SG10201703133PA - Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system - Google Patents
Variable cycle and time rf activation method for film thickness matching in a multi-station deposition systemInfo
- Publication number
- SG10201703133PA SG10201703133PA SG10201703133PA SG10201703133PA SG10201703133PA SG 10201703133P A SG10201703133P A SG 10201703133PA SG 10201703133P A SG10201703133P A SG 10201703133PA SG 10201703133P A SG10201703133P A SG 10201703133PA SG 10201703133P A SG10201703133P A SG 10201703133PA
- Authority
- SG
- Singapore
- Prior art keywords
- film thickness
- time
- deposition system
- activation method
- variable cycle
- Prior art date
Links
- 230000004913 activation Effects 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/143,338 US20170314129A1 (en) | 2016-04-29 | 2016-04-29 | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201703133PA true SG10201703133PA (en) | 2017-11-29 |
Family
ID=60158112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703133PA SG10201703133PA (en) | 2016-04-29 | 2017-04-17 | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system |
Country Status (6)
Country | Link |
---|---|
US (2) | US20170314129A1 (en) |
JP (3) | JP6908426B2 (en) |
KR (4) | KR102302800B1 (en) |
CN (3) | CN116083881A (en) |
SG (1) | SG10201703133PA (en) |
TW (3) | TWI775749B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9797042B2 (en) | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
KR102323248B1 (en) * | 2015-03-25 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a thin film |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
SG11202109959TA (en) * | 2019-03-12 | 2021-10-28 | Lam Res Corp | Multi-station semiconductor processing with independently adjustable pedestals |
CN114207767B (en) * | 2019-06-07 | 2024-01-30 | 朗姆研究公司 | Independently adjustable flow path conductance in multi-station semiconductor processing |
WO2021138018A1 (en) * | 2020-01-03 | 2021-07-08 | Lam Research Corporation | Station-to-station control of backside bow compensation deposition |
US11449026B2 (en) | 2020-05-27 | 2022-09-20 | Applied Materials, Inc. | Variable loop control feature |
KR102437091B1 (en) * | 2020-08-14 | 2022-08-26 | 한국기계연구원 | Real-time control method for pecvd and reaction chamber for pecvd |
KR20240073974A (en) * | 2021-10-07 | 2024-05-27 | 램 리써치 코포레이션 | Selective control of multi-station processing chamber components |
CN115418629B (en) * | 2022-08-17 | 2024-01-12 | 杭州富芯半导体有限公司 | Method for thin film deposition |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2978974B2 (en) * | 1996-02-01 | 1999-11-15 | キヤノン販売株式会社 | Plasma processing equipment |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
KR100347379B1 (en) * | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | Atomic layer deposition apparatus for depositing multi substrate |
US20020195056A1 (en) * | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
TWI277139B (en) * | 2001-02-12 | 2007-03-21 | Asm Inc | Improved process for deposition of semiconductor filme |
JP2003049278A (en) | 2001-08-06 | 2003-02-21 | Canon Inc | Vacuum treatment method and vacuum treatment device |
JP2004068091A (en) * | 2002-08-07 | 2004-03-04 | Matsushita Electric Ind Co Ltd | Apparatus and method for film-forming treatment |
US7387815B2 (en) * | 2003-09-19 | 2008-06-17 | Akzo Nobel N.V. | Metallization of substrate(s) by a liquid/vapor deposition process |
US7459175B2 (en) * | 2005-01-26 | 2008-12-02 | Tokyo Electron Limited | Method for monolayer deposition |
JP5023004B2 (en) * | 2008-06-30 | 2012-09-12 | 株式会社日立国際電気 | Substrate processing method and substrate processing apparatus |
DE102010016471A1 (en) | 2010-04-16 | 2011-10-20 | Aixtron Ag | Apparatus and method for simultaneously depositing multiple semiconductor layers in multiple process chambers |
KR101395243B1 (en) * | 2011-04-29 | 2014-05-15 | 세메스 주식회사 | Apparatus and method for treating substrate |
KR20140037198A (en) * | 2011-06-09 | 2014-03-26 | 싱귤러스 엠오씨브이디 게엠바하 아이. 지알. | Method and system for inline chemical vapor deposition |
JP5878813B2 (en) * | 2011-06-21 | 2016-03-08 | 東京エレクトロン株式会社 | Batch processing equipment |
US8940646B1 (en) * | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
JP6257437B2 (en) | 2014-04-25 | 2018-01-10 | 株式会社トクヤマ | Crystal growth equipment |
US9797042B2 (en) * | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
