SG10201703432XA - Annular baffle - Google Patents
Annular baffleInfo
- Publication number
- SG10201703432XA SG10201703432XA SG10201703432XA SG10201703432XA SG10201703432XA SG 10201703432X A SG10201703432X A SG 10201703432XA SG 10201703432X A SG10201703432X A SG 10201703432XA SG 10201703432X A SG10201703432X A SG 10201703432XA SG 10201703432X A SG10201703432X A SG 10201703432XA
- Authority
- SG
- Singapore
- Prior art keywords
- annular baffle
- baffle
- annular
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15D—FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENCING THE FLOW OF GASES OR LIQUIDS
- F15D1/00—Influencing flow of fluids
- F15D1/0005—Baffle plates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Fluid Mechanics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91458307P | 2007-04-27 | 2007-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201703432XA true SG10201703432XA (en) | 2017-06-29 |
Family
ID=39926076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703432XA SG10201703432XA (en) | 2007-04-27 | 2008-04-24 | Annular baffle |
Country Status (7)
Country | Link |
---|---|
US (3) | US8647438B2 (en) |
JP (3) | JP6097471B2 (en) |
KR (1) | KR101480738B1 (en) |
CN (1) | CN101663421A (en) |
SG (1) | SG10201703432XA (en) |
TW (2) | TWI527116B (en) |
WO (1) | WO2008134446A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8157951B2 (en) * | 2005-10-11 | 2012-04-17 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US8034180B2 (en) | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US8647438B2 (en) | 2007-04-27 | 2014-02-11 | Applied Materials, Inc. | Annular baffle |
KR102045942B1 (en) | 2011-05-31 | 2019-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for dry etch with edge, side and back protection |
CN102395243A (en) * | 2011-10-19 | 2012-03-28 | 中微半导体设备(上海)有限公司 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
CN103796413B (en) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
US9095038B2 (en) | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
CN102355792B (en) * | 2011-10-19 | 2016-04-06 | 中微半导体设备(上海)有限公司 | Improve the inductively coupled plasma device of plasma uniformity and efficiency |
CN103874314B (en) * | 2012-12-17 | 2016-10-05 | 中微半导体设备(上海)有限公司 | A kind of inductively coupled plasma device |
WO2016116889A1 (en) | 2015-01-23 | 2016-07-28 | Gholamreza Chaji | Selective micro device transfer to receiver substrate |
US10700120B2 (en) | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
KR20220027091A (en) * | 2019-06-07 | 2022-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | seamless electrical conduit |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59132623A (en) | 1983-01-20 | 1984-07-30 | Ulvac Corp | Electrode for dry etching |
JPS6293939A (en) | 1985-10-21 | 1987-04-30 | Hitachi Ltd | Stand for heating sample for vacuum device |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5356476A (en) * | 1992-06-15 | 1994-10-18 | Materials Research Corporation | Semiconductor wafer processing method and apparatus with heat and gas flow control |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
JP2814370B2 (en) * | 1995-06-18 | 1998-10-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
US6133152A (en) * | 1997-05-16 | 2000-10-17 | Applied Materials, Inc. | Co-rotating edge ring extension for use in a semiconductor processing chamber |
US6258170B1 (en) * | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
JP3002448B1 (en) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | Substrate processing equipment |
US6221221B1 (en) | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
US6178919B1 (en) | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6257168B1 (en) * | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
JP3810248B2 (en) | 2000-03-27 | 2006-08-16 | 信越化学工業株式会社 | Silicon ring for plasma processing equipment |
JP2002009048A (en) | 2000-06-20 | 2002-01-11 | Matsushita Electric Ind Co Ltd | Focus ring for plasma processor |
