SG10201605000PA - Methods and apparatus for cleaning substrate surfaces with atomic hydrogen - Google Patents

Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Info

Publication number
SG10201605000PA
SG10201605000PA SG10201605000PA SG10201605000PA SG10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA SG 10201605000P A SG10201605000P A SG 10201605000PA
Authority
SG
Singapore
Prior art keywords
methods
substrate surfaces
atomic hydrogen
cleaning substrate
cleaning
Prior art date
Application number
SG10201605000PA
Inventor
Cruz Joe Griffith
Jeongwon Park
Pravin K Narwankar
Nate Si Nguyen
Hanh Nguyen
To Chan
Jingjing Xu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201605000PA publication Critical patent/SG10201605000PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG10201605000PA 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen SG10201605000PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Publications (1)

Publication Number Publication Date
SG10201605000PA true SG10201605000PA (en) 2016-08-30

Family

ID=48653348

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201605000PA SG10201605000PA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Country Status (6)

Country Link
US (2) US20130160794A1 (en)
JP (1) JP6181075B2 (en)
KR (1) KR20140107580A (en)
CN (1) CN104025264B (en)
SG (2) SG10201605000PA (en)
WO (1) WO2013096748A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
US10269593B2 (en) 2013-03-14 2019-04-23 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
CN110098138B (en) 2013-09-25 2023-07-18 Ev 集团 E·索尔纳有限责任公司 Apparatus and method for bonding substrates
DE112014006932T5 (en) * 2014-09-08 2017-06-01 Mitsubishi Electric Corporation Halbleitertempervorrichtung
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
TWI678721B (en) 2014-10-06 2019-12-01 美商東京威力科創Ｆｓｉ股份有限公司 Systems and methods for treating substrates with cryogenic fluid mixtures
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (en) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 The ArH cleaning methods of optical element surface carbon pollution
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (en) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 Semiconductor manufacturing facility and manufacture method
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
WO2019199681A1 (en) 2018-04-09 2019-10-17 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5409543A (en) * 1992-12-22 1995-04-25 Sandia Corporation Dry soldering with hot filament produced atomic hydrogen
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH09190979A (en) * 1996-01-10 1997-07-22 Nec Corp Selective silicon epitaxial growth method, and growth device
US6395099B1 (en) * 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
JP4459329B2 (en) * 1999-08-05 2010-04-28 キヤノンアネルバ株式会社 Method and apparatus for removing attached film
US20020104481A1 (en) * 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
KR20020083767A (en) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 Method for cleaning substrate in selective epitaxial growth process
US6529686B2 (en) * 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
WO2004074932A2 (en) * 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
JP4652841B2 (en) * 2005-02-21 2011-03-16 キヤノンアネルバ株式会社 Hydrogen atom generation source and hydrogen atom transport method in vacuum processing apparatus
JP2006279008A (en) * 2005-03-02 2006-10-12 Ushio Inc Heater and heating apparatus having the same
US20080078325A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Processing system containing a hot filament hydrogen radical source for integrated substrate processing
JP5024765B2 (en) * 2007-01-30 2012-09-12 株式会社フジクラ Method for cleaning oxide substrate and method for manufacturing oxide semiconductor thin film
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5099793B2 (en) * 2007-11-06 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning gas generation structure
JP2009177088A (en) * 2008-01-28 2009-08-06 Tokyo Electron Ltd Wafer processing apparatus
JP4406666B2 (en) * 2008-02-20 2010-02-03 シャープ株式会社 Vacuum processing equipment and vacuum processing factory
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
US8454850B2 (en) * 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
US9139910B2 (en) * 2010-06-11 2015-09-22 Tokyo Electron Limited Method for chemical vapor deposition control

Also Published As

Publication number Publication date
WO2013096748A1 (en) 2013-06-27
JP2015503841A (en) 2015-02-02
US20130160794A1 (en) 2013-06-27
JP6181075B2 (en) 2017-08-16
CN104025264A (en) 2014-09-03
CN104025264B (en) 2017-09-12
KR20140107580A (en) 2014-09-04
SG11201403005TA (en) 2014-09-26
US20150311061A1 (en) 2015-10-29

Similar Documents

Publication Publication Date Title
SG10201605000PA (en) Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
HK1232292A1 (en) Systems and methods for sample use maximization
HK1198726A1 (en) Apparatus and method for cleaning photovoltaic devices
SG11201406133WA (en) Methods and apparatuses for cleaning electroplating substrate holders
SG11201405417YA (en) Atomic layer deposition method and apparatuses
IL228212A (en) Methods and apparatus for functional insert with power layer
EP2708507A4 (en) Method for manufacturing nanocarbon and manufacturing device
EP2765793A4 (en) Method and related device for generating group key
EP2776233A4 (en) Methods and apparatus for 3d fabrication
EP2765795A4 (en) Method and relevant device for generating group key
EP2769317A4 (en) Methods and apparatuses for facilitating interaction with a geohash-indexed data set
SG10201605318YA (en) Electronic tool and methods for meetings
PL2707705T3 (en) Surface property inspection device and surface property inspection method
TWI560305B (en) Method and apparatus for vapor deposition
HK1190999A1 (en) Oxide film deposition method and oxide film deposition device
SG10201601309YA (en) Electronic tool and methods for meetings
EP2723647A4 (en) Vessel closures and methods for using and manufacturing same
ZA201405372B (en) Device and method for detecting deposits
GB201122089D0 (en) Telecomunication apparatus and methods
EP2749117A4 (en) Method and apparatus for managing terminals
HUP1100630A2 (en) Apparatus and method for cleaning solar panels
SG10201605873QA (en) Plating apparatus and plating method
EP2750811A4 (en) Method and apparatus for cleaning
SG11201401599VA (en) Method for manufacturing modified polymer and hydrogen adduct thereof
GB201119598D0 (en) Etching apparatus and methods