SG11201601952RA - Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures - Google Patents
Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structuresInfo
- Publication number
- SG11201601952RA SG11201601952RA SG11201601952RA SG11201601952RA SG11201601952RA SG 11201601952R A SG11201601952R A SG 11201601952RA SG 11201601952R A SG11201601952R A SG 11201601952RA SG 11201601952R A SG11201601952R A SG 11201601952RA SG 11201601952R A SG11201601952R A SG 11201601952RA
- Authority
- SG
- Singapore
- Prior art keywords
- light emitting
- emitting diode
- quantum efficiency
- internal quantum
- contact measurement
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361877949P | 2013-09-14 | 2013-09-14 | |
| US201461933284P | 2014-01-29 | 2014-01-29 | |
| US14/485,468 US9823198B2 (en) | 2013-09-14 | 2014-09-12 | Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures |
| PCT/US2014/055537 WO2015038992A1 (en) | 2013-09-14 | 2014-09-13 | Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201601952RA true SG11201601952RA (en) | 2016-04-28 |
Family
ID=52666359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201601952RA SG11201601952RA (en) | 2013-09-14 | 2014-09-13 | Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9823198B2 (en) |
| CN (1) | CN105829902B (en) |
| SG (1) | SG11201601952RA (en) |
| TW (1) | TWI641851B (en) |
| WO (1) | WO2015038992A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9921261B2 (en) * | 2013-10-17 | 2018-03-20 | Kla-Tencor Corporation | Method and apparatus for non-contact measurement of sheet resistance and shunt resistance of p-n junctions |
| KR101720165B1 (en) * | 2015-09-02 | 2017-04-03 | 한양대학교 에리카산학협력단 | Apparatus and method for analyzing state density of light emitting diode |
| WO2018112267A1 (en) * | 2016-12-16 | 2018-06-21 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
| WO2018236767A2 (en) * | 2017-06-20 | 2018-12-27 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
| CN109765472A (en) * | 2018-12-29 | 2019-05-17 | 江西兆驰半导体有限公司 | A kind of electroluminescent method for measurement of the LED device of indirect electric contact type |
| CN110009102B (en) * | 2019-04-12 | 2023-03-24 | 南京吉相传感成像技术研究院有限公司 | Depth residual error network acceleration method based on photoelectric computing array |
| CN109993283B (en) * | 2019-04-12 | 2023-02-28 | 南京吉相传感成像技术研究院有限公司 | Deep convolution generation type countermeasure network acceleration method based on photoelectric calculation array |
| CN110133542B (en) * | 2019-05-13 | 2021-10-08 | 合肥京东方显示光源有限公司 | Lamp source screening device, system and screening method |
| CN112635340B (en) * | 2019-10-09 | 2023-11-03 | 台湾爱司帝科技股份有限公司 | LED wafer detection device and method |
| CN113985252B (en) * | 2021-10-28 | 2022-07-15 | 江苏博敏电子有限公司 | Lamp panel jig regional testing method |
| CN114705698A (en) * | 2022-06-02 | 2022-07-05 | 季华实验室 | Defect detection method, device, system and storage medium |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1237128B1 (en) | 2001-03-01 | 2012-08-01 | Sicpa Holding Sa | Improved luminescence characteristics detector |
| US6670820B2 (en) | 2001-12-27 | 2003-12-30 | General Electric Company | Method and apparatus for evaluating electroluminescence properties of semiconductor materials and devices |
| US7362088B1 (en) * | 2003-10-15 | 2008-04-22 | Ahbee 1, L.P. | Non contact method and apparatus for measurement of sheet resistance of P-N junctions |
| US7414409B1 (en) * | 2005-08-19 | 2008-08-19 | Vladimir Faifer | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers |
| JP2007088389A (en) * | 2005-09-26 | 2007-04-05 | Yamaguchi Univ | Equipment for measuring internal quantum efficiency of semiconductor light emitting device (led), and method therefor |
| US7679381B2 (en) * | 2006-01-23 | 2010-03-16 | Maxmile Technologies, Llc | Method and apparatus for nondestructively evaluating light-emitting materials |
| WO2009007164A2 (en) | 2007-05-18 | 2009-01-15 | Interuniversitair Microelektronica Centrum Vzw | Junction-photovoltage method and apparatus for contactless determination of sheet resistance and leakage current of semiconductor |
| DE602007004714D1 (en) * | 2007-05-29 | 2010-03-25 | Imec | Mobility measurements of inversion carriers |
| US8299416B2 (en) | 2009-03-01 | 2012-10-30 | Tau Science Corporation | High speed quantum efficiency measurement apparatus utilizing solid state lightsource |
| DE102009039399A1 (en) * | 2009-08-31 | 2011-03-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for measuring a semiconductor structure, which is a solar cell or a precursor of a solar cell |
| US20110301892A1 (en) | 2010-06-03 | 2011-12-08 | Emil Kamieniecki | System and method for characterizing the electrical properties of a semiconductor sample |
| TW201333487A (en) * | 2012-02-08 | 2013-08-16 | Yi-Ping Wang | A surface and photoconductive technique for determination of defect and surface states in semiconductors |
-
2014
- 2014-09-12 US US14/485,468 patent/US9823198B2/en active Active
- 2014-09-13 WO PCT/US2014/055537 patent/WO2015038992A1/en active Application Filing
- 2014-09-13 CN CN201480057422.0A patent/CN105829902B/en active Active
- 2014-09-13 SG SG11201601952RA patent/SG11201601952RA/en unknown
- 2014-09-15 TW TW103131808A patent/TWI641851B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201518746A (en) | 2015-05-16 |
| TWI641851B (en) | 2018-11-21 |
| US20150077741A1 (en) | 2015-03-19 |
| WO2015038992A1 (en) | 2015-03-19 |
| US9823198B2 (en) | 2017-11-21 |
| CN105829902B (en) | 2019-08-06 |
| CN105829902A (en) | 2016-08-03 |
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