SG10201913021PA - Chemical vapor deposition process to build 3d foam-like structures - Google Patents
Chemical vapor deposition process to build 3d foam-like structuresInfo
- Publication number
- SG10201913021PA SG10201913021PA SG10201913021PA SG10201913021PA SG10201913021PA SG 10201913021P A SG10201913021P A SG 10201913021PA SG 10201913021P A SG10201913021P A SG 10201913021PA SG 10201913021P A SG10201913021P A SG 10201913021PA SG 10201913021P A SG10201913021P A SG 10201913021PA
- Authority
- SG
- Singapore
- Prior art keywords
- build
- foam
- structures
- vapor deposition
- chemical vapor
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/14—Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium
- C01B35/146—Compounds containing boron and nitrogen, e.g. borazoles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201601834U | 2016-03-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201913021PA true SG10201913021PA (en) | 2020-02-27 |
Family
ID=59790704
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201913021PA SG10201913021PA (en) | 2016-03-09 | 2017-03-09 | Chemical vapor deposition process to build 3d foam-like structures |
SG11201807113QA SG11201807113QA (en) | 2016-03-09 | 2017-03-09 | Chemical vapor deposition process to build 3d foam-like structures |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807113QA SG11201807113QA (en) | 2016-03-09 | 2017-03-09 | Chemical vapor deposition process to build 3d foam-like structures |
Country Status (5)
Country | Link |
---|---|
US (1) | US11104989B2 (en) |
EP (1) | EP3426818A4 (en) |
CN (1) | CN108699684B (en) |
SG (2) | SG10201913021PA (en) |
WO (1) | WO2017155468A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11043338B2 (en) * | 2017-11-09 | 2021-06-22 | Korea Research Institute Of Chemical Technology | Manufacturing method of porous composite electrode and organic removal method of porous composite electrode |
CN109951903B (en) * | 2019-03-26 | 2021-06-04 | 深圳市聚威新材科技有限公司 | Nano microcrystalline lattice phase separation electrothermal material and preparation method thereof |
CN110282617B (en) * | 2019-07-26 | 2021-01-29 | 北京石墨烯研究院 | Graphene powder and preparation method thereof |
CN113046720B (en) * | 2021-03-10 | 2022-08-23 | 江西理工大学 | Nd-graphene composite material and preparation method and application thereof |
CN114931866B (en) * | 2022-03-15 | 2023-04-14 | 电子科技大学 | Preparation method of porous polymer material filtering membrane |
CN116425553A (en) * | 2023-02-10 | 2023-07-14 | 浙江理工大学 | Preparation method for preparing heat-insulating boron nitride foam by in-situ vapor deposition |
CN117286364B (en) * | 2023-11-24 | 2024-04-12 | 中铝科学技术研究院有限公司 | Graphene reinforced metal matrix composite material with three-dimensional network structure and preparation method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102126709B (en) * | 2010-01-20 | 2013-04-03 | 中国科学院金属研究所 | Preparation method of boron nitride one-dimensional nanostructure macroscopic rope |
US10005672B2 (en) | 2010-04-14 | 2018-06-26 | Baker Hughes, A Ge Company, Llc | Method of forming particles comprising carbon and articles therefrom |
IN2010CH02995A (en) * | 2010-12-11 | 2015-06-19 | Naga Prasad | |
CN102674321B (en) * | 2011-03-10 | 2015-02-25 | 中国科学院金属研究所 | Graphene foam with three dimensional fully connected network and macroscopic quantity preparation method thereof |
CN103232027B (en) * | 2013-04-22 | 2015-05-20 | 南京航空航天大学 | Three-dimensional boron nitride foam and preparation method thereof |
CN103213980B (en) | 2013-05-13 | 2015-10-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | The preparation method of three-dimensional grapheme or its compound system |
US9611146B2 (en) | 2013-07-01 | 2017-04-04 | Lawrence Livermore National Security, Llc | Crystalline boron nitride aerogels |
GB201316472D0 (en) * | 2013-09-17 | 2013-10-30 | Cambridge Nanosystems Ltd | Injection system for catalyst control |
CN104562195B (en) * | 2013-10-21 | 2017-06-06 | 中国科学院上海微***与信息技术研究所 | The growing method of Graphene |
US9505624B2 (en) * | 2014-02-18 | 2016-11-29 | Corning Incorporated | Metal-free CVD coating of graphene on glass and other dielectric substrates |
CN104030282B (en) * | 2014-06-25 | 2016-03-09 | 无锡格菲电子薄膜科技有限公司 | Organometallic compound is utilized to grow the method for number of plies controllable grapheme |
GB201413701D0 (en) | 2014-08-01 | 2014-09-17 | Isis Innovation | Process |
CN104807861B (en) | 2015-04-09 | 2017-05-24 | 山东师范大学 | Preparation method of spongy graphene-based stretchable gas sensor |
-
2017
- 2017-03-09 WO PCT/SG2017/050113 patent/WO2017155468A1/en active Application Filing
- 2017-03-09 US US16/081,653 patent/US11104989B2/en active Active
- 2017-03-09 EP EP17763669.3A patent/EP3426818A4/en not_active Withdrawn
- 2017-03-09 SG SG10201913021PA patent/SG10201913021PA/en unknown
- 2017-03-09 CN CN201780015454.8A patent/CN108699684B/en not_active Expired - Fee Related
- 2017-03-09 SG SG11201807113QA patent/SG11201807113QA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20190093217A1 (en) | 2019-03-28 |
SG11201807113QA (en) | 2018-09-27 |
CN108699684A (en) | 2018-10-23 |
EP3426818A4 (en) | 2019-11-13 |
CN108699684B (en) | 2021-08-24 |
WO2017155468A1 (en) | 2017-09-14 |
US11104989B2 (en) | 2021-08-31 |
EP3426818A1 (en) | 2019-01-16 |
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