SG10202009208UA - Photosensitive siloxane composition - Google Patents
Photosensitive siloxane compositionInfo
- Publication number
- SG10202009208UA SG10202009208UA SG10202009208UA SG10202009208UA SG10202009208UA SG 10202009208U A SG10202009208U A SG 10202009208UA SG 10202009208U A SG10202009208U A SG 10202009208UA SG 10202009208U A SG10202009208U A SG 10202009208UA SG 10202009208U A SG10202009208U A SG 10202009208UA
- Authority
- SG
- Singapore
- Prior art keywords
- siloxane composition
- photosensitive siloxane
- photosensitive
- composition
- siloxane
- Prior art date
Links
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
- C08K5/23—Azo-compounds
- C08K5/235—Diazo and polyazo compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C08L101/06—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
- C08L101/08—Carboxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L43/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium or a metal; Compositions of derivatives of such polymers
- C08L43/04—Homopolymers or copolymers of monomers containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
- G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Wood Science & Technology (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016062385A JP2017173741A (en) | 2016-03-25 | 2016-03-25 | Photosensitive siloxane composition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202009208UA true SG10202009208UA (en) | 2020-10-29 |
Family
ID=58413078
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807282SA SG11201807282SA (en) | 2016-03-25 | 2017-03-23 | Photosensitive siloxane composition |
SG10202009208UA SG10202009208UA (en) | 2016-03-25 | 2017-03-23 | Photosensitive siloxane composition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807282SA SG11201807282SA (en) | 2016-03-25 | 2017-03-23 | Photosensitive siloxane composition |
Country Status (7)
Country | Link |
---|---|
US (2) | US10606173B2 (en) |
JP (3) | JP2017173741A (en) |
KR (2) | KR102046782B1 (en) |
CN (2) | CN113156763A (en) |
SG (2) | SG11201807282SA (en) |
TW (2) | TWI771907B (en) |
WO (1) | WO2017162831A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018097284A1 (en) * | 2016-11-28 | 2018-05-31 | 国立大学法人 奈良先端科学技術大学院大学 | Thin film transistor substrate provided with protective film and method for producing same |
JP2018189738A (en) * | 2017-04-28 | 2018-11-29 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Positive type photosensitive siloxane composition and cured film formed by using the same |
KR20190136248A (en) * | 2018-05-30 | 2019-12-10 | 롬엔드하스전자재료코리아유한회사 | Positive-type photosensitive resin composition and cured film prepared therefrom |
KR102674721B1 (en) * | 2018-11-29 | 2024-06-14 | 듀폰스페셜티머터리얼스코리아 유한회사 | Positive-type photosensitive resin composition and cured film using same |
US11467494B2 (en) * | 2019-03-15 | 2022-10-11 | Merck Patent Gmbh | Positive type photosensitive polysiloxane composition |
JP7484710B2 (en) * | 2019-03-26 | 2024-05-16 | 東レ株式会社 | Positive-type photosensitive resin composition, cured film thereof, and optical device having the same |
JP2021021771A (en) * | 2019-07-25 | 2021-02-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Low-temperature curable negative type photosensitive composition |
WO2021028297A1 (en) * | 2019-08-09 | 2021-02-18 | Merck Patent Gmbh | Low dielectric constant siliceous film manufacturing composition and methods for producing cured film and electronic device using the same |
CN115867867A (en) * | 2020-07-06 | 2023-03-28 | 昭和电工株式会社 | Photosensitive resin composition and cured resin film thereof |
KR102618632B1 (en) * | 2020-08-26 | 2023-12-27 | 삼성에스디아이 주식회사 | Photosensitive resin composition and photosensitive resin layer using the same and color filter |
