SG10201909034YA - Diamond substrate producing method - Google Patents

Diamond substrate producing method

Info

Publication number
SG10201909034YA
SG10201909034YA SG10201909034YA SG10201909034YA SG10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA
Authority
SG
Singapore
Prior art keywords
producing method
diamond substrate
substrate producing
diamond
substrate
Prior art date
Application number
SG10201909034YA
Inventor
Hirata Kazuya
Nomoto Asahi
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201909034YA publication Critical patent/SG10201909034YA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/55Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23DPLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D61/00Tools for sawing machines or sawing devices; Clamping devices for these tools
    • B23D61/006Oscillating saw blades
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42Bombardment with radiation
    • H01L21/423Bombardment with radiation with high-energy radiation
    • H01L21/428Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/02Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
    • B28D1/12Saw-blades or saw-discs specially adapted for working stone
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02376Carbon, e.g. diamond-like carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
SG10201909034YA 2018-09-28 2019-09-27 Diamond substrate producing method SG10201909034YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018183661A JP7327920B2 (en) 2018-09-28 2018-09-28 Diamond substrate production method

Publications (1)

Publication Number Publication Date
SG10201909034YA true SG10201909034YA (en) 2020-04-29

Family

ID=69781241

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201909034YA SG10201909034YA (en) 2018-09-28 2019-09-27 Diamond substrate producing method

Country Status (8)

Country Link
US (1) US10950462B2 (en)
JP (1) JP7327920B2 (en)
KR (1) KR102629100B1 (en)
CN (1) CN110961803B (en)
DE (1) DE102019214897A1 (en)
MY (1) MY192752A (en)
SG (1) SG10201909034YA (en)
TW (1) TWI812785B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024006433A (en) 2022-07-01 2024-01-17 株式会社ディスコ Method for manufacturing diamond substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890736A (en) * 1981-11-25 1983-05-30 Toshiba Corp Sapphire substrate for semiconductor device
KR100641365B1 (en) * 2005-09-12 2006-11-01 삼성전자주식회사 Mos transistors having an optimized channel plane orientation, semiconductor devices including the same and methods of fabricating the same
JP2005277136A (en) * 2004-03-25 2005-10-06 Sharp Corp Method and apparatus of manufacturing substrate
JP5273635B2 (en) 2006-08-25 2013-08-28 独立行政法人産業技術総合研究所 High-efficiency indirect transition type semiconductor ultraviolet light-emitting device
JP5419101B2 (en) 2008-07-01 2014-02-19 独立行政法人産業技術総合研究所 Diamond semiconductor device and manufacturing method thereof
RU2469433C1 (en) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions)
EP2817819A4 (en) * 2012-02-26 2015-09-02 Solexel Inc Systems and methods for laser splitting and device layer transfer
CN106661758A (en) * 2014-08-08 2017-05-10 住友电气工业株式会社 Method for manufacturing diamond, diamond, diamond composite substrate, diamond bonded substrate, and tool
JP6506520B2 (en) * 2014-09-16 2019-04-24 株式会社ディスコ SiC slicing method
EP3395489A1 (en) * 2014-11-27 2018-10-31 Siltectra GmbH Solid body division by conversion of substances
JP6358940B2 (en) * 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6391471B2 (en) * 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
US10304739B2 (en) 2015-01-16 2019-05-28 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate
JP6604891B2 (en) * 2016-04-06 2019-11-13 株式会社ディスコ Wafer generation method
JP6246444B1 (en) 2016-05-17 2017-12-13 エルシード株式会社 Cutting method of material to be processed
JP6723877B2 (en) * 2016-08-29 2020-07-15 株式会社ディスコ Wafer generation method
JP6858586B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
JP6959073B2 (en) * 2017-08-30 2021-11-02 株式会社ディスコ Laser processing equipment
US10388526B1 (en) * 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11309191B2 (en) * 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density

Also Published As

Publication number Publication date
JP2020050563A (en) 2020-04-02
TWI812785B (en) 2023-08-21
JP7327920B2 (en) 2023-08-16
US10950462B2 (en) 2021-03-16
TW202013473A (en) 2020-04-01
CN110961803B (en) 2022-09-30
KR102629100B1 (en) 2024-01-24
KR20200036731A (en) 2020-04-07
US20200105543A1 (en) 2020-04-02
CN110961803A (en) 2020-04-07
DE102019214897A1 (en) 2020-04-02
MY192752A (en) 2022-09-06

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