SG11201405348QA - Sputtering target for magnetic recording medium, and process for producing same - Google Patents
Sputtering target for magnetic recording medium, and process for producing sameInfo
- Publication number
- SG11201405348QA SG11201405348QA SG11201405348QA SG11201405348QA SG11201405348QA SG 11201405348Q A SG11201405348Q A SG 11201405348QA SG 11201405348Q A SG11201405348Q A SG 11201405348QA SG 11201405348Q A SG11201405348Q A SG 11201405348QA SG 11201405348Q A SG11201405348Q A SG 11201405348QA
- Authority
- SG
- Singapore
- Prior art keywords
- recording medium
- magnetic recording
- sputtering target
- producing same
- producing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053785 | 2012-03-09 | ||
PCT/JP2013/055672 WO2013133163A1 (en) | 2012-03-09 | 2013-03-01 | Sputtering target for magnetic recording medium, and process for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201405348QA true SG11201405348QA (en) | 2014-11-27 |
Family
ID=49116643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201405348QA SG11201405348QA (en) | 2012-03-09 | 2013-03-01 | Sputtering target for magnetic recording medium, and process for producing same |
Country Status (7)
Country | Link |
---|---|
US (2) | US9970099B2 (en) |
JP (2) | JP6083679B2 (en) |
CN (1) | CN104170015B (en) |
MY (2) | MY174585A (en) |
SG (1) | SG11201405348QA (en) |
TW (1) | TW201400632A (en) |
WO (1) | WO2013133163A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3015566B1 (en) * | 2013-11-28 | 2021-09-15 | JX Nippon Mining & Metals Corporation | Magnetic material sputtering target and method for producing same |
SG11201704465WA (en) | 2015-03-04 | 2017-06-29 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and method for producing same |
TWI684658B (en) * | 2016-12-06 | 2020-02-11 | 光洋應用材料科技股份有限公司 | Co-cr-pt-based alloy sputtering target and method of preparing the same |
JP7483999B1 (en) | 2023-09-22 | 2024-05-15 | Jx金属株式会社 | Sputtering targets and sputtering target assemblies |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5282946A (en) * | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
JPH05247638A (en) * | 1992-03-03 | 1993-09-24 | Mitsubishi Materials Corp | Sputtering target and manufacture therefore |
JP2857729B2 (en) | 1992-07-24 | 1999-02-17 | 株式会社クボタ | Target member for spatter and method for producing the same |
JPH06104120A (en) | 1992-08-03 | 1994-04-15 | Hitachi Metals Ltd | Sputtering target for magnetic recording medium and its production |
JP2806228B2 (en) * | 1993-10-25 | 1998-09-30 | 株式会社神戸製鋼所 | Method for lowering magnetic permeability of hard-to-work Co alloy |
JP2000282229A (en) * | 1999-03-29 | 2000-10-10 | Hitachi Metals Ltd | CoPt SPUTTERING TARGET, ITS PRODUCTION, MAGNETIC RECORDING FILM AND CoPt MAGNETIC RECORDING MEDIUM |
JP2001026860A (en) | 1999-07-14 | 2001-01-30 | Hitachi Metals Ltd | Co-Pt-B BASE TARGET AND ITS PRODUCTION |
JP2001098360A (en) | 1999-09-24 | 2001-04-10 | Hitachi Metals Ltd | Co-Cr-Pt-C TARGET, ITS MANUFACTURE, AND MAGNETIC RECORDING MEDIUM |
US6599377B2 (en) * | 1999-10-01 | 2003-07-29 | Heraeus, Inc. | Wrought processing of brittle target alloy for sputtering applications |
JP4573381B2 (en) | 1999-12-24 | 2010-11-04 | 三井金属鉱業株式会社 | Manufacturing method of sputtering target |
US7336336B2 (en) | 2003-10-14 | 2008-02-26 | Lg. Philips Co. Ltd. | Thin film transistor array substrate, method of fabricating the same, liquid crystal display panel having the same and fabricating method thereof |
JP4026767B2 (en) * | 2003-11-11 | 2007-12-26 | 日鉱金属株式会社 | Co-Cr-Pt-B alloy sputtering target and method for producing the same |
JP4827033B2 (en) * | 2004-03-01 | 2011-11-30 | Jx日鉱日石金属株式会社 | Sputtering target with less surface defects and surface processing method thereof |
WO2005093124A1 (en) * | 2004-03-26 | 2005-10-06 | Nippon Mining & Metals Co., Ltd. | Co-Cr-Pt-B BASED ALLOY SPUTTERING TARGET |