US20160056032A1 (en) * | 2014-08-22 | 2016-02-25 | Lam Research Corporation | Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling |
JP6578158B2 (en) | 2015-08-28 | 2019-09-18 | 株式会社ニューフレアテクノロジー | Vapor growth apparatus and vapor growth method |
-
2016
- 2016-04-29 US US15/143,338 patent/US20170314129A1/en not_active Abandoned
-
2017
- 2017-04-17 SG SG10201703133PA patent/SG10201703133PA/en unknown
- 2017-04-18 KR KR1020170049539A patent/KR102302800B1/en active IP Right Grant
- 2017-04-20 JP JP2017083755A patent/JP6908426B2/en active Active
- 2017-04-26 TW TW106113839A patent/TWI775749B/en active
- 2017-04-26 TW TW111130779A patent/TWI817655B/en active
- 2017-04-26 TW TW112134025A patent/TW202401522A/en unknown
- 2017-04-28 CN CN202310088307.0A patent/CN116083881A/en active Pending
- 2017-04-28 CN CN202310082773.8A patent/CN116083880A/en active Pending
- 2017-04-28 CN CN201710291562.XA patent/CN107419238A/en active Pending
-
2021
- 2021-07-01 JP JP2021109808A patent/JP7282130B2/en active Active
- 2021-09-09 KR KR1020210120640A patent/KR102502272B1/en active IP Right Grant
-
2022
- 2022-01-28 US US17/587,560 patent/US20220154336A1/en active Pending
-
2023
- 2023-02-16 KR KR1020230020942A patent/KR102610664B1/en active IP Right Grant
- 2023-05-16 JP JP2023080505A patent/JP2023103367A/en active Pending
- 2023-12-01 KR KR1020230172344A patent/KR20230169037A/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20170124074A (en) | 2017-11-09 |
US20220154336A1 (en) | 2022-05-19 |
TW202314806A (en) | 2023-04-01 |
JP2021158386A (en) | 2021-10-07 |
KR102502272B1 (en) | 2023-02-20 |
TW202401522A (en) | 2024-01-01 |
KR102610664B1 (en) | 2023-12-05 |
TWI775749B (en) | 2022-09-01 |
TWI817655B (en) | 2023-10-01 |
JP2023103367A (en) | 2023-07-26 |
US20170314129A1 (en) | 2017-11-02 |
JP7282130B2 (en) | 2023-05-26 |
CN116083880A (en) | 2023-05-09 |
JP6908426B2 (en) | 2021-07-28 |
KR20230169037A (en) | 2023-12-15 |
TW201802885A (en) | 2018-01-16 |
JP2017199904A (en) | 2017-11-02 |
KR20210113585A (en) | 2021-09-16 |
CN107419238A (en) | 2017-12-01 |
CN116083881A (en) | 2023-05-09 |
KR102302800B1 (en) | 2021-09-15 |
KR20230027133A (en) | 2023-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201703133PA (en) | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system | |
PL3253976T3 (en) | A two-article system in which a first article has a thermoset coating, and method | |
PL3213608T3 (en) | Systems and methods for forming and maintaining a plasma in a high performance frc | |
EP3392369A4 (en) | Coating film, manufacturing method therefor, and pvd apparatus | |
SG10202002293XA (en) | Single ald cycle thickness control in multi-station substrate deposition systems | |
PL3054042T5 (en) | Method for manufacturing a laminate and laminate | |
EP3488233A4 (en) | Inspection method for a manufactured article and system for performing same | |
EP3196330A4 (en) | Coating film, manufacturing method for same, and pvd device | |
EP3391225A4 (en) | Method and device for correlating multiple tables in a database environment | |
EP3196331A4 (en) | Coating film, manufacturing method for same, and pvd device | |
SI3192910T1 (en) | Method for manufacturing a laminate and laminate | |
EP3248294A4 (en) | System and method for tdd-fdd duplexing in a radio architecture | |
AU2016395951B2 (en) | Identification method in a detonator network | |
GB201505328D0 (en) | A system and method for advertising items | |
EP3344982A4 (en) | A method and system for detecting a material discontinuity in a magnetisable article | |
HRP20181435T1 (en) | Method for reducing hexavalent chromium in oxidic solids | |
PL3237183T3 (en) | Method and apparatus for manufacturing a sandwich component | |
GB201707974D0 (en) | Motion-controlled arrangement for, and method of, locating targets with improved performance in a venue | |
EP3208257A4 (en) | Method for recycling urea in urea adduct process | |
HK1243205A1 (en) | Process simulation in cell a processing facility | |
EP3669665A4 (en) | Method for processing ginseng with ultra-high pressure | |
GB2530199B (en) | System and method of varying dwell time in a honeycomb plate press | |
PL3342429T3 (en) | Sterilization system and method having a thermodynamic cycle | |
EP3346211A4 (en) | Refrigeration cycle apparatus and method for positioning same | |
IL272889A (en) | Textured articles and methods for their manufacture |