SG11201503611SA - Methods for forming narrow vertical pillars and integrated circuit devices having the same - Google Patents

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Info

Publication number
SG11201503611SA
SG11201503611SA SG11201503611SA SG11201503611SA SG11201503611SA SG 11201503611S A SG11201503611S A SG 11201503611SA SG 11201503611S A SG11201503611S A SG 11201503611SA SG 11201503611S A SG11201503611S A SG 11201503611SA SG 11201503611S A SG11201503611S A SG 11201503611SA
Authority
SG
Singapore
Prior art keywords
methods
integrated circuit
same
circuit devices
vertical pillars
Prior art date
Application number
SG11201503611SA
Inventor
Jun Liu
Kunal Parekh
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201503611SA publication Critical patent/SG11201503611SA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
SG11201503611SA 2012-11-21 2013-11-07 Methods for forming narrow vertical pillars and integrated circuit devices having the same SG11201503611SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/683,418 US9627611B2 (en) 2012-11-21 2012-11-21 Methods for forming narrow vertical pillars and integrated circuit devices having the same
PCT/US2013/069009 WO2014081580A1 (en) 2012-11-21 2013-11-07 Methods for forming narrow vertical pillars and integrated circuit devices having the same

Publications (1)

Publication Number Publication Date
SG11201503611SA true SG11201503611SA (en) 2015-06-29

Family

ID=50727067

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503611SA SG11201503611SA (en) 2012-11-21 2013-11-07 Methods for forming narrow vertical pillars and integrated circuit devices having the same

Country Status (7)

Country Link
US (4) US9627611B2 (en)
EP (1) EP2923379A4 (en)
KR (2) KR101776446B1 (en)
CN (1) CN104798201B (en)
SG (1) SG11201503611SA (en)
TW (1) TWI514639B (en)
WO (1) WO2014081580A1 (en)

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US9240548B2 (en) * 2012-05-31 2016-01-19 Micron Technology, Inc. Memory arrays and methods of forming an array of memory cells
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CN105405969B (en) * 2015-10-29 2018-02-06 江苏时代全芯存储科技有限公司 The manufacture method of phase-change memory structure
CN105489757B (en) * 2015-12-04 2018-07-03 江苏时代全芯存储科技有限公司 Phase-change memory structure and its manufacturing method
CN107833967B (en) * 2015-12-04 2020-08-25 江苏时代全芯存储科技股份有限公司 Phase change memory and manufacturing method thereof
CN105405861A (en) * 2015-12-15 2016-03-16 上海新储集成电路有限公司 Preparation method of three-dimensional resistive random access memory
CN105609632B (en) * 2015-12-24 2019-03-05 江苏时代全芯存储科技有限公司 Phase-change memory and its manufacturing method
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US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
KR20220129105A (en) * 2018-11-19 2022-09-22 램 리써치 코포레이션 Molybdenum templates for tungsten
US11970776B2 (en) 2019-01-28 2024-04-30 Lam Research Corporation Atomic layer deposition of metal films
WO2020178973A1 (en) * 2019-03-05 2020-09-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Method for producing semiconductor device, substrate processing apparatus and program
US11239418B2 (en) * 2020-01-06 2022-02-01 International Business Machines Corporation Memory device having a ring heater
CN112234140B (en) * 2020-12-11 2021-03-16 长江先进存储产业创新中心有限责任公司 Phase change memory and manufacturing method and reading method thereof
US11665983B2 (en) 2020-12-11 2023-05-30 International Business Machines Corporation Phase change memory cell with ovonic threshold switch
JP2022120263A (en) * 2021-02-05 2022-08-18 富士電機株式会社 Silicon carbide semiconductor device

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Also Published As

Publication number Publication date
KR101776446B1 (en) 2017-09-07
KR101876695B1 (en) 2018-07-09
US20200350496A1 (en) 2020-11-05
US20190097129A1 (en) 2019-03-28
WO2014081580A1 (en) 2014-05-30
EP2923379A1 (en) 2015-09-30
US9627611B2 (en) 2017-04-18
EP2923379A4 (en) 2016-07-13
CN104798201A (en) 2015-07-22
CN104798201B (en) 2018-01-02
US20140138604A1 (en) 2014-05-22
US10164178B2 (en) 2018-12-25
TW201436320A (en) 2014-09-16
KR20150083104A (en) 2015-07-16
KR20170103993A (en) 2017-09-13
US10971683B2 (en) 2021-04-06
TWI514639B (en) 2015-12-21
US20170256710A1 (en) 2017-09-07
US10756265B2 (en) 2020-08-25

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