SG108898A1 - Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer - Google Patents
Use of fluorine implantation to form a charge balanced nitrided gate dielectric layerInfo
- Publication number
- SG108898A1 SG108898A1 SG200300168A SG200300168A SG108898A1 SG 108898 A1 SG108898 A1 SG 108898A1 SG 200300168 A SG200300168 A SG 200300168A SG 200300168 A SG200300168 A SG 200300168A SG 108898 A1 SG108898 A1 SG 108898A1
- Authority
- SG
- Singapore
- Prior art keywords
- dielectric layer
- gate dielectric
- charge balanced
- nitrided gate
- fluorine implantation
- Prior art date
Links
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91101311A TW525264B (en) | 2002-01-25 | 2002-01-25 | Manufacturing method of gate dielectric layer |
US10/351,158 US6825133B2 (en) | 2003-01-22 | 2003-01-22 | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG108898A1 true SG108898A1 (en) | 2005-02-28 |
Family
ID=34576079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200300168A SG108898A1 (en) | 2002-01-25 | 2003-01-25 | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG108898A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
US20020019085A1 (en) * | 2000-08-10 | 2002-02-14 | National Science Council | Method of forming a gate oxide layer with an improved ability to resist the process damage |
US6664172B2 (en) * | 2002-01-22 | 2003-12-16 | United Microelectronics Corp. | Method of forming a MOS transistor with improved threshold voltage stability |
-
2003
- 2003-01-25 SG SG200300168A patent/SG108898A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
US20020019085A1 (en) * | 2000-08-10 | 2002-02-14 | National Science Council | Method of forming a gate oxide layer with an improved ability to resist the process damage |
US6664172B2 (en) * | 2002-01-22 | 2003-12-16 | United Microelectronics Corp. | Method of forming a MOS transistor with improved threshold voltage stability |
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