SG10202101800TA - Substrate support and plasma processing apparatus - Google Patents

Substrate support and plasma processing apparatus

Info

Publication number
SG10202101800TA
SG10202101800TA SG10202101800TA SG10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA
Authority
SG
Singapore
Prior art keywords
processing apparatus
plasma processing
substrate support
substrate
plasma
Prior art date
Application number
Inventor
Tamura Hajime
Sasaki Yasuharu
Yamaguchi Shin
Sugawara Tsuguto
Koizumi Katsuyuki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10202101800TA publication Critical patent/SG10202101800TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007Holding mechanisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
SG10202101800T 2020-03-25 2021-02-23 Substrate support and plasma processing apparatus SG10202101800TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020054019A JP7450427B2 (en) 2020-03-25 2020-03-25 Substrate support and plasma processing equipment

Publications (1)

Publication Number Publication Date
SG10202101800TA true SG10202101800TA (en) 2021-10-28

Family

ID=77808922

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202101800T SG10202101800TA (en) 2020-03-25 2021-02-23 Substrate support and plasma processing apparatus

Country Status (6)

Country Link
US (1) US11935729B2 (en)
JP (3) JP7450427B2 (en)
KR (1) KR20210119879A (en)
CN (1) CN113451095A (en)
SG (1) SG10202101800TA (en)
TW (1) TW202205513A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7344821B2 (en) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 plasma processing equipment
JP7450427B2 (en) 2020-03-25 2024-03-15 東京エレクトロン株式会社 Substrate support and plasma processing equipment
WO2023223736A1 (en) * 2022-05-19 2023-11-23 東京エレクトロン株式会社 Plasma processing device
WO2024038774A1 (en) * 2022-08-16 2024-02-22 東京エレクトロン株式会社 Plasma processing device and electrostatic chuck

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4547182B2 (en) 2003-04-24 2010-09-22 東京エレクトロン株式会社 Plasma processing equipment
JP4566789B2 (en) 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ Plasma processing method and plasma processing apparatus
JP4833890B2 (en) 2007-03-12 2011-12-07 東京エレクトロン株式会社 Plasma processing apparatus and plasma distribution correction method
JP5160802B2 (en) 2007-03-27 2013-03-13 東京エレクトロン株式会社 Plasma processing equipment
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2011228436A (en) 2010-04-19 2011-11-10 Hitachi High-Technologies Corp Plasma processing apparatus and plasma processing method
US10109464B2 (en) * 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US10665433B2 (en) 2016-09-19 2020-05-26 Varian Semiconductor Equipment Associates, Inc. Extreme edge uniformity control
JP6869034B2 (en) 2017-01-17 2021-05-12 東京エレクトロン株式会社 Plasma processing equipment
JP7045152B2 (en) 2017-08-18 2022-03-31 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
JP7061922B2 (en) 2018-04-27 2022-05-02 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment
KR102600003B1 (en) 2018-10-30 2023-11-09 삼성전자주식회사 Chmaber for semiconductor manufacturing process and manufacturing method for semiconductor device
US11562887B2 (en) 2018-12-10 2023-01-24 Tokyo Electron Limited Plasma processing apparatus and etching method
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
CN112466735A (en) 2019-09-09 2021-03-09 东京毅力科创株式会社 Substrate holder and plasma processing apparatus
JP7411463B2 (en) 2020-03-17 2024-01-11 東京エレクトロン株式会社 Inspection method and inspection device
US11551916B2 (en) * 2020-03-20 2023-01-10 Applied Materials, Inc. Sheath and temperature control of a process kit in a substrate processing chamber
JP7450427B2 (en) 2020-03-25 2024-03-15 東京エレクトロン株式会社 Substrate support and plasma processing equipment
JP7458287B2 (en) 2020-10-06 2024-03-29 東京エレクトロン株式会社 Plasma processing equipment and plasma processing method
CN115483083A (en) 2021-05-31 2022-12-16 东京毅力科创株式会社 Plasma processing apparatus
CN115705991A (en) 2021-08-10 2023-02-17 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
TW202205513A (en) 2022-02-01
CN113451095A (en) 2021-09-28
US20210305025A1 (en) 2021-09-30
KR20210119879A (en) 2021-10-06
US11935729B2 (en) 2024-03-19
JP7450427B2 (en) 2024-03-15
JP2024012609A (en) 2024-01-30
JP2021158134A (en) 2021-10-07
JP2024012608A (en) 2024-01-30

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