JP2002064085A (en) | 2000-08-18 | 2002-02-28 | Ibiden Co Ltd | Component for semiconductor manufacturing equipment, its manufacturing method, and semiconductor manufacturing equipment |
US6974523B2 (en) | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
DE60106577T8 (en) | 2001-05-31 | 2006-04-27 | Alcatel | Removable umbrella device for plasma reactors |
US7972467B2 (en) | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
WO2005017984A1 (en) | 2003-08-18 | 2005-02-24 | Tokyo Electron Limited | Substrate holding structure and substrate processing device |
JP4627164B2 (en) | 2003-08-18 | 2011-02-09 | 東京エレクトロン株式会社 | Substrate holding structure and substrate processing apparatus |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
JP4361835B2 (en) | 2004-06-04 | 2009-11-11 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma control member, and plasma processing method |
KR100610010B1 (en) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | Apparatus for |
JP5031186B2 (en) | 2004-11-01 | 2012-09-19 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing system, and substrate processing program |
US20060090703A1 (en) * | 2004-11-01 | 2006-05-04 | Tokyo Electron Limited | Substrate processing method, system and program |
US20060172542A1 (en) | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
KR20070012954A (en) * | 2005-07-25 | 2007-01-30 | 동부일렉트로닉스 주식회사 | Focus ring for improving etch uniformity |
JP2007258585A (en) * | 2006-03-24 | 2007-10-04 | Tokyo Electron Ltd | Substrate placing mechanism and substrate processing apparatus |
US7780866B2 (en) | 2006-11-15 | 2010-08-24 | Applied Materials, Inc. | Method of plasma confinement for enhancing magnetic control of plasma radial distribution |
US8647438B2 (en) | 2007-04-27 | 2014-02-11 | Applied Materials, Inc. | Annular baffle |
US7988815B2 (en) | 2007-07-26 | 2011-08-02 | Applied Materials, Inc. | Plasma reactor with reduced electrical skew using electrical bypass elements |
US8075728B2 (en) | 2008-02-28 | 2011-12-13 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
US8360003B2 (en) | 2009-07-13 | 2013-01-29 | Applied Materials, Inc. | Plasma reactor with uniform process rate distribution by improved RF ground return path |
KR102045942B1 (en) | 2011-05-31 | 2019-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for dry etch with edge, side and back protection |
-
2008
- 2008-04-24 US US12/109,332 patent/US8647438B2/en active Active
- 2008-04-24 KR KR1020097024312A patent/KR101480738B1/en active IP Right Grant
- 2008-04-24 WO PCT/US2008/061448 patent/WO2008134446A1/en active Application Filing
- 2008-04-24 SG SG10201703432XA patent/SG10201703432XA/en unknown
- 2008-04-24 CN CN200880012922A patent/CN101663421A/en active Pending
- 2008-04-24 JP JP2010506496A patent/JP6097471B2/en active Active
- 2008-04-25 TW TW103118275A patent/TWI527116B/en active
- 2008-04-25 TW TW097115345A patent/TWI443738B/en active
-
2014
- 2014-01-23 US US14/162,497 patent/US20140130926A1/en not_active Abandoned
-
2016
- 2016-08-04 US US15/228,660 patent/US10012248B2/en active Active
- 2016-11-10 JP JP2016219491A patent/JP6442463B2/en active Active
-
2018
- 2018-11-25 JP JP2018219830A patent/JP2019054274A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW200908137A (en) | 2009-02-16 |
US20080314571A1 (en) | 2008-12-25 |
US20160341227A1 (en) | 2016-11-24 |
WO2008134446A1 (en) | 2008-11-06 |
US8647438B2 (en) | 2014-02-11 |
TW201440142A (en) | 2014-10-16 |
KR101480738B1 (en) | 2015-01-09 |
JP2010525612A (en) | 2010-07-22 |
JP6442463B2 (en) | 2018-12-19 |
CN101663421A (en) | 2010-03-03 |
JP2019054274A (en) | 2019-04-04 |
TWI443738B (en) | 2014-07-01 |
US10012248B2 (en) | 2018-07-03 |
US20140130926A1 (en) | 2014-05-15 |
JP2017085111A (en) | 2017-05-18 |
TWI527116B (en) | 2016-03-21 |
KR20100017240A (en) | 2010-02-16 |
JP6097471B2 (en) | 2017-03-15 |
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GB0705587D0 (en) | Antisplash vent | |
GB0722557D0 (en) | Self-centering rollerbox | |
PL384660A1 (en) | Time ring | |
GB0713023D0 (en) | Pils ring | |
GB0712954D0 (en) | Pils ring | |
GB0712805D0 (en) | Pils ring |