SG10202107291WA - Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation - Google Patents

Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

Info

Publication number
SG10202107291WA
SG10202107291WA SG10202107291WA SG10202107291WA SG10202107291WA SG 10202107291W A SG10202107291W A SG 10202107291WA SG 10202107291W A SG10202107291W A SG 10202107291WA SG 10202107291W A SG10202107291W A SG 10202107291WA SG 10202107291W A SG10202107291W A SG 10202107291WA
Authority
SG
Singapore
Prior art keywords
edge
trajectory control
ion trajectory
plasma operation
wafer profile
Prior art date
Application number
SG10202107291WA
Inventor
Sriraman Saravanapriyan
Paterson Alexander
Kamp Tom
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10202107291WA publication Critical patent/SG10202107291WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10202107291WA 2015-07-13 2016-03-11 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation SG10202107291WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562191817P 2015-07-13 2015-07-13

Publications (1)

Publication Number Publication Date
SG10202107291WA true SG10202107291WA (en) 2021-08-30

Family

ID=57776368

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201601910WA SG10201601910WA (en) 2015-07-13 2016-03-11 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
SG10202107291WA SG10202107291WA (en) 2015-07-13 2016-03-11 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201601910WA SG10201601910WA (en) 2015-07-13 2016-03-11 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

Country Status (6)

Country Link
US (1) US10163610B2 (en)
JP (2) JP6852974B2 (en)
KR (2) KR102570642B1 (en)
CN (1) CN106356274B (en)
SG (2) SG10201601910WA (en)
TW (3) TWI697951B (en)

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Also Published As

Publication number Publication date
KR20230127181A (en) 2023-08-31
CN106356274B (en) 2019-01-01
TW202213511A (en) 2022-04-01
TWI810752B (en) 2023-08-01
SG10201601910WA (en) 2017-02-27
JP6852974B2 (en) 2021-03-31
TW201705266A (en) 2017-02-01
TWI697951B (en) 2020-07-01
US10163610B2 (en) 2018-12-25
KR20170008138A (en) 2017-01-23
US20170018411A1 (en) 2017-01-19
JP7177200B2 (en) 2022-11-22
JP2017055100A (en) 2017-03-16
KR102570642B1 (en) 2023-08-23
JP2021100141A (en) 2021-07-01
TWI753436B (en) 2022-01-21
TW202034400A (en) 2020-09-16
CN106356274A (en) 2017-01-25

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