SG11201400841XA - Varying bandgap solar cell - Google Patents
Varying bandgap solar cellInfo
- Publication number
- SG11201400841XA SG11201400841XA SG11201400841XA SG11201400841XA SG11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA SG 11201400841X A SG11201400841X A SG 11201400841XA
- Authority
- SG
- Singapore
- Prior art keywords
- solar cell
- bandgap solar
- varying bandgap
- varying
- cell
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2011903944A AU2011903944A0 (en) | 2011-09-23 | Varying bandgap solar cell | |
PCT/AU2012/001152 WO2013040659A1 (en) | 2011-09-23 | 2012-09-21 | Varying bandgap solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400841XA true SG11201400841XA (en) | 2014-04-28 |
Family
ID=47913689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400841XA SG11201400841XA (en) | 2011-09-23 | 2012-09-21 | Varying bandgap solar cell |
Country Status (9)
Country | Link |
---|---|
US (1) | US20150101657A1 (en) |
EP (1) | EP2758996B1 (en) |
JP (1) | JP6335784B2 (en) |
KR (1) | KR102180986B1 (en) |
CN (1) | CN103946988B (en) |
AU (1) | AU2012313362B2 (en) |
HK (1) | HK1200242A1 (en) |
SG (1) | SG11201400841XA (en) |
WO (1) | WO2013040659A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104201220B (en) * | 2014-08-26 | 2016-06-29 | 中国科学院半导体研究所 | Indium gallium nitrogen/nitride multi-quantum well solaode containing low temperature interposed layer |
CN105185861A (en) * | 2015-08-05 | 2015-12-23 | 辽宁恒华航海电力设备工程有限公司 | Glass-structure-based thin-film solar battery and preparation method thereof |
EP3566249B1 (en) | 2017-01-05 | 2023-11-29 | Brilliant Light Power, Inc. | Extreme and deep ultraviolet photovoltaic cell |
JP6891865B2 (en) * | 2018-10-25 | 2021-06-18 | 日亜化学工業株式会社 | Light emitting element |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
JPS61120480A (en) * | 1984-11-16 | 1986-06-07 | Hitachi Ltd | Photoelectric converter |
JPS62128182A (en) * | 1985-11-28 | 1987-06-10 | Mitsubishi Electric Corp | Solar cell |
US6147296A (en) * | 1995-12-06 | 2000-11-14 | University Of Houston | Multi-quantum well tandem solar cell |
JP2945647B2 (en) * | 1998-02-02 | 1999-09-06 | 株式会社日立製作所 | Solar cell |
EP2273571A3 (en) * | 1998-03-12 | 2012-06-27 | Nichia Corporation | A nitride semiconductor device |
WO2001047031A2 (en) * | 1999-12-13 | 2001-06-28 | Swales Aerospace | Graded band gap multiple quantum well solar cell |
US6437233B1 (en) * | 2000-07-25 | 2002-08-20 | Trw Inc. | Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
GB0118150D0 (en) * | 2001-07-25 | 2001-09-19 | Imperial College | Thermophotovoltaic device |
US7119359B2 (en) * | 2002-12-05 | 2006-10-10 | Research Foundation Of The City University Of New York | Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures |
US20050211291A1 (en) * | 2004-03-23 | 2005-09-29 | The Boeing Company | Solar cell assembly |
CN1938864B (en) * | 2004-03-31 | 2011-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation detector |
US20050247339A1 (en) * | 2004-05-10 | 2005-11-10 | Imperial College Innovations Limited | Method of operating a solar cell |
US7838869B2 (en) * | 2005-10-21 | 2010-11-23 | Georgia State University Research Foundation, Inc. | Dual band photodetector |
US7629532B2 (en) * | 2006-12-29 | 2009-12-08 | Sundiode, Inc. | Solar cell having active region with nanostructures having energy wells |
US20090173373A1 (en) * | 2008-01-07 | 2009-07-09 | Wladyslaw Walukiewicz | Group III-Nitride Solar Cell with Graded Compositions |
US8395042B2 (en) * | 2008-03-24 | 2013-03-12 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum dot solar cell with quantum dot bandgap gradients |
GB2463905B (en) * | 2008-09-29 | 2012-06-06 | Jds Uniphase Corp | Photovoltaic cell |
WO2011016537A1 (en) * | 2009-08-06 | 2011-02-10 | 国立大学法人千葉大学 | Photoelectric conversion device |
US8106421B2 (en) * | 2009-08-21 | 2012-01-31 | University Of Seoul Industry Cooperation Foundation | Photovoltaic devices |
CN102103990B (en) * | 2009-12-17 | 2012-11-21 | 上海蓝光科技有限公司 | Preparation method of multiple quantum well structure for photoelectric device |
-
2012
- 2012-09-21 EP EP12832908.3A patent/EP2758996B1/en active Active
- 2012-09-21 WO PCT/AU2012/001152 patent/WO2013040659A1/en active Application Filing
- 2012-09-21 AU AU2012313362A patent/AU2012313362B2/en active Active
- 2012-09-21 KR KR1020147009265A patent/KR102180986B1/en active IP Right Grant
- 2012-09-21 US US14/346,551 patent/US20150101657A1/en not_active Abandoned
- 2012-09-21 CN CN201280057556.3A patent/CN103946988B/en active Active
- 2012-09-21 SG SG11201400841XA patent/SG11201400841XA/en unknown
- 2012-09-21 JP JP2014531050A patent/JP6335784B2/en active Active
-
2015
- 2015-01-15 HK HK15100488.2A patent/HK1200242A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
AU2012313362A1 (en) | 2013-05-09 |
US20150101657A1 (en) | 2015-04-16 |
WO2013040659A1 (en) | 2013-03-28 |
EP2758996A1 (en) | 2014-07-30 |
CN103946988B (en) | 2016-11-16 |
EP2758996A4 (en) | 2015-05-27 |
HK1200242A1 (en) | 2015-07-31 |
JP6335784B2 (en) | 2018-05-30 |
AU2012313362B2 (en) | 2014-08-07 |
EP2758996B1 (en) | 2020-04-01 |
KR102180986B1 (en) | 2020-11-20 |
JP2014531758A (en) | 2014-11-27 |
CN103946988A (en) | 2014-07-23 |
KR20140066219A (en) | 2014-05-30 |
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