SG11201503933RA - Substrate etching method - Google Patents
Substrate etching methodInfo
- Publication number
- SG11201503933RA SG11201503933RA SG11201503933RA SG11201503933RA SG11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA
- Authority
- SG
- Singapore
- Prior art keywords
- etching method
- substrate etching
- substrate
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0112—Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210482401.6A CN103832965B (en) | 2012-11-23 | 2012-11-23 | Substrate etching method |
PCT/CN2013/086420 WO2014079315A1 (en) | 2012-11-23 | 2013-11-01 | Substrate etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201503933RA true SG11201503933RA (en) | 2015-06-29 |
Family
ID=50775520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201503933RA SG11201503933RA (en) | 2012-11-23 | 2013-11-01 | Substrate etching method |
Country Status (7)
Country | Link |
---|---|
US (1) | US9478439B2 (en) |
EP (1) | EP2924000B1 (en) |
KR (1) | KR101735089B1 (en) |
CN (1) | CN103832965B (en) |
SG (1) | SG11201503933RA (en) |
TW (1) | TWI506692B (en) |
WO (1) | WO2014079315A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105261561B (en) * | 2014-07-16 | 2018-05-25 | 北京北方华创微电子装备有限公司 | Black silicon preparation method |
CN106548933B (en) * | 2015-09-23 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Etching process |
US9748389B1 (en) | 2016-03-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for semiconductor device fabrication with improved source drain epitaxy |
CN108364867B (en) * | 2018-02-28 | 2019-04-30 | 清华大学 | Deep silicon etching method |
CN113097062A (en) * | 2021-03-22 | 2021-07-09 | 北京北方华创微电子装备有限公司 | Etching process method and device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5228949A (en) | 1991-11-07 | 1993-07-20 | Chemcut Corporation | Method and apparatus for controlled spray etching |
US6008139A (en) * | 1996-06-17 | 1999-12-28 | Applied Materials Inc. | Method of etching polycide structures |
US6299788B1 (en) * | 1999-03-29 | 2001-10-09 | Mosel Vitelic Inc. | Silicon etching process |
US7115520B2 (en) * | 2003-04-07 | 2006-10-03 | Unaxis Usa, Inc. | Method and apparatus for process control in time division multiplexed (TDM) etch process |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
FR2887073B1 (en) * | 2005-06-14 | 2007-08-10 | Alcatel Sa | METHOD FOR CONTROLLING PRESSURE IN A PROCESS CHAMBER |
CN100554514C (en) * | 2006-11-02 | 2009-10-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of apparatus and method of reaction chamber pressure control |
CN100521102C (en) * | 2006-12-14 | 2009-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for polysilicon etching |
CN101477096B (en) * | 2009-01-05 | 2012-11-21 | 大连理工大学 | Polymer plane nano-channel production method |
WO2011001778A1 (en) * | 2009-07-01 | 2011-01-06 | 住友精密工業株式会社 | Method for manufacturing silicon structure, device for manufacturing same, and program for manufacturing same |
CN101962773B (en) * | 2009-07-24 | 2012-12-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
JP5357710B2 (en) * | 2009-11-16 | 2013-12-04 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, and recording medium recording program |
JP5416280B2 (en) * | 2010-08-19 | 2014-02-12 | 株式会社アルバック | Dry etching method and semiconductor device manufacturing method |
CN102515089B (en) * | 2011-12-21 | 2014-10-15 | 北京大学 | MEMS integration method |
-
2012
- 2012-11-23 CN CN201210482401.6A patent/CN103832965B/en active Active
-
2013
- 2013-10-25 TW TW102138574A patent/TWI506692B/en active
- 2013-11-01 WO PCT/CN2013/086420 patent/WO2014079315A1/en active Application Filing
- 2013-11-01 EP EP13857651.7A patent/EP2924000B1/en active Active
- 2013-11-01 KR KR1020157016574A patent/KR101735089B1/en active IP Right Grant
- 2013-11-01 US US14/646,909 patent/US9478439B2/en active Active
- 2013-11-01 SG SG11201503933RA patent/SG11201503933RA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR101735089B1 (en) | 2017-05-24 |
TW201421578A (en) | 2014-06-01 |
TWI506692B (en) | 2015-11-01 |
EP2924000A1 (en) | 2015-09-30 |
EP2924000B1 (en) | 2020-06-17 |
WO2014079315A1 (en) | 2014-05-30 |
US9478439B2 (en) | 2016-10-25 |
EP2924000A4 (en) | 2016-07-06 |
CN103832965B (en) | 2017-02-08 |
KR20150089044A (en) | 2015-08-04 |
CN103832965A (en) | 2014-06-04 |
US20150311091A1 (en) | 2015-10-29 |
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