SG106579A1 - Pulsed single contact optical beam induced current analysis of integrated circuits - Google Patents
Pulsed single contact optical beam induced current analysis of integrated circuitsInfo
- Publication number
- SG106579A1 SG106579A1 SG200002028A SG200002028A SG106579A1 SG 106579 A1 SG106579 A1 SG 106579A1 SG 200002028 A SG200002028 A SG 200002028A SG 200002028 A SG200002028 A SG 200002028A SG 106579 A1 SG106579 A1 SG 106579A1
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuits
- optical beam
- induced current
- single contact
- current analysis
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200002028A SG106579A1 (en) | 2000-04-12 | 2000-04-12 | Pulsed single contact optical beam induced current analysis of integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200002028A SG106579A1 (en) | 2000-04-12 | 2000-04-12 | Pulsed single contact optical beam induced current analysis of integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
SG106579A1 true SG106579A1 (en) | 2004-10-29 |
Family
ID=34075282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200002028A SG106579A1 (en) | 2000-04-12 | 2000-04-12 | Pulsed single contact optical beam induced current analysis of integrated circuits |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG106579A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077021B1 (en) * | 1981-10-09 | 1986-05-07 | Hitachi, Ltd. | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
EP0335444B1 (en) * | 1988-03-29 | 1993-09-22 | STMicroelectronics S.r.l. | Method and apparatus for measuring the lifetime on p-n semiconductor junctions by photovoltaic effect |
US5963781A (en) * | 1997-09-30 | 1999-10-05 | Intel Corporation | Technique for determining semiconductor substrate thickness |
-
2000
- 2000-04-12 SG SG200002028A patent/SG106579A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0077021B1 (en) * | 1981-10-09 | 1986-05-07 | Hitachi, Ltd. | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
EP0335444B1 (en) * | 1988-03-29 | 1993-09-22 | STMicroelectronics S.r.l. | Method and apparatus for measuring the lifetime on p-n semiconductor junctions by photovoltaic effect |
US5963781A (en) * | 1997-09-30 | 1999-10-05 | Intel Corporation | Technique for determining semiconductor substrate thickness |
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