Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/02—Details
  • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
  • H01J37/08—Ion sources; Ion guns
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/48—Ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
  • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/30—Electron or ion beam tubes for processing objects
  • H01J2237/317—Processing objects on a microscale
  • H01J2237/31701—Ion implantation

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Analytical Chemistry (AREA)
• High Energy & Nuclear Physics (AREA)
• Organic Chemistry (AREA)
• Metallurgy (AREA)
• Mechanical Engineering (AREA)
• Materials Engineering (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• General Physics & Mathematics (AREA)
• Toxicology (AREA)
• Health & Medical Sciences (AREA)
• Electron Sources, Ion Sources (AREA)
• Physical Vapour Deposition (AREA)
• Formation Of Insulating Films (AREA)

Applications Claiming Priority (4)

Publications (1)

Family

ID=59998279

Family Applications (2)

Family Applications Before (1)

Country Status (8)

Families Citing this family (6)

Family Cites Families (22)

• 2017
  • 2017-04-10 US US15/483,448 patent/US20170294314A1/en not_active Abandoned
  • 2017-04-10 US US15/483,522 patent/US20170292186A1/en not_active Abandoned
  • 2017-04-10 US US15/483,479 patent/US20170294289A1/en not_active Abandoned
  • 2017-04-11 KR KR1020187032524A patent/KR102443564B1/en active IP Right Grant
  • 2017-04-11 KR KR1020227031380A patent/KR20220129108A/en not_active Application Discontinuation
  • 2017-04-11 SG SG11201808852YA patent/SG11201808852YA/en unknown
  • 2017-04-11 JP JP2019503647A patent/JP6990691B2/en active Active
  • 2017-04-11 TW TW106112054A patent/TWI743105B/en active
  • 2017-04-11 CN CN201780029981.4A patent/CN109362231B/en active Active
  • 2017-04-11 EP EP17719778.7A patent/EP3443137A1/en not_active Withdrawn
  • 2017-04-11 TW TW106112052A patent/TWI724152B/en active
  • 2017-04-11 TW TW106112055A patent/TWI826349B/en active
  • 2017-04-11 WO PCT/US2017/026913 patent/WO2017180562A1/en active Application Filing
  • 2017-04-11 SG SG10202010058QA patent/SG10202010058QA/en unknown
• 2019
  • 2019-07-23 US US16/519,180 patent/US20200013621A1/en not_active Abandoned

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