SG11201402547QA - Method for forming metal silicide layers - Google Patents
Method for forming metal silicide layersInfo
- Publication number
- SG11201402547QA SG11201402547QA SG11201402547QA SG11201402547QA SG11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA
- Authority
- SG
- Singapore
- Prior art keywords
- metal silicide
- forming metal
- silicide layers
- layers
- forming
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161563433P | 2011-11-23 | 2011-11-23 | |
PCT/EP2012/073510 WO2013076267A1 (en) | 2011-11-23 | 2012-11-23 | Method for forming metal silicide layers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201402547QA true SG11201402547QA (en) | 2014-06-27 |
Family
ID=47297186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201402547QA SG11201402547QA (en) | 2011-11-23 | 2012-11-23 | Method for forming metal silicide layers |
Country Status (8)
Country | Link |
---|---|
US (1) | US9496432B2 (en) |
EP (1) | EP2783396B1 (en) |
JP (1) | JP6359457B2 (en) |
KR (1) | KR101954436B1 (en) |
CN (1) | CN104603954B (en) |
SG (1) | SG11201402547QA (en) |
TW (1) | TWI591836B (en) |
WO (1) | WO2013076267A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160090287A (en) * | 2013-09-27 | 2016-07-29 | 덴마크스 텍니스케 유니버시테트 | Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells |
US9362427B2 (en) * | 2013-12-20 | 2016-06-07 | Sunpower Corporation | Metallization of solar cells |
KR102098123B1 (en) * | 2014-12-19 | 2020-04-08 | 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 | Process of forming a photoactive layer of an optoelectronic device |
CN106129183B (en) * | 2016-08-10 | 2017-10-27 | 江苏大学 | One kind improves gallium arsenide solar cell photoelectric transformation efficiency method |
ES2754148A1 (en) | 2018-10-11 | 2020-04-15 | Fund Cener Ciemat | SOLAR PHOTOVOLTAIC CELL AND MANUFACTURING PROCEDURE (Machine-translation by Google Translate, not legally binding) |
CN110817881B (en) * | 2019-11-28 | 2021-06-29 | 中国科学院广州地球化学研究所 | Silicon-transition metal silicide nano composite material and preparation method and application thereof |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007035333A1 (en) * | 2005-09-16 | 2007-03-29 | Cree, Inc. | Methods of processing semiconductor wafers having silicon carbide power devices thereon |
JP4698460B2 (en) * | 2006-03-27 | 2011-06-08 | オムロンレーザーフロント株式会社 | Laser annealing equipment |
DE102006050360B4 (en) * | 2006-10-25 | 2014-05-15 | Infineon Technologies Austria Ag | Method for generating an electrical contact on SiC |
US20090223549A1 (en) | 2008-03-10 | 2009-09-10 | Calisolar, Inc. | solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials |
EP2141750B1 (en) * | 2008-07-02 | 2013-10-16 | Rohm and Haas Electronic Materials LLC | Method of light induced plating on semiconductors |
TWI366919B (en) * | 2008-09-19 | 2012-06-21 | Gintech Energy Corp | Structure of solar cell and its production method |
US20100075499A1 (en) * | 2008-09-19 | 2010-03-25 | Olsen Christopher S | Method and apparatus for metal silicide formation |
EP2239084A1 (en) | 2009-04-07 | 2010-10-13 | Excico France | Method of and apparatus for irradiating a semiconductor material surface by laser energy |
KR20100116833A (en) * | 2009-04-23 | 2010-11-02 | 주식회사 티지솔라 | Solar cell including metallic silicide layer and method for fabricating the same |
JP5631113B2 (en) * | 2009-08-25 | 2014-11-26 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Improved method for forming nickel silicide |
US8426236B2 (en) * | 2010-05-07 | 2013-04-23 | International Business Machines Corporation | Method and structure of photovoltaic grid stacks by solution based processes |
US8492899B2 (en) * | 2010-10-14 | 2013-07-23 | International Business Machines Corporation | Method to electrodeposit nickel on silicon for forming controllable nickel silicide |
US8618582B2 (en) * | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
KR20140072957A (en) * | 2012-12-05 | 2014-06-16 | 현대중공업 주식회사 | Method for fabricating solar cell |
-
2012
- 2012-11-23 SG SG11201402547QA patent/SG11201402547QA/en unknown
- 2012-11-23 EP EP12797813.8A patent/EP2783396B1/en not_active Not-in-force
- 2012-11-23 TW TW101144041A patent/TWI591836B/en not_active IP Right Cessation
- 2012-11-23 KR KR1020147016918A patent/KR101954436B1/en active IP Right Grant
- 2012-11-23 WO PCT/EP2012/073510 patent/WO2013076267A1/en active Application Filing
- 2012-11-23 JP JP2014542859A patent/JP6359457B2/en not_active Expired - Fee Related
- 2012-11-23 US US14/360,580 patent/US9496432B2/en active Active
- 2012-11-23 CN CN201280067725.1A patent/CN104603954B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101954436B1 (en) | 2019-03-05 |
US9496432B2 (en) | 2016-11-15 |
EP2783396A1 (en) | 2014-10-01 |
KR20140128296A (en) | 2014-11-05 |
CN104603954B (en) | 2017-10-13 |
EP2783396B1 (en) | 2017-01-11 |
JP2015504606A (en) | 2015-02-12 |
TW201334199A (en) | 2013-08-16 |
TWI591836B (en) | 2017-07-11 |
US20140335646A1 (en) | 2014-11-13 |
WO2013076267A1 (en) | 2013-05-30 |
CN104603954A (en) | 2015-05-06 |
JP6359457B2 (en) | 2018-07-18 |
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