KR20230074793A (en) * | 2020-10-19 | 2023-05-31 | 가부시끼가이샤 레조낙 | Photosensitive resin composition and color filter |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2961722B2 (en) | 1991-12-11 | 1999-10-12 | ジェイエスアール株式会社 | Radiation-sensitive resin composition |
JP2868672B2 (en) * | 1992-08-31 | 1999-03-10 | 沖電気工業株式会社 | Silicone resin composition and method for producing silicate glass thin film using the same |
JP2933879B2 (en) | 1995-08-11 | 1999-08-16 | シャープ株式会社 | Transmissive liquid crystal display device and method of manufacturing the same |
KR100481601B1 (en) * | 1999-09-21 | 2005-04-08 | 주식회사 하이닉스반도체 | Photoresist composition containing photo base generator with photo acid generator |
JP3783512B2 (en) | 2000-02-29 | 2006-06-07 | Jsr株式会社 | Radiation-sensitive resin composition and interlayer insulating film formed therefrom |
JP4141625B2 (en) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | Positive resist composition and substrate provided with the resist layer |
JP2004177683A (en) * | 2002-11-27 | 2004-06-24 | Clariant (Japan) Kk | Method for forming pattern by using ultrahigh heat-resistant positive photosensitive composition |
EP2381308B1 (en) * | 2003-06-23 | 2015-07-29 | Sumitomo Bakelite Co., Ltd. | Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device |
TW200627061A (en) * | 2004-10-20 | 2006-08-01 | Mitsubishi Chem Corp | Photosensitive composition, image-forming base material, image-forming material, and image-forming method |
EP1662322B1 (en) * | 2004-11-26 | 2017-01-11 | Toray Industries, Inc. | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film |
JP4784283B2 (en) | 2004-11-26 | 2011-10-05 | 東レ株式会社 | Positive photosensitive siloxane composition, cured film formed therefrom, and device having cured film |
JP2006236839A (en) | 2005-02-25 | 2006-09-07 | Mitsubishi Electric Corp | Organic electroluminescent display device |
JP5056260B2 (en) * | 2006-12-14 | 2012-10-24 | 東レ株式会社 | Photosensitive siloxane composition, method for producing the same, cured film formed therefrom, and device having the cured film |
JP5141106B2 (en) * | 2007-06-22 | 2013-02-13 | 住友化学株式会社 | Chemically amplified positive resist composition and hydroxystyrene derivative |
WO2009028360A1 (en) * | 2007-08-24 | 2009-03-05 | Toray Industries, Inc. | Photosensitive composition, cured film formed therefrom, and device having cured film |
JP4826840B2 (en) * | 2009-01-15 | 2011-11-30 | 信越化学工業株式会社 | Pattern formation method |
US8709552B2 (en) * | 2009-01-29 | 2014-04-29 | Toray Industries, Inc. | Resin composition and display device using the same |
JP5516574B2 (en) * | 2009-03-31 | 2014-06-11 | 大日本印刷株式会社 | Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method and article using the photosensitive resin composition |
TWI437025B (en) * | 2009-08-14 | 2014-05-11 | Asahi Kasei E Materials Corp | An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof |
JP5712926B2 (en) * | 2009-09-30 | 2015-05-07 | 大日本印刷株式会社 | Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method and article using the photosensitive resin composition |
JP5413124B2 (en) * | 2009-10-22 | 2014-02-12 | Jsr株式会社 | Positive radiation-sensitive composition, interlayer insulating film and method for forming the same |
TWI516527B (en) * | 2009-12-10 | 2016-01-11 | 信越化學工業股份有限公司 | Photo-curable resin composition, pattern forming method and substrate protecting film, and film-shaped adhesive and adhesive sheet using said composition |
KR101739607B1 (en) * | 2009-12-22 | 2017-05-24 | 도레이 카부시키가이샤 | Positive photosensitive resin composition, cured film formed from same, and element having cured film |
JP2011227159A (en) * | 2010-04-16 | 2011-11-10 | Hitachi Chem Co Ltd | Photosensitive resin composition, forming method of silica based coating using the same, and device and member having silica based coating |
JP5818022B2 (en) * | 2010-05-13 | 2015-11-18 | 日産化学工業株式会社 | Photosensitive resin composition and display device |
