SG10201607367UA - Method and system for graphene formation - Google Patents
Method and system for graphene formationInfo
- Publication number
- SG10201607367UA SG10201607367UA SG10201607367UA SG10201607367UA SG10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA SG 10201607367U A SG10201607367U A SG 10201607367UA
- Authority
- SG
- Singapore
- Prior art keywords
- graphene formation
- graphene
- formation
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910021389 graphene Inorganic materials 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
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- B01J19/122—Incoherent waves
- B01J19/129—Radiofrequency
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
- B01J19/22—Stationary reactors having moving elements inside in the form of endless belts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/32431—Constructional details of the reactor
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- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0873—Materials to be treated
- B01J2219/0879—Solid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261603104P | 2012-02-24 | 2012-02-24 | |
US201261607337P | 2012-03-06 | 2012-03-06 | |
US201261677323P | 2012-07-30 | 2012-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201607367UA true SG10201607367UA (en) | 2016-10-28 |
Family
ID=49006226
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404775RA SG11201404775RA (en) | 2012-02-24 | 2013-02-22 | Method and system for graphene formation |
SG10201908213V SG10201908213VA (en) | 2012-02-24 | 2013-02-22 | Method and system for graphene formation |
SG10201607367UA SG10201607367UA (en) | 2012-02-24 | 2013-02-22 | Method and system for graphene formation |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404775RA SG11201404775RA (en) | 2012-02-24 | 2013-02-22 | Method and system for graphene formation |
SG10201908213V SG10201908213VA (en) | 2012-02-24 | 2013-02-22 | Method and system for graphene formation |
Country Status (8)
Country | Link |
---|---|
US (3) | US9150418B2 (en) |
EP (1) | EP2817261A4 (en) |
JP (2) | JP6262156B2 (en) |
KR (1) | KR102107382B1 (en) |
CN (2) | CN106744866B (en) |
SG (3) | SG11201404775RA (en) |
TW (1) | TWI552954B (en) |
WO (1) | WO2013126671A1 (en) |
Families Citing this family (28)
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KR102107382B1 (en) * | 2012-02-24 | 2020-05-07 | 캘리포니아 인스티튜트 오브 테크놀로지 | Method and system for graphene formation |
KR101954999B1 (en) * | 2013-01-14 | 2019-03-06 | 캘리포니아 인스티튜트 오브 테크놀로지 | Method and system for graphene formation |
US9242865B2 (en) | 2013-03-05 | 2016-01-26 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
US9458020B2 (en) * | 2013-05-06 | 2016-10-04 | Centre National De La Recherche Scientifique | Process and device for forming a graphene layer |
GB201318463D0 (en) * | 2013-08-13 | 2013-12-04 | Medical Res Council | Graphene Modification |
WO2015149116A1 (en) * | 2014-04-04 | 2015-10-08 | Commonwealth Scientific And Industrial Research Organisation | Graphene process and product |
US10072355B2 (en) * | 2014-04-15 | 2018-09-11 | Board Of Regents, The University Of Texas System | Methods of forming graphene single crystal domains on a low nucleation site density substrate |
WO2016006943A1 (en) * | 2014-07-09 | 2016-01-14 | 재단법인대구경북과학기술원 | Metal nanowire having core-shell structure coated with graphene, and manufacturing method therefor |
CN104211054B (en) * | 2014-09-09 | 2016-05-18 | 中国科学院化学研究所 | A kind of controlled method of preparing Graphene |
CN104576457A (en) * | 2014-12-26 | 2015-04-29 | 常州二维碳素科技有限公司 | Equipment for performing surface treatment on graphene workpieces as well as treatment method of equipment |
KR101723521B1 (en) * | 2015-02-26 | 2017-04-05 | 주성엔지니어링(주) | Apparatus for growing a graphene |
KR101717476B1 (en) * | 2015-02-27 | 2017-03-27 | 주성엔지니어링(주) | Apparatus for growing a graphene |
TWI539043B (en) | 2015-07-21 | 2016-06-21 | 財團法人工業技術研究院 | Method for manufacturing graphene flower |
JP6661189B2 (en) * | 2015-10-02 | 2020-03-11 | 国立研究開発法人産業技術総合研究所 | How to make graphene film |
CN105220128B (en) * | 2015-11-16 | 2018-03-16 | 哈尔滨工业大学 | A kind of preparation method of Zr alloy surface original position vertical-growth graphene anticorrosive coat |
