SG10202002277WA - Pulsed, bidirectional radio frequency source/load - Google Patents
Pulsed, bidirectional radio frequency source/loadInfo
- Publication number
- SG10202002277WA SG10202002277WA SG10202002277WA SG10202002277WA SG10202002277WA SG 10202002277W A SG10202002277W A SG 10202002277WA SG 10202002277W A SG10202002277W A SG 10202002277WA SG 10202002277W A SG10202002277W A SG 10202002277WA SG 10202002277W A SG10202002277W A SG 10202002277WA
- Authority
- SG
- Singapore
- Prior art keywords
- pulsed
- load
- radio frequency
- frequency source
- bidirectional radio
- Prior art date
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Orthopedics, Nursing, And Contraception (AREA)
- Financial Or Insurance-Related Operations Such As Payment And Settlement (AREA)
- Prostheses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762504197P | 2017-05-10 | 2017-05-10 | |
| US15/974,947 US10546724B2 (en) | 2017-05-10 | 2018-05-09 | Pulsed, bidirectional radio frequency source/load |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202002277WA true SG10202002277WA (en) | 2020-04-29 |
Family
ID=64097974
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201909631R SG11201909631RA (en) | 2017-05-10 | 2018-05-10 | Pulsed, bidirectional radio frequency source/load |
| SG10202002277WA SG10202002277WA (en) | 2017-05-10 | 2018-05-10 | Pulsed, bidirectional radio frequency source/load |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201909631R SG11201909631RA (en) | 2017-05-10 | 2018-05-10 | Pulsed, bidirectional radio frequency source/load |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10546724B2 (en) |
| EP (1) | EP3622552B1 (en) |
| JP (2) | JP6911152B2 (en) |
| KR (2) | KR102372558B1 (en) |
| CN (2) | CN110741458B (en) |
| SG (2) | SG11201909631RA (en) |
| TW (2) | TWI689968B (en) |
| WO (1) | WO2018209085A1 (en) |
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| CN109148250B (en) * | 2017-06-15 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Impedance matching device and impedance matching method |
| JP6842443B2 (en) * | 2018-06-22 | 2021-03-17 | 東京エレクトロン株式会社 | Plasma processing equipment and method of generating plasma |
| US10991550B2 (en) * | 2018-09-04 | 2021-04-27 | Lam Research Corporation | Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system |
| CN109273341B (en) * | 2018-10-18 | 2021-01-08 | 北京北方华创微电子装备有限公司 | Plasma process method |
| KR20200126177A (en) * | 2019-04-29 | 2020-11-06 | 삼성전자주식회사 | Apparatus for monitoring RF(Radio Frequency) power, and PE(Plasma Enhanced) system comprising the same apparatus |
| GB2584146A (en) * | 2019-05-23 | 2020-11-25 | Comet Ag | Radio frequency generator |
| US11721526B2 (en) | 2019-05-31 | 2023-08-08 | Mks Instruments, Inc. | System and method of power generation with phase linked solid-state generator modules |
| US11177115B2 (en) * | 2019-06-03 | 2021-11-16 | Applied Materials, Inc. | Dual-level pulse tuning |
| US11158488B2 (en) * | 2019-06-26 | 2021-10-26 | Mks Instruments, Inc. | High speed synchronization of plasma source/bias power delivery |
| US11315757B2 (en) | 2019-08-13 | 2022-04-26 | Mks Instruments, Inc. | Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications |
| JP7257918B2 (en) * | 2019-08-29 | 2023-04-14 | 東京エレクトロン株式会社 | Plasma processing system and plasma ignition support method |
| KR102077512B1 (en) * | 2019-10-18 | 2020-04-07 | (주)에이에스엔지니어링 | A appratus for supplying the radiofrequency power by multi-channel |
| US11232931B2 (en) | 2019-10-21 | 2022-01-25 | Mks Instruments, Inc. | Intermodulation distortion mitigation using electronic variable capacitor |
| CN113539773B (en) * | 2020-04-16 | 2024-07-02 | 新动力等离子体株式会社 | High frequency generator with dual output and driving method thereof |
| US11536755B2 (en) | 2020-05-29 | 2022-12-27 | Mks Instruments, Inc. | System and method for arc detection using a bias RF generator signal |
| JP2023530125A (en) * | 2020-06-15 | 2023-07-13 | ラム リサーチ コーポレーション | Pulsing frequency and duty cycle control of RF signal parameters |