US20050277002A1 (en) | 2004-06-15 | 2005-12-15 | Heraeus, Inc. | Enhanced sputter target alloy compositions |
US20050274221A1 (en) | 2004-06-15 | 2005-12-15 | Heraeus, Inc. | Enhanced sputter target alloy compositions |
US20070017803A1 (en) | 2005-07-22 | 2007-01-25 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
US9034153B2 (en) | 2006-01-13 | 2015-05-19 | Jx Nippon Mining & Metals Corporation | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
JP2008023545A (en) * | 2006-07-19 | 2008-02-07 | Mitsui Mining & Smelting Co Ltd | Method for manufacturing hardly workable alloy sputtering target material |
CN101981224B (en) | 2008-03-28 | 2012-08-22 | Jx日矿日石金属株式会社 | Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material |
US9103023B2 (en) | 2009-03-27 | 2015-08-11 | Jx Nippon Mining & Metals Corporation | Nonmagnetic material particle-dispersed ferromagnetic material sputtering target |
US9034155B2 (en) | 2009-08-06 | 2015-05-19 | Jx Nippon Mining & Metals Corporation | Inorganic-particle-dispersed sputtering target |
US9269389B2 (en) | 2009-12-11 | 2016-02-23 | Jx Nippon Mining & Metals Corporation | Sputtering target of magnetic material |
MY149437A (en) | 2010-01-21 | 2013-08-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
WO2012011204A1 (en) | 2010-07-20 | 2012-01-26 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target with little particle generation |
SG185768A1 (en) | 2010-07-20 | 2013-01-30 | Jx Nippon Mining & Metals Corp | Sputtering target of ferromagnetic material with low generation of particles |
MY160775A (en) | 2010-09-03 | 2017-03-15 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
US8953732B2 (en) * | 2010-12-09 | 2015-02-10 | Westinghouse Electric Company Llc | Nuclear reactor internal hydraulic control rod drive mechanism assembly |
MY158512A (en) | 2010-12-09 | 2016-10-14 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
US20130175167A1 (en) | 2010-12-15 | 2013-07-11 | Jx Nippon Mining & Metals Corporation | Ferromagnetic sputtering target and method for manufacturing same |
WO2012081669A1 (en) | 2010-12-17 | 2012-06-21 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target |
MY155977A (en) | 2010-12-22 | 2015-12-31 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target |
CN103270190B (en) | 2010-12-22 | 2016-01-20 | 吉坤日矿日石金属株式会社 | Sinter sputtering target |
CN108642456B (en) | 2011-06-30 | 2022-03-25 | 吉坤日矿日石金属株式会社 | Co-Cr-Pt-B alloy sputtering target and method for producing same |
WO2013027443A1 (en) | 2011-08-23 | 2013-02-28 | Jx日鉱日石金属株式会社 | Ferromagnetic sputtering target with minimized particle generation |
-
2013
- 2013-03-01 WO PCT/JP2013/055672 patent/WO2013133163A1/en active Application Filing
- 2013-03-01 JP JP2014503813A patent/JP6083679B2/en active Active
- 2013-03-01 MY MYPI2014702477A patent/MY174585A/en unknown
- 2013-03-01 CN CN201380013280.3A patent/CN104170015B/en active Active
- 2013-03-01 MY MYPI2018703314A patent/MY192950A/en unknown
- 2013-03-01 SG SG11201405348QA patent/SG11201405348QA/en unknown
- 2013-03-01 US US14/383,219 patent/US9970099B2/en active Active
- 2013-03-05 TW TW102107594A patent/TW201400632A/en unknown
-
2015
- 2015-04-02 JP JP2015075813A patent/JP6231035B2/en active Active
-
2018
- 2018-02-06 US US15/889,864 patent/US10266939B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10266939B2 (en) | 2019-04-23 |
JPWO2013133163A1 (en) | 2015-07-30 |
JP6083679B2 (en) | 2017-02-22 |
CN104170015B (en) | 2018-08-31 |
TW201400632A (en) | 2014-01-01 |
JP2015180775A (en) | 2015-10-15 |
US20180163294A1 (en) | 2018-06-14 |
JP6231035B2 (en) | 2017-11-15 |
WO2013133163A1 (en) | 2013-09-12 |
CN104170015A (en) | 2014-11-26 |
MY192950A (en) | 2022-09-19 |
US9970099B2 (en) | 2018-05-15 |
US20150027882A1 (en) | 2015-01-29 |
TWI563107B (en) | 2016-12-21 |
MY174585A (en) | 2020-04-28 |
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