JP5696665B2 (en) * | 2010-06-09 | 2015-04-08 | 東レ株式会社 | Photosensitive siloxane composition, cured film formed therefrom, and device having cured film |
CN103069341B (en) | 2010-08-24 | 2015-05-13 | 默克专利有限公司 | Positive photosensitive siloxane composition |
KR20120056773A (en) | 2010-11-25 | 2012-06-04 | 가부시키가이샤 아데카 | Positive photosensitive resin composition and permanent resist |
CN103988127B (en) * | 2011-12-09 | 2019-04-19 | 旭化成株式会社 | Photosensitive polymer combination, the manufacturing method of cured relief pattern, semiconductor device and display body device |
CN110095941B (en) * | 2011-12-26 | 2023-02-17 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor element |
TWI541610B (en) * | 2013-07-25 | 2016-07-11 | Chi Mei Corp | Photosensitive polysiloxane compositions and their use |
TWI518460B (en) * | 2013-08-13 | 2016-01-21 | Chi Mei Corp | Photosensitive polysiloxane compositions and their use |
US20150293449A1 (en) * | 2013-08-13 | 2015-10-15 | Chi Mei Corporation | Photosensitive polysiloxane composition and uses thereof |
TWI490653B (en) * | 2013-09-10 | 2015-07-01 | Chi Mei Corp | Positive photosensitive resin composition and method for forming patterns by using the same |
TW201518862A (en) * | 2013-09-13 | 2015-05-16 | Fujifilm Corp | Photo-sensitive resin composition, method for manufacturing cured film, cured film, liquid crystal display device and organic EL display device |
TWI521308B (en) * | 2014-03-28 | 2016-02-11 | 奇美實業股份有限公司 | Photosensitive polysiloxane composition and uses thereof |
KR20150117567A (en) * | 2014-04-10 | 2015-10-20 | 제일모직주식회사 | Positive photosensitive resin composition, photosensitive resin film, and display device using the same |
TWI524150B (en) * | 2014-06-27 | 2016-03-01 | 奇美實業股份有限公司 | Photosensitive resin composition, protective film and element having the same |
JP6318957B2 (en) * | 2014-07-31 | 2018-05-09 | Jsr株式会社 | Radiation sensitive resin composition, cured film, method for forming the same, and display element |
-
2016
- 2016-03-25 JP JP2016062385A patent/JP2017173741A/en active Pending
-
2017
- 2017-03-23 CN CN202110313361.1A patent/CN113156763A/en active Pending
- 2017-03-23 KR KR1020187031003A patent/KR102046782B1/en active IP Right Grant
- 2017-03-23 SG SG11201807282SA patent/SG11201807282SA/en unknown
- 2017-03-23 WO PCT/EP2017/057005 patent/WO2017162831A1/en active Application Filing
- 2017-03-23 CN CN201780019167.4A patent/CN108884321B/en active Active
- 2017-03-23 JP JP2018533762A patent/JP6538284B2/en active Active
- 2017-03-23 KR KR1020197018853A patent/KR102214630B1/en active IP Right Grant
- 2017-03-23 SG SG10202009208UA patent/SG10202009208UA/en unknown
- 2017-03-23 US US16/087,713 patent/US10606173B2/en active Active
- 2017-03-24 TW TW110104966A patent/TWI771907B/en active
- 2017-03-24 TW TW106109867A patent/TWI734756B/en active
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2019
- 2019-04-11 JP JP2019075471A patent/JP6903705B2/en active Active
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CN108884321B (en) | 2021-09-14 |
TW202122483A (en) | 2021-06-16 |
KR20180120784A (en) | 2018-11-06 |
TW201802594A (en) | 2018-01-16 |
US20200201179A1 (en) | 2020-06-25 |
WO2017162831A1 (en) | 2017-09-28 |
JP2019159330A (en) | 2019-09-19 |
US20190077961A1 (en) | 2019-03-14 |
SG11201807282SA (en) | 2018-10-30 |
TWI771907B (en) | 2022-07-21 |
KR20190080978A (en) | 2019-07-08 |
US10606173B2 (en) | 2020-03-31 |
JP2017173741A (en) | 2017-09-28 |
CN113156763A (en) | 2021-07-23 |
TWI734756B (en) | 2021-08-01 |
JP2019504909A (en) | 2019-02-21 |
KR102046782B1 (en) | 2019-11-20 |
JP6903705B2 (en) | 2021-07-14 |
JP6538284B2 (en) | 2019-07-03 |
KR102214630B1 (en) | 2021-02-15 |
CN108884321A (en) | 2018-11-23 |
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