SG11201403340WA - Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell - Google Patents

Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell

Info

Publication number
SG11201403340WA
SG11201403340WA SG11201403340WA SG11201403340WA SG11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA SG 11201403340W A SG11201403340W A SG 11201403340WA
Authority
SG
Singapore
Prior art keywords
solar cell
junction solar
producing
semifinished product
junction
Prior art date
Application number
SG11201403340WA
Inventor
Daniel Fuhrmann
Original Assignee
Azur Space Solar Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azur Space Solar Power Gmbh filed Critical Azur Space Solar Power Gmbh
Publication of SG11201403340WA publication Critical patent/SG11201403340WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
SG11201403340WA 2012-01-20 2013-01-14 Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell SG11201403340WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12000386.8A EP2618385A1 (en) 2012-01-20 2012-01-20 Semi-finished product of a multiple solar cell and method for manufacturing a multiple solar cell
PCT/EP2013/000096 WO2013107628A2 (en) 2012-01-20 2013-01-14 Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell

Publications (1)

Publication Number Publication Date
SG11201403340WA true SG11201403340WA (en) 2014-09-26

Family

ID=47666077

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403340WA SG11201403340WA (en) 2012-01-20 2013-01-14 Semifinished product of a multi-junction solar cell and method for producing a multi-junction solar cell

Country Status (6)

Country Link
US (1) US9666738B2 (en)
EP (2) EP2618385A1 (en)
JP (1) JP5893170B2 (en)
CN (1) CN104054188B (en)
SG (1) SG11201403340WA (en)
WO (1) WO2013107628A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831363B2 (en) * 2014-06-19 2017-11-28 John Farah Laser epitaxial lift-off of high efficiency solar cell
TWI656651B (en) 2014-02-05 2019-04-11 美商太陽光電公司 Monolithic multijunction power converter
DE102015006379B4 (en) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Scalable voltage source
DE102016001386A1 (en) 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh Stacked multiple solar cell
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
DE102018002426A1 (en) * 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stacked III-V semiconductor device and manufacturing method
WO2020185528A1 (en) 2019-03-11 2020-09-17 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
US11658256B2 (en) 2019-12-16 2023-05-23 Solaero Technologies Corp. Multijunction solar cells
US11362230B1 (en) 2021-01-28 2022-06-14 Solaero Technologies Corp. Multijunction solar cells

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171167A (en) 1986-01-23 1987-07-28 Mitsubishi Electric Corp Manufacture of solar cell
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
DE19649594A1 (en) 1996-11-29 1998-06-04 Deutsche Telekom Ag Optical pulse reflectometer
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP3856750B2 (en) * 2001-11-13 2006-12-13 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US6951819B2 (en) * 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
JPWO2005096397A1 (en) * 2004-03-31 2008-02-21 ローム株式会社 Laminated thin film solar cell and method for producing the same
DE102005047152A1 (en) 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxial substrate, process for its preparation and method for producing a semiconductor chip
US8022292B2 (en) * 2006-10-02 2011-09-20 SolASE Corporation Photovoltaic device employing a resonator cavity
DE102008019268A1 (en) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
US9064810B2 (en) 2008-10-10 2015-06-23 Alta Devices, Inc. Mesa etch method and composition for epitaxial lift off
US7785989B2 (en) 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
EP2454761A1 (en) * 2009-07-17 2012-05-23 Soitec Method of bonding using a bonding layer based on zinc, silicon and oxygen and corresponding structures
JP2011124946A (en) * 2009-12-14 2011-06-23 Panasonic Corp Solid-state image sensor and camera with the same
KR101460086B1 (en) * 2009-12-15 2014-11-10 소이텍 Process for recycling a substrate
FR2954002B1 (en) * 2009-12-16 2013-01-18 Emcore Solar Power Inc PROCESS FOR THE PRODUCTION OF REVERSE METAMORPHIC MULTIJUNCTION SOLAR CELLS
US9559229B2 (en) * 2009-12-31 2017-01-31 Epistar Corporation Multi-junction solar cell
KR100969131B1 (en) * 2010-03-05 2010-07-07 엘지이노텍 주식회사 Method for fabricating of light emitting device

Also Published As

Publication number Publication date
JP5893170B2 (en) 2016-03-23
US20140326300A1 (en) 2014-11-06
WO2013107628A3 (en) 2013-11-07
JP2015505641A (en) 2015-02-23
EP2805357A2 (en) 2014-11-26
EP2618385A1 (en) 2013-07-24
CN104054188A (en) 2014-09-17
CN104054188B (en) 2017-03-08
US9666738B2 (en) 2017-05-30
WO2013107628A2 (en) 2013-07-25
EP2805357B1 (en) 2018-10-24

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