SG106579A1 - Pulsed single contact optical beam induced current analysis of integrated circuits - Google Patents

Pulsed single contact optical beam induced current analysis of integrated circuits

Info

Publication number
SG106579A1
SG106579A1 SG200002028A SG200002028A SG106579A1 SG 106579 A1 SG106579 A1 SG 106579A1 SG 200002028 A SG200002028 A SG 200002028A SG 200002028 A SG200002028 A SG 200002028A SG 106579 A1 SG106579 A1 SG 106579A1
Authority
SG
Singapore
Prior art keywords
integrated circuits
optical beam
induced current
single contact
current analysis
Prior art date
Application number
SG200002028A
Inventor
S H Chan Daniel
Jiann Min Chin
Kolachina Sivaramakrishna
C H Phang Jacob
Original Assignee
Jiann Min Chin
Kolachina Sivaramakrishna
C H Phang Jacob
S H Chan Daniel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiann Min Chin, Kolachina Sivaramakrishna, C H Phang Jacob, S H Chan Daniel filed Critical Jiann Min Chin
Priority to SG200002028A priority Critical patent/SG106579A1/en
Publication of SG106579A1 publication Critical patent/SG106579A1/en

Links

SG200002028A 2000-04-12 2000-04-12 Pulsed single contact optical beam induced current analysis of integrated circuits SG106579A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200002028A SG106579A1 (en) 2000-04-12 2000-04-12 Pulsed single contact optical beam induced current analysis of integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200002028A SG106579A1 (en) 2000-04-12 2000-04-12 Pulsed single contact optical beam induced current analysis of integrated circuits

Publications (1)

Publication Number Publication Date
SG106579A1 true SG106579A1 (en) 2004-10-29

Family

ID=34075282

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002028A SG106579A1 (en) 2000-04-12 2000-04-12 Pulsed single contact optical beam induced current analysis of integrated circuits

Country Status (1)

Country Link
SG (1) SG106579A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077021B1 (en) * 1981-10-09 1986-05-07 Hitachi, Ltd. Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction
EP0335444B1 (en) * 1988-03-29 1993-09-22 STMicroelectronics S.r.l. Method and apparatus for measuring the lifetime on p-n semiconductor junctions by photovoltaic effect
US5963781A (en) * 1997-09-30 1999-10-05 Intel Corporation Technique for determining semiconductor substrate thickness

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077021B1 (en) * 1981-10-09 1986-05-07 Hitachi, Ltd. Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction
EP0335444B1 (en) * 1988-03-29 1993-09-22 STMicroelectronics S.r.l. Method and apparatus for measuring the lifetime on p-n semiconductor junctions by photovoltaic effect
US5963781A (en) * 1997-09-30 1999-10-05 Intel Corporation Technique for determining semiconductor substrate thickness

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