SG10201909034YA - Diamond substrate producing method - Google Patents
Diamond substrate producing methodInfo
- Publication number
- SG10201909034YA SG10201909034YA SG10201909034YA SG10201909034YA SG10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- diamond substrate
- substrate producing
- diamond
- substrate
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/55—Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D61/00—Tools for sawing machines or sawing devices; Clamping devices for these tools
- B23D61/006—Oscillating saw blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/12—Saw-blades or saw-discs specially adapted for working stone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mining & Mineral Resources (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Carbon And Carbon Compounds (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018183661A JP7327920B2 (en) | 2018-09-28 | 2018-09-28 | Diamond substrate production method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201909034YA true SG10201909034YA (en) | 2020-04-29 |
Family
ID=69781241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201909034YA SG10201909034YA (en) | 2018-09-28 | 2019-09-27 | Diamond substrate producing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10950462B2 (en) |
JP (1) | JP7327920B2 (en) |
KR (1) | KR102629100B1 (en) |
CN (1) | CN110961803B (en) |
DE (1) | DE102019214897A1 (en) |
MY (1) | MY192752A (en) |
SG (1) | SG10201909034YA (en) |
TW (1) | TWI812785B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2024006433A (en) | 2022-07-01 | 2024-01-17 | 株式会社ディスコ | Method for manufacturing diamond substrate |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890736A (en) * | 1981-11-25 | 1983-05-30 | Toshiba Corp | Sapphire substrate for semiconductor device |
KR100641365B1 (en) * | 2005-09-12 | 2006-11-01 | 삼성전자주식회사 | Mos transistors having an optimized channel plane orientation, semiconductor devices including the same and methods of fabricating the same |
JP2005277136A (en) * | 2004-03-25 | 2005-10-06 | Sharp Corp | Method and apparatus of manufacturing substrate |
JP5273635B2 (en) | 2006-08-25 | 2013-08-28 | 独立行政法人産業技術総合研究所 | High-efficiency indirect transition type semiconductor ultraviolet light-emitting device |
JP5419101B2 (en) | 2008-07-01 | 2014-02-19 | 独立行政法人産業技術総合研究所 | Diamond semiconductor device and manufacturing method thereof |
RU2469433C1 (en) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions) |
EP2817819A4 (en) * | 2012-02-26 | 2015-09-02 | Solexel Inc | Systems and methods for laser splitting and device layer transfer |
CN106661758A (en) * | 2014-08-08 | 2017-05-10 | 住友电气工业株式会社 | Method for manufacturing diamond, diamond, diamond composite substrate, diamond bonded substrate, and tool |
JP6506520B2 (en) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiC slicing method |
EP3395489A1 (en) * | 2014-11-27 | 2018-10-31 | Siltectra GmbH | Solid body division by conversion of substances |
JP6358940B2 (en) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP6391471B2 (en) * | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | Wafer generation method |
US10304739B2 (en) | 2015-01-16 | 2019-05-28 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate |
JP6604891B2 (en) * | 2016-04-06 | 2019-11-13 | 株式会社ディスコ | Wafer generation method |
JP6246444B1 (en) | 2016-05-17 | 2017-12-13 | エルシード株式会社 | Cutting method of material to be processed |
JP6723877B2 (en) * | 2016-08-29 | 2020-07-15 | 株式会社ディスコ | Wafer generation method |
JP6858586B2 (en) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | Wafer generation method |
JP6959073B2 (en) * | 2017-08-30 | 2021-11-02 | 株式会社ディスコ | Laser processing equipment |
US10388526B1 (en) * | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US11309191B2 (en) * | 2018-08-07 | 2022-04-19 | Siltectra Gmbh | Method for modifying substrates based on crystal lattice dislocation density |
-
2018
- 2018-09-28 JP JP2018183661A patent/JP7327920B2/en active Active
-
2019
- 2019-08-22 KR KR1020190103325A patent/KR102629100B1/en active IP Right Grant
- 2019-09-11 MY MYPI2019005250A patent/MY192752A/en unknown
- 2019-09-16 CN CN201910869124.6A patent/CN110961803B/en active Active
- 2019-09-25 TW TW108134537A patent/TWI812785B/en active
- 2019-09-26 US US16/583,776 patent/US10950462B2/en active Active
- 2019-09-27 DE DE102019214897.2A patent/DE102019214897A1/en active Pending
- 2019-09-27 SG SG10201909034YA patent/SG10201909034YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2020050563A (en) | 2020-04-02 |
TWI812785B (en) | 2023-08-21 |
JP7327920B2 (en) | 2023-08-16 |
US10950462B2 (en) | 2021-03-16 |
TW202013473A (en) | 2020-04-01 |
CN110961803B (en) | 2022-09-30 |
KR102629100B1 (en) | 2024-01-24 |
KR20200036731A (en) | 2020-04-07 |
US20200105543A1 (en) | 2020-04-02 |
CN110961803A (en) | 2020-04-07 |
DE102019214897A1 (en) | 2020-04-02 |
MY192752A (en) | 2022-09-06 |
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