SG10202007254WA - Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program - Google Patents
Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing programInfo
- Publication number
- SG10202007254WA SG10202007254WA SG10202007254WA SG10202007254WA SG10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate processing
- semiconductor device
- manufacturing semiconductor
- processing apparatus
- processing program
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019144877 | 2019-08-06 | ||
JP2020117977A JP7055173B2 (en) | 2019-08-06 | 2020-07-08 | Substrate processing equipment, semiconductor device manufacturing method and substrate processing program |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202007254WA true SG10202007254WA (en) | 2021-03-30 |
Family
ID=74662512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202007254WA SG10202007254WA (en) | 2019-08-06 | 2020-07-29 | Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7055173B2 (en) |
KR (1) | KR20210018075A (en) |
SG (1) | SG10202007254WA (en) |
TW (1) | TWI797469B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7357660B2 (en) * | 2021-07-09 | 2023-10-06 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor device manufacturing method and program |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3355238B2 (en) * | 1993-11-16 | 2002-12-09 | 株式会社日立国際電気 | Semiconductor film forming equipment |
JP3567070B2 (en) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
US5948169A (en) * | 1998-03-11 | 1999-09-07 | Vanguard International Semiconductor Corporation | Apparatus for preventing particle deposition in a capacitance diaphragm gauge |
JP4521889B2 (en) * | 1998-04-23 | 2010-08-11 | 株式会社日立国際電気 | Substrate processing equipment |
JP2001257197A (en) * | 2000-03-10 | 2001-09-21 | Hitachi Ltd | Manufacturing method and manufacturing device for semiconductor device |
JP3872952B2 (en) * | 2000-10-27 | 2007-01-24 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
JP4244674B2 (en) * | 2002-11-08 | 2009-03-25 | 東京エレクトロン株式会社 | Processing apparatus and processing method |
JP4675388B2 (en) * | 2008-03-06 | 2011-04-20 | 東京エレクトロン株式会社 | Processing device for workpiece |
JP2012054393A (en) * | 2010-09-01 | 2012-03-15 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and semiconductor manufacturing method |
CN104520975B (en) * | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | The manufacturing method of substrate processing device and semiconductor devices |
JPWO2014157071A1 (en) * | 2013-03-25 | 2017-02-16 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method |
JP2015183985A (en) * | 2014-03-26 | 2015-10-22 | 株式会社Screenホールディングス | substrate processing apparatus and substrate processing method |
JP6910798B2 (en) * | 2016-03-15 | 2021-07-28 | 株式会社Screenホールディングス | Vacuum drying method and vacuum drying device |
JP2019036654A (en) * | 2017-08-18 | 2019-03-07 | 株式会社Screenホールディングス | Decompression drying device, substrate processing apparatus, and decompression drying method |
JP6613276B2 (en) * | 2017-09-22 | 2019-11-27 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, program, recording medium, and substrate processing apparatus |
JP6808690B2 (en) * | 2018-07-25 | 2021-01-06 | 株式会社Screenホールディングス | Vacuum drying device, substrate processing device and vacuum drying method |
-
2020
- 2020-07-08 JP JP2020117977A patent/JP7055173B2/en active Active
- 2020-07-29 SG SG10202007254WA patent/SG10202007254WA/en unknown
- 2020-07-29 KR KR1020200094132A patent/KR20210018075A/en active Application Filing
- 2020-08-04 TW TW109126304A patent/TWI797469B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2021027339A (en) | 2021-02-22 |
TW202111251A (en) | 2021-03-16 |
TWI797469B (en) | 2023-04-01 |
JP7055173B2 (en) | 2022-04-15 |
KR20210018075A (en) | 2021-02-17 |
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