials, Inc. Unique passivation technique for a cvd blocker plate to prevent particle formation
KR100687010B1 (en) * 2005-12-26 2007-02-26 세메스 주식회사 Apparatus and method for synthesizing carbon nanotube using low temerature
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
KR20070081648A (en) * 2006-02-13 2007-08-17 삼성전자주식회사 Apparatus for fabricating semiconductor device
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
JP5045000B2 (en) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 Film forming apparatus, gas supply apparatus, film forming method, and storage medium
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
KR100849929B1 (en) * 2006-09-16 2008-08-26 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof
US20080081114A1 (en) * 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
JP5036274B2 (en) * 2006-10-30 2012-09-26 大日本スクリーン製造株式会社 Heat treatment apparatus and heat treatment method
JP2008243937A (en) * 2007-03-26 2008-10-09 Tokyo Electron Ltd Equipment and method for treating substrate
US20080236495A1 (en) 2007-03-27 2008-10-02 Structured Materials Inc. Showerhead for chemical vapor deposition (CVD) apparatus
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5008478B2 (en) * 2007-06-27 2012-08-22 東京エレクトロン株式会社 Substrate processing apparatus and shower head
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
JP5192214B2 (en) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 Gas supply apparatus, substrate processing apparatus, and substrate processing method
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US20090211707A1 (en) * 2008-02-22 2009-08-27 Hermes Systems Inc. Apparatus for gas distribution and its applications
US8066895B2 (en) * 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
JP2009224455A (en) * 2008-03-14 2009-10-01 Tokyo Electron Ltd Flat antenna member and plasma processing device with the same
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
US8808456B2 (en) * 2008-08-29 2014-08-19 Tokyo Electron Limited Film deposition apparatus and substrate process apparatus
US8207470B2 (en) * 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
US9714465B2 (en) * 2008-12-01 2017-07-25 Applied Materials, Inc. Gas distribution blocker apparatus
US20110048325A1 (en) * 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
KR101064210B1 (en) * 2009-06-01 2011-09-14 한국생산기술연구원 A showerhead for film depositing vacuum equipments
KR101110080B1 (en) * 2009-07-08 2012-03-13 주식회사 유진테크 Method for processing substrate
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US9112088B2 (en) * 2010-04-22 2015-08-18 Kyocera Corporation Method for manufacturing a thin-film solar cell using a plasma between parallel electrodes
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP5697389B2 (en) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 Electrode plate for plasma etching and plasma etching processing apparatus
WO2012122054A2 (en) * 2011-03-04 2012-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
TWI534291B (en) * 2011-03-18 2016-05-21 應用材料股份有限公司 Showerhead assembly
DE102011056589A1 (en) * 2011-07-12 2013-01-17 Aixtron Se Gas inlet member of a CVD reactor
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
JP6007143B2 (en) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 Shower head, plasma processing apparatus, and plasma processing method
TWI615503B (en) * 2013-11-26 2018-02-21 應用材料股份有限公司 Apparatus for reducing the effect of contamination on a rapid thermal process
JP6542245B2 (en) * 2014-02-14 2019-07-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Upper dome with injection assembly
SG10201810178TA (en) * 2014-05-16 2018-12-28 Applied Materials Inc Showerhead design
US20150348755A1 (en) * 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
KR20170055506A (en) * 2014-09-08 2017-05-19 어플라이드 머티어리얼스, 인코포레이티드 Honeycomb multi-zone gas distribution plate
US9758868B1 (en) * 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure

Also Published As

Publication number Publication date
SG10201810178TA (en) 2018-12-28
KR20170005072A (en) 2017-01-11
TW201600174A (en) 2016-01-01
KR102386812B1 (en) 2022-04-15
CN110724938B (en) 2022-02-22
TW201936266A (en) 2019-09-16
US10626500B2 (en) 2020-04-21
CN106463344A (en) 2017-02-22
US20150329966A1 (en) 2015-11-19
TWI662993B (en) 2019-06-21
CN110724938A (en) 2020-01-24
US20190194810A1 (en) 2019-06-27
WO2015175163A1 (en) 2015-11-19
KR102451499B1 (en) 2022-10-06
US10221483B2 (en) 2019-03-05
KR20220048058A (en) 2022-04-19
CN106463344B (en) 2019-10-11
TWI693100B (en) 2020-05-11

Similar Documents

Publication Publication Date Title
DK3237446T3 (en) Anti-PD-1-antistoffer
DK3236972T3 (en) Antivirale N4-hydroxycytidin-derivativer
DK3373003T3 (en) Urinteststrimmel
AU359947S (en) Shower
AU361515S (en) Dishrack
SG11201608640QA (en) Showerhead design
AU362944S (en) Lapboard
DK3191586T3 (en) Cellobiosephosphorylase
DK3178931T3 (en) Anti-orai1-antistof
DK3002465T3 (en) Hydrauliksystem
GB201401268D0 (en) TrackPack
DK3234061T3 (en) Nano-inhibitorer
DK3194944T3 (en) Tomografiapparat
DK3145380T3 (en) Toiletventilationssystem
AU5598P (en) Lanidaho Mandevilla sanderi
AU5594P (en) Lanoregon Mandevilla sanderi
AU5593P (en) Lanmissouri Mandevilla sanderi
AU5585P (en) Lanutah Mandevilla sanderi
AU5584P (en) Laniowa Mandevilla sanderi
AU5583P (en) Lanminnesota Mandevilla sanderi
AU5597P (en) Lancalifornia Mandevilla sanderi
AU5591P (en) Lanmontana Mandevilla sanderi
AU5596P (en) Lannevada Mandevilla sanderi
AU5287P (en) FLOMANPIW Mandevilla sanderi
AU5289P (en) FLOMANFOP Mandevilla sanderi