SG10201710671TA - Photomask Blank, and Preparation Method Thereof - Google Patents

Photomask Blank, and Preparation Method Thereof

Info

Publication number
SG10201710671TA
SG10201710671TA SG10201710671TA SG10201710671TA SG10201710671TA SG 10201710671T A SG10201710671T A SG 10201710671TA SG 10201710671T A SG10201710671T A SG 10201710671TA SG 10201710671T A SG10201710671T A SG 10201710671TA SG 10201710671T A SG10201710671T A SG 10201710671TA
Authority
SG
Singapore
Prior art keywords
film
intension
photomask blank
preparation
ions derived
Prior art date
Application number
SG10201710671TA
Inventor
Takuro Kosaka
Yukio Inazuki
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201710671TA publication Critical patent/SG10201710671TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Photomask Blank, and Preparation Method Thereof A photomask blank including a transparent substrate, and at least one film (A) 5 containing chromium and free of silicon and at least one film (B) containing silicon, and oxygen or oxygen and nitrogen, and free of a transition metal that are contacted to each other In the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), an intension of secondary ions derived from Cr 2O5 is lower than an intension of secondary 10 ions derived from Cr, at a position located at the interface or its vicinity of the film (A) and film (B) and having a maximum intensity of secondary ions derived from SiCrO 5. [FIG.2]
SG10201710671TA 2016-12-26 2017-12-21 Photomask Blank, and Preparation Method Thereof SG10201710671TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016250740 2016-12-26

Publications (1)

Publication Number Publication Date
SG10201710671TA true SG10201710671TA (en) 2018-07-30

Family

ID=60673411

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201710671TA SG10201710671TA (en) 2016-12-26 2017-12-21 Photomask Blank, and Preparation Method Thereof

Country Status (7)

Country Link
US (1) US10656516B2 (en)
EP (1) EP3339953B1 (en)
JP (1) JP6900873B2 (en)
KR (1) KR102267306B1 (en)
CN (1) CN108241250B (en)
SG (1) SG10201710671TA (en)
TW (1) TWI738950B (en)

Families Citing this family (9)

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JP6753375B2 (en) * 2017-07-28 2020-09-09 信越化学工業株式会社 Photomask blank, photomask blank manufacturing method and photomask manufacturing method
KR102169572B1 (en) * 2018-12-26 2020-10-23 주식회사 에스앤에스텍 Blankmask and Photomask
WO2020138855A1 (en) * 2018-12-26 2020-07-02 주식회사 에스앤에스텍 Blank mask and photomask
KR20210118885A (en) * 2019-03-07 2021-10-01 호야 가부시키가이샤 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP7313166B2 (en) * 2019-03-18 2023-07-24 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7298556B2 (en) * 2020-06-30 2023-06-27 信越化学工業株式会社 Photomask blank manufacturing method
JP7280296B2 (en) * 2021-02-03 2023-05-23 アルバック成膜株式会社 Mask blanks and photomasks
JP7280297B2 (en) * 2021-02-03 2023-05-23 アルバック成膜株式会社 Mask blanks and photomasks
JP2022118976A (en) * 2021-02-03 2022-08-16 アルバック成膜株式会社 Mask blank and photomask

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JPS5517152A (en) * 1978-07-25 1980-02-06 Fujitsu Ltd Photo mask
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
US5674647A (en) 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
JP3974319B2 (en) * 2000-03-30 2007-09-12 株式会社東芝 Etching method
US7329474B2 (en) * 2003-03-31 2008-02-12 Shin-Estu Chemical Co., Ltd. Photomask blank, photomask, and method of manufacture
KR20070096749A (en) * 2006-06-20 2007-10-02 주식회사 에스앤에스텍 Blankmask and manufacturing method thereof
JP5114367B2 (en) * 2008-11-21 2013-01-09 Ｈｏｙａ株式会社 Photomask manufacturing method and pattern transfer method using the photomask
JP4797114B2 (en) * 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 Method for manufacturing transfer mask and method for manufacturing semiconductor device
KR20130132787A (en) * 2010-09-30 2013-12-05 호야 가부시키가이샤 Mask blank, method for producing same, and transfer mask
KR101679721B1 (en) * 2010-12-13 2016-11-28 삼성전자주식회사 A photomask and methods of manufacturing the photomask
JP5592299B2 (en) * 2011-03-24 2014-09-17 Ｈｏｙａ株式会社 Mask blank defect analysis method
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
WO2013136882A1 (en) * 2012-03-14 2013-09-19 Hoya株式会社 Mask blank, and method for producing mask for transcription use
KR102166222B1 (en) * 2013-01-15 2020-10-15 호야 가부시키가이샤 Mask blank, phase-shift mask, and method for manufacturing mask blank and phase-shift mask
JP6005530B2 (en) * 2013-01-15 2016-10-12 Hoya株式会社 Mask blank, phase shift mask and manufacturing method thereof
JP6234898B2 (en) * 2013-09-25 2017-11-22 信越化学工業株式会社 Photomask blank manufacturing method
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Also Published As

Publication number Publication date
CN108241250A (en) 2018-07-03
KR20180075400A (en) 2018-07-04
US20180180985A1 (en) 2018-06-28
US10656516B2 (en) 2020-05-19
EP3339953B1 (en) 2022-08-31
JP2018106144A (en) 2018-07-05
EP3339953A1 (en) 2018-06-27
KR102267306B1 (en) 2021-06-21
CN108241250B (en) 2023-11-21
TWI738950B (en) 2021-09-11
JP6900873B2 (en) 2021-07-07
TW201839498A (en) 2018-11-01

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