SG11201405352PA - Apparatus and method for separating a stacked arrangement - Google Patents

Apparatus and method for separating a stacked arrangement

Info

Publication number
SG11201405352PA
SG11201405352PA SG11201405352PA SG11201405352PA SG11201405352PA SG 11201405352P A SG11201405352P A SG 11201405352PA SG 11201405352P A SG11201405352P A SG 11201405352PA SG 11201405352P A SG11201405352P A SG 11201405352PA SG 11201405352P A SG11201405352P A SG 11201405352PA
Authority
SG
Singapore
Prior art keywords
separating
stacked arrangement
stacked
arrangement
Prior art date
Application number
SG11201405352PA
Inventor
Soon Fatt Yoon
Dawei Xu
Chiew Yong Yeo
Original Assignee
Univ Nanyang Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nanyang Tech filed Critical Univ Nanyang Tech
Publication of SG11201405352PA publication Critical patent/SG11201405352PA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006Delaminating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/16Tension
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1111Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168Gripping and pulling work apart during delaminating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19Delaminating means
    • Y10T156/1978Delaminating bending means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
SG11201405352PA 2012-04-23 2013-04-17 Apparatus and method for separating a stacked arrangement SG11201405352PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261637020P 2012-04-23 2012-04-23
PCT/SG2013/000150 WO2013162468A1 (en) 2012-04-23 2013-04-17 Apparatus and method for separating a stacked arrangement

Publications (1)

Publication Number Publication Date
SG11201405352PA true SG11201405352PA (en) 2014-09-26

Family

ID=49483597

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405352PA SG11201405352PA (en) 2012-04-23 2013-04-17 Apparatus and method for separating a stacked arrangement

Country Status (6)

Country Link
US (1) US9522521B2 (en)
EP (1) EP2842177A4 (en)
KR (1) KR20150001822A (en)
CN (1) CN104247068B (en)
SG (1) SG11201405352PA (en)
WO (1) WO2013162468A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2523209B1 (en) * 2010-04-23 2017-03-08 EV Group GmbH Device and method for releasing a product substrate from a holder substrate
US20170076986A1 (en) * 2015-07-15 2017-03-16 The Regents Of The University Of Michigan Non-destructive epitaxial lift-off of large area iii-v thin-film grown by metal organic chemical vapor deposition and substrate reuse
CN107424944B (en) * 2017-06-28 2022-09-06 紫石能源有限公司 Epitaxial layer stripping device and stripping method
RU2683808C1 (en) * 2018-04-19 2019-04-02 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Device for separation of composite structure from substrate on basis of semiconductor film (options)
DE102019135499B3 (en) * 2019-12-20 2021-04-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Release element, release unit and method for releasing a semiconductor layer from a substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826553A (en) * 1987-06-18 1989-05-02 The United States Of America As Represented By The Secretary Of The Air Force Method for replicating an optical element
US4846931A (en) 1988-03-29 1989-07-11 Bell Communications Research, Inc. Method for lifting-off epitaxial films
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2000084844A (en) * 1998-09-17 2000-03-28 Asahi Glass Co Ltd Plate body separating method and device therefor
JP2004507880A (en) 2000-04-17 2004-03-11 ザ ペン ステイト リサーチ ファンデーション Deposited thin films and their use in application to separation and sacrificial layers
JP2003071860A (en) * 2001-09-06 2003-03-12 Canon Inc Molding apparatus for optical element, molding method using the same and optical element
TWI413152B (en) 2005-03-01 2013-10-21 Semiconductor Energy Lab Manufacturing method of semiconductor device
JP2009206418A (en) * 2008-02-29 2009-09-10 Elpida Memory Inc Nonvolatile memory device and manufacturing method for the same
KR101550480B1 (en) 2008-05-30 2015-09-07 알타 디바이씨즈, 인크. Epitaxial lift off stacks and methods
WO2011024689A1 (en) * 2009-08-31 2011-03-03 旭硝子株式会社 Peeling device
WO2011109560A1 (en) * 2010-03-02 2011-09-09 Alta Devices, Inc. Epitaxial lift off systems and methods
US9490158B2 (en) * 2015-01-08 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Bond chuck, methods of bonding, and tool including bond chuck

Also Published As

Publication number Publication date
EP2842177A4 (en) 2015-11-04
US20150053352A1 (en) 2015-02-26
WO2013162468A1 (en) 2013-10-31
US9522521B2 (en) 2016-12-20
EP2842177A1 (en) 2015-03-04
CN104247068A (en) 2014-12-24
KR20150001822A (en) 2015-01-06
CN104247068B (en) 2017-12-05

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