SG10202101800TA - Substrate support and plasma processing apparatus - Google Patents
Substrate support and plasma processing apparatusInfo
- Publication number
- SG10202101800TA SG10202101800TA SG10202101800TA SG10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- plasma processing
- substrate support
- substrate
- plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020054019A JP7450427B2 (en) | 2020-03-25 | 2020-03-25 | Substrate support and plasma processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202101800TA true SG10202101800TA (en) | 2021-10-28 |
Family
ID=77808922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202101800T SG10202101800TA (en) | 2020-03-25 | 2021-02-23 | Substrate support and plasma processing apparatus |
Country Status (6)
Country | Link |
---|---|
US (1) | US11935729B2 (en) |
JP (3) | JP7450427B2 (en) |
KR (1) | KR20210119879A (en) |
CN (1) | CN113451095A (en) |
SG (1) | SG10202101800TA (en) |
TW (1) | TW202205513A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7344821B2 (en) * | 2020-03-17 | 2023-09-14 | 東京エレクトロン株式会社 | plasma processing equipment |
JP7450427B2 (en) | 2020-03-25 | 2024-03-15 | 東京エレクトロン株式会社 | Substrate support and plasma processing equipment |
WO2023223736A1 (en) * | 2022-05-19 | 2023-11-23 | 東京エレクトロン株式会社 | Plasma processing device |
WO2024038774A1 (en) * | 2022-08-16 | 2024-02-22 | 東京エレクトロン株式会社 | Plasma processing device and electrostatic chuck |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP4547182B2 (en) | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP4566789B2 (en) | 2005-03-07 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | Plasma processing method and plasma processing apparatus |
JP4833890B2 (en) | 2007-03-12 | 2011-12-07 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma distribution correction method |
JP5160802B2 (en) | 2007-03-27 | 2013-03-13 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5496568B2 (en) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP2011228436A (en) | 2010-04-19 | 2011-11-10 | Hitachi High-Technologies Corp | Plasma processing apparatus and plasma processing method |
US10109464B2 (en) * | 2016-01-11 | 2018-10-23 | Applied Materials, Inc. | Minimization of ring erosion during plasma processes |
US10665433B2 (en) | 2016-09-19 | 2020-05-26 | Varian Semiconductor Equipment Associates, Inc. | Extreme edge uniformity control |
JP6869034B2 (en) | 2017-01-17 | 2021-05-12 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP7045152B2 (en) | 2017-08-18 | 2022-03-31 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
US11848177B2 (en) | 2018-02-23 | 2023-12-19 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
JP7061922B2 (en) | 2018-04-27 | 2022-05-02 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
KR102600003B1 (en) | 2018-10-30 | 2023-11-09 | 삼성전자주식회사 | Chmaber for semiconductor manufacturing process and manufacturing method for semiconductor device |
US11562887B2 (en) | 2018-12-10 | 2023-01-24 | Tokyo Electron Limited | Plasma processing apparatus and etching method |
US11955314B2 (en) | 2019-01-09 | 2024-04-09 | Tokyo Electron Limited | Plasma processing apparatus |
CN112466735A (en) | 2019-09-09 | 2021-03-09 | 东京毅力科创株式会社 | Substrate holder and plasma processing apparatus |
JP7411463B2 (en) | 2020-03-17 | 2024-01-11 | 東京エレクトロン株式会社 | Inspection method and inspection device |
US11551916B2 (en) * | 2020-03-20 | 2023-01-10 | Applied Materials, Inc. | Sheath and temperature control of a process kit in a substrate processing chamber |
JP7450427B2 (en) | 2020-03-25 | 2024-03-15 | 東京エレクトロン株式会社 | Substrate support and plasma processing equipment |
JP7458287B2 (en) | 2020-10-06 | 2024-03-29 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
CN115483083A (en) | 2021-05-31 | 2022-12-16 | 东京毅力科创株式会社 | Plasma processing apparatus |
CN115705991A (en) | 2021-08-10 | 2023-02-17 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
-
2020
- 2020-03-25 JP JP2020054019A patent/JP7450427B2/en active Active
-
2021
- 2021-02-23 SG SG10202101800T patent/SG10202101800TA/en unknown
- 2021-02-26 TW TW110106942A patent/TW202205513A/en unknown
- 2021-03-01 CN CN202110226313.9A patent/CN113451095A/en active Pending
- 2021-03-02 KR KR1020210027728A patent/KR20210119879A/en active Search and Examination
- 2021-03-02 US US17/190,178 patent/US11935729B2/en active Active
-
2023
- 2023-11-15 JP JP2023194441A patent/JP2024012608A/en active Pending
- 2023-11-15 JP JP2023194450A patent/JP2024012609A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202205513A (en) | 2022-02-01 |
CN113451095A (en) | 2021-09-28 |
US20210305025A1 (en) | 2021-09-30 |
KR20210119879A (en) | 2021-10-06 |
US11935729B2 (en) | 2024-03-19 |
JP7450427B2 (en) | 2024-03-15 |
JP2024012609A (en) | 2024-01-30 |
JP2021158134A (en) | 2021-10-07 |
JP2024012608A (en) | 2024-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202101800TA (en) | Substrate support and plasma processing apparatus | |
EP4107026A4 (en) | Substrate processing apparatus | |
SG10202004597PA (en) | Substrate processing apparatus and substrate processing method | |
SG10202011423RA (en) | Substrate processing method and plasma processing apparatus | |
SG10202008872VA (en) | Etching method, plasma processing apparatus, and substrate processing system | |
KR20220036340A (en) | Plasma processing apparatus and plasma processing method | |
EP4207305A4 (en) | Display substrate and display apparatus | |
EP4079445A4 (en) | Substrate processing method and substrate processing apparatus | |
SG10202011203SA (en) | Plasma processing method and plasma processing apparatus | |
SG10202010798QA (en) | Etching method and plasma processing apparatus | |
SG10202009297VA (en) | Substrate support and plasma processing apparatus | |
SG10202103960VA (en) | Substrate processing method and plasma processing apparatus | |
SG10202004567SA (en) | Plasma processing method and plasma processing apparatus | |
EP4307860A4 (en) | Display substrate and display apparatus | |
SG10202005364XA (en) | Plasma processing method and plasma processing apparatus | |
SG10202101193RA (en) | Substrate processing apparatus and substrate processing method | |
KR20220035845A (en) | Stage substrate processing apparatus and substrate attraction method | |
KR102377068B1 (en) | Substrate processing method and substrate processing apparatus | |
SG11202112722UA (en) | Substrate processing methods and apparatus | |
SG10202007379PA (en) | Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device | |
SG10202002354UA (en) | Substrate processing apparatus and article manufacturing method | |
GB2598936B (en) | Method and apparatus for plasma processing | |
GB2598934B (en) | Method and apparatus for plasma processing | |
TWI800259B (en) | Substrate processing method and substrate processing apparatus | |
KR20220035840A (en) | Plasma processing apparatus and plasma processing method |