| US11410832B2 (en) * | 2020-06-26 | 2022-08-09 | Tokyo Electron Limited | RF measurement system and method |
| WO2022072234A1 (en) * | 2020-09-29 | 2022-04-07 | Lam Research Corporation | Synchronization of rf generators |
| WO2022093551A1 (en) * | 2020-10-26 | 2022-05-05 | Lam Research Corporation | Synchronization of rf pulsing schemes and of sensor data collection |
| US11527384B2 (en) | 2020-11-24 | 2022-12-13 | Mks Instruments, Inc. | Apparatus and tuning method for mitigating RF load impedance variations due to periodic disturbances |
| US11545943B2 (en) | 2020-12-04 | 2023-01-03 | Mks Instruments, Inc. | Switched capacitor modulator |
| CN112437533A (en) * | 2020-12-07 | 2021-03-02 | 大连理工大学 | Power supply system and method for improving plasma uniformity |
| JP7511501B2 (en) * | 2021-02-10 | 2024-07-05 | 東京エレクトロン株式会社 | Plasma processing apparatus and monitoring device |
| TW202243549A (en) * | 2021-04-22 | 2022-11-01 | 大陸商北京屹唐半導體科技股份有限公司 | Dual frequency matching circuit for inductively coupled plasma (icp) loads |
| US11715624B2 (en) | 2021-08-09 | 2023-08-01 | Mks Instruments, Inc. | Adaptive pulse shaping with post match sensor |
| US11823869B2 (en) | 2021-10-15 | 2023-11-21 | Mks Instruments, Inc. | Impedance matching in a RF power generation system |
| US20230223235A1 (en) * | 2022-01-12 | 2023-07-13 | Mks Instruments, Inc. | Pulse And Bias Synchronization Methods And Systems |
| US11996274B2 (en) | 2022-04-07 | 2024-05-28 | Mks Instruments, Inc. | Real-time, non-invasive IEDF plasma sensor |
| US20230361746A1 (en) * | 2022-05-05 | 2023-11-09 | Applied Materials, Inc. | Impedance tuning utility of vector space defined by transmission line quantities |
| US20240055228A1 (en) * | 2022-08-10 | 2024-02-15 | Mks Instruments, Inc. | Plasma Process Control of Multi-Electrode Systems Equipped with Ion Energy Sensors |
| WO2024043065A1 (en) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | Plasma treatment device, rf system, and rf control method |
| US11996269B2 (en) | 2022-09-08 | 2024-05-28 | Mks Instruments, Inc. | Extremum seeking control apparatuses with online parameter adjustment and methods |
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-
2018
- 2018-05-09 US US15/974,947 patent/US10546724B2/en active Active
- 2018-05-10 SG SG11201909631R patent/SG11201909631RA/en unknown
- 2018-05-10 EP EP18798374.7A patent/EP3622552B1/en active Active
- 2018-05-10 TW TW107115985A patent/TWI689968B/en active
- 2018-05-10 JP JP2019561729A patent/JP6911152B2/en active Active
- 2018-05-10 SG SG10202002277WA patent/SG10202002277WA/en unknown
- 2018-05-10 CN CN201880030682.7A patent/CN110741458B/en active Active
- 2018-05-10 CN CN202210824403.2A patent/CN115172130A/en active Pending
- 2018-05-10 KR KR1020197036408A patent/KR102372558B1/en active IP Right Grant
- 2018-05-10 WO PCT/US2018/032067 patent/WO2018209085A1/en unknown
- 2018-05-10 KR KR1020227007246A patent/KR102479464B1/en active IP Right Grant
- 2018-05-10 TW TW109107284A patent/TWI741519B/en active
-
2019
- 2019-12-11 US US16/710,412 patent/US10930470B2/en active Active
-
2021
- 2021-07-07 JP JP2021112803A patent/JP7171838B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3622552B1 (en) | 2023-07-05 |
| SG11201909631RA (en) | 2019-11-28 |
| JP7171838B2 (en) | 2022-11-15 |
| CN115172130A (en) | 2022-10-11 |
| EP3622552A1 (en) | 2020-03-18 |
| TW202029271A (en) | 2020-08-01 |
| US20200144025A1 (en) | 2020-05-07 |
| KR102479464B1 (en) | 2022-12-21 |
| KR20190140488A (en) | 2019-12-19 |
| KR20220032650A (en) | 2022-03-15 |
| TW201907440A (en) | 2019-02-16 |
| US10930470B2 (en) | 2021-02-23 |
| CN110741458A (en) | 2020-01-31 |
| TWI741519B (en) | 2021-10-01 |
| WO2018209085A1 (en) | 2018-11-15 |
| KR102372558B1 (en) | 2022-03-10 |
| CN110741458B (en) | 2022-07-29 |
| JP2021182548A (en) | 2021-11-25 |
| JP6911152B2 (en) | 2021-07-28 |
| US10546724B2 (en) | 2020-01-28 |
| US20180330921A1 (en) | 2018-11-15 |
| JP2020522837A (en) | 2020-07-30 |
| TWI689968B (en) | 2020-04-01 |
| EP3622552A4 (en) | 2021-01-20 |
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