SG11201402547QA - Method for forming metal silicide layers - Google Patents

Method for forming metal silicide layers

Info

Publication number
SG11201402547QA
SG11201402547QA SG11201402547QA SG11201402547QA SG11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA SG 11201402547Q A SG11201402547Q A SG 11201402547QA
Authority
SG
Singapore
Prior art keywords
metal silicide
forming metal
silicide layers
layers
forming
Prior art date
Application number
SG11201402547QA
Inventor
Loic Tous
Monica Aleman
Joachim John
Thierry Emeraud
Original Assignee
Imec
Univ Leuven Kath
Excico Group Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Univ Leuven Kath, Excico Group Nv filed Critical Imec
Publication of SG11201402547QA publication Critical patent/SG11201402547QA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051Deposition of metallic or metal-silicide layers
    • H01L21/32053Deposition of metallic or metal-silicide layers of metal-silicide layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
SG11201402547QA 2011-11-23 2012-11-23 Method for forming metal silicide layers SG11201402547QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161563433P 2011-11-23 2011-11-23
PCT/EP2012/073510 WO2013076267A1 (en) 2011-11-23 2012-11-23 Method for forming metal silicide layers

Publications (1)

Publication Number Publication Date
SG11201402547QA true SG11201402547QA (en) 2014-06-27

Family

ID=47297186

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402547QA SG11201402547QA (en) 2011-11-23 2012-11-23 Method for forming metal silicide layers

Country Status (8)

Country Link
US (1) US9496432B2 (en)
EP (1) EP2783396B1 (en)
JP (1) JP6359457B2 (en)
KR (1) KR101954436B1 (en)
CN (1) CN104603954B (en)
SG (1) SG11201402547QA (en)
TW (1) TWI591836B (en)
WO (1) WO2013076267A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160090287A (en) * 2013-09-27 2016-07-29 덴마크스 텍니스케 유니버시테트 Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells
US9362427B2 (en) * 2013-12-20 2016-06-07 Sunpower Corporation Metallization of solar cells
KR102098123B1 (en) * 2014-12-19 2020-04-08 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 Process of forming a photoactive layer of an optoelectronic device
CN106129183B (en) * 2016-08-10 2017-10-27 江苏大学 One kind improves gallium arsenide solar cell photoelectric transformation efficiency method
ES2754148A1 (en) 2018-10-11 2020-04-15 Fund Cener Ciemat SOLAR PHOTOVOLTAIC CELL AND MANUFACTURING PROCEDURE (Machine-translation by Google Translate, not legally binding)
CN110817881B (en) * 2019-11-28 2021-06-29 中国科学院广州地球化学研究所 Silicon-transition metal silicide nano composite material and preparation method and application thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007035333A1 (en) * 2005-09-16 2007-03-29 Cree, Inc. Methods of processing semiconductor wafers having silicon carbide power devices thereon
JP4698460B2 (en) * 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 Laser annealing equipment
DE102006050360B4 (en) * 2006-10-25 2014-05-15 Infineon Technologies Austria Ag Method for generating an electrical contact on SiC
US20090223549A1 (en) 2008-03-10 2009-09-10 Calisolar, Inc. solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials
EP2141750B1 (en) * 2008-07-02 2013-10-16 Rohm and Haas Electronic Materials LLC Method of light induced plating on semiconductors
TWI366919B (en) * 2008-09-19 2012-06-21 Gintech Energy Corp Structure of solar cell and its production method
US20100075499A1 (en) * 2008-09-19 2010-03-25 Olsen Christopher S Method and apparatus for metal silicide formation
EP2239084A1 (en) 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
KR20100116833A (en) * 2009-04-23 2010-11-02 주식회사 티지솔라 Solar cell including metallic silicide layer and method for fabricating the same
JP5631113B2 (en) * 2009-08-25 2014-11-26 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. Improved method for forming nickel silicide
US8426236B2 (en) * 2010-05-07 2013-04-23 International Business Machines Corporation Method and structure of photovoltaic grid stacks by solution based processes
US8492899B2 (en) * 2010-10-14 2013-07-23 International Business Machines Corporation Method to electrodeposit nickel on silicon for forming controllable nickel silicide
US8618582B2 (en) * 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
KR20140072957A (en) * 2012-12-05 2014-06-16 현대중공업 주식회사 Method for fabricating solar cell

Also Published As

Publication number Publication date
KR101954436B1 (en) 2019-03-05
US9496432B2 (en) 2016-11-15
EP2783396A1 (en) 2014-10-01
KR20140128296A (en) 2014-11-05
CN104603954B (en) 2017-10-13
EP2783396B1 (en) 2017-01-11
JP2015504606A (en) 2015-02-12
TW201334199A (en) 2013-08-16
TWI591836B (en) 2017-07-11
US20140335646A1 (en) 2014-11-13
WO2013076267A1 (en) 2013-05-30
CN104603954A (en) 2015-05-06
JP6359457B2 (en) 2018-07-18

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