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CN106248221A (en) * | 2016-07-19 | 2016-12-21 | 中国科学院重庆绿色智能技术研究院 | A kind of non-refrigerated infrared detector based on Graphene and in situ manufacture method |
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US10825586B2 (en) * | 2017-08-30 | 2020-11-03 | Ultra Conductive Copper Company, Inc. | Method and system for forming a multilayer composite structure |
ES2717199B2 (en) * | 2017-12-19 | 2022-07-21 | Pamies Javier Biela | BIOGAS PLANT |
CN109930133A (en) * | 2019-03-21 | 2019-06-25 | 西南大学 | A kind of preparation method of the graphene zirconium oxide composite material for gas sensing |
CN109975368A (en) * | 2019-03-21 | 2019-07-05 | 西南大学 | A kind of preparation method of the graphene oxidation tin composite material for gas sensing |
US20230102041A1 (en) | 2020-02-03 | 2023-03-30 | Cealtech As | Process and device for large-scale production of graphene |
JP2022007053A (en) * | 2020-06-25 | 2022-01-13 | 東京エレクトロン株式会社 | Film formation method and film formation device |
CN111847432B (en) * | 2020-07-24 | 2023-08-29 | 北京石墨烯研究院 | Large-area multilayer graphene and preparation method thereof |
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US10167572B2 (en) * | 2009-08-07 | 2019-01-01 | Guardian Glass, LLC | Large area deposition of graphene via hetero-epitaxial growth, and products including the same |
US20120161098A1 (en) * | 2009-08-20 | 2012-06-28 | Nec Corporation | Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element |
KR101636442B1 (en) * | 2009-11-10 | 2016-07-21 | 삼성전자주식회사 | Method of fabricating graphene using alloy catalyst |
KR101279606B1 (en) | 2009-12-11 | 2013-07-05 | 한국전자통신연구원 | Method for depositing graphene film |
JP5692794B2 (en) * | 2010-03-17 | 2015-04-01 | 独立行政法人産業技術総合研究所 | Method for producing transparent conductive carbon film |
JP5660804B2 (en) * | 2010-04-30 | 2015-01-28 | 東京エレクトロン株式会社 | Carbon nanotube formation method and carbon nanotube film forming apparatus |
KR20120012271A (en) * | 2010-07-30 | 2012-02-09 | 성균관대학교산학협력단 | Preparing method of graphene, graphene shheet and device using the same |
US8597738B2 (en) * | 2010-10-11 | 2013-12-03 | Qingkai Yu | Fabrication of single-crystalline graphene arrays |
CN102212794B (en) * | 2011-04-13 | 2012-10-10 | 中国科学院上海微***与信息技术研究所 | Copper plating substrate-based method for preparing large-area graphene film |
WO2013027284A1 (en) | 2011-08-24 | 2013-02-28 | 旭化成イーマテリアルズ株式会社 | Encapsulating resin sheet and solar cell module |
KR102107382B1 (en) | 2012-02-24 | 2020-05-07 | 캘리포니아 인스티튜트 오브 테크놀로지 | Method and system for graphene formation |
-
2013
- 2013-02-22 KR KR1020147025067A patent/KR102107382B1/en active IP Right Grant
- 2013-02-22 EP EP13751679.5A patent/EP2817261A4/en active Pending
- 2013-02-22 CN CN201611162591.8A patent/CN106744866B/en active Active
- 2013-02-22 SG SG11201404775RA patent/SG11201404775RA/en unknown
- 2013-02-22 SG SG10201908213V patent/SG10201908213VA/en unknown
- 2013-02-22 CN CN201380010837.8A patent/CN104136368B/en active Active
- 2013-02-22 US US13/774,188 patent/US9150418B2/en active Active
- 2013-02-22 JP JP2014558853A patent/JP6262156B2/en active Active
- 2013-02-22 SG SG10201607367UA patent/SG10201607367UA/en unknown
- 2013-02-22 WO PCT/US2013/027284 patent/WO2013126671A1/en active Application Filing
- 2013-02-23 TW TW102106432A patent/TWI552954B/en active
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2015
- 2015-08-27 US US14/838,202 patent/US20150368111A1/en not_active Abandoned
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2016
- 2016-08-24 US US15/246,427 patent/US20170044018A1/en not_active Abandoned
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WO2013126671A1 (en) | 2013-08-29 |
JP6562996B2 (en) | 2019-08-21 |
SG10201908213VA (en) | 2019-10-30 |
JP2015510489A (en) | 2015-04-09 |
KR20140135725A (en) | 2014-11-26 |
US20170044018A1 (en) | 2017-02-16 |
JP6262156B2 (en) | 2018-01-17 |
CN104136368B (en) | 2017-02-22 |
US20140044885A1 (en) | 2014-02-13 |
TWI552954B (en) | 2016-10-11 |
JP2018074171A (en) | 2018-05-10 |
EP2817261A1 (en) | 2014-12-31 |
TW201336784A (en) | 2013-09-16 |
CN104136368A (en) | 2014-11-05 |
CN106744866A (en) | 2017-05-31 |
EP2817261A4 (en) | 2015-10-28 |
US9150418B2 (en) | 2015-10-06 |
US20150368111A1 (en) | 2015-12-24 |
SG11201404775RA (en) | 2014-09-26 |
CN106744866B (en) | 2021-01-01 |
KR102107382B1 (en) | 2020-05-07 |
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