SG10201501339QA - Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device - Google Patents

Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device

Info

Publication number
SG10201501339QA
SG10201501339QA SG10201501339QA SG10201501339QA SG10201501339QA SG 10201501339Q A SG10201501339Q A SG 10201501339QA SG 10201501339Q A SG10201501339Q A SG 10201501339QA SG 10201501339Q A SG10201501339Q A SG 10201501339QA SG 10201501339Q A SG10201501339Q A SG 10201501339QA
Authority
SG
Singapore
Prior art keywords
magnetoelectric device
magnetoelectric
forming
writing method
writing
Prior art date
Application number
SG10201501339QA
Inventor
Michael Tran
Cheow Hin Sim
Guchang Han
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG10201501339QA priority Critical patent/SG10201501339QA/en
Publication of SG10201501339QA publication Critical patent/SG10201501339QA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
SG10201501339QA 2014-03-05 2015-02-24 Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device SG10201501339QA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG10201501339QA SG10201501339QA (en) 2014-03-05 2015-02-24 Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201400395Q 2014-03-05
SG10201501339QA SG10201501339QA (en) 2014-03-05 2015-02-24 Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device

Publications (1)

Publication Number Publication Date
SG10201501339QA true SG10201501339QA (en) 2015-10-29

Family

ID=54018002

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201501339QA SG10201501339QA (en) 2014-03-05 2015-02-24 Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device

Country Status (2)

Country Link
US (1) US9601174B2 (en)
SG (1) SG10201501339QA (en)

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US9583696B2 (en) * 2014-03-12 2017-02-28 Qualcomm Incorporated Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
JP6777094B2 (en) * 2015-11-27 2020-10-28 Tdk株式会社 Spin current magnetization reversal element, magnetoresistive element and magnetic memory
US10686127B2 (en) * 2016-03-28 2020-06-16 National University Of Singapore Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
WO2018005699A1 (en) * 2016-06-28 2018-01-04 Inston Inc. Systems for implementing word line pulse techniques in magnetoelectric junctions
US9876164B1 (en) * 2016-10-01 2018-01-23 Samsung Electronics Co., Ltd. Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications
US10546997B2 (en) * 2016-12-02 2020-01-28 Regents Of The University Of Minnesota Magnetic structures including FePd
WO2018125105A1 (en) * 2016-12-28 2018-07-05 Intel Corporation Templating of complex oxides for ferroelectric and magnetoelectric integration
JP2018163710A (en) * 2017-03-24 2018-10-18 東芝メモリ株式会社 Semiconductor storage device
US10032978B1 (en) * 2017-06-27 2018-07-24 Spin Transfer Technologies, Inc. MRAM with reduced stray magnetic fields
JP2019047119A (en) * 2017-09-04 2019-03-22 Tdk株式会社 Magnetoresistive effect element, magnetic memory, and magnetic device
US10529439B2 (en) * 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10481976B2 (en) * 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10489245B2 (en) * 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
KR102423433B1 (en) * 2017-12-05 2022-07-22 키오시아 가부시키가이샤 Electronic device
US10636964B2 (en) * 2018-03-30 2020-04-28 Applied Materials, Inc. Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
CN112310271B (en) * 2019-07-25 2023-04-07 上海磁宇信息科技有限公司 Magnetic tunnel junction structure of magnetic random access memory
CN112490354A (en) * 2019-09-11 2021-03-12 上海磁宇信息科技有限公司 Magnetic random access memory storage unit and magnetic random access memory
CN112750944A (en) * 2019-10-30 2021-05-04 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory
CN112864306A (en) * 2019-11-12 2021-05-28 上海磁宇信息科技有限公司 Magnetic tunnel junction structure with symmetrical double barrier layers and magnetic random access memory
US11500042B2 (en) * 2020-02-28 2022-11-15 Brown University Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films
CN113346007A (en) * 2020-03-02 2021-09-03 上海磁宇信息科技有限公司 Magnetic tunnel junction structure and magnetic random access memory thereof
JP7435057B2 (en) * 2020-03-10 2024-02-21 Tdk株式会社 magnetoresistive element
US11393495B2 (en) * 2020-03-26 2022-07-19 Seagate Technology Llc Reader with a multi-layer synthetic ferrimagnet free layer
KR102394058B1 (en) * 2020-10-15 2022-05-04 한국과학기술연구원 Voltage controlled magnetoresistance device comprising layered magnetic material
CN116828965A (en) * 2022-03-21 2023-09-29 中电海康集团有限公司 Magnetic memory cell and magnetic memory device

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US7193259B2 (en) * 2004-07-23 2007-03-20 Hewlett-Packard Development Company, L.P. Thermally written magnetic memory device
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
JP4915626B2 (en) * 2009-03-18 2012-04-11 株式会社東芝 Magnetoresistive element and magnetic random access memory
US8779538B2 (en) * 2009-08-10 2014-07-15 Samsung Electronics Co., Ltd. Magnetic tunneling junction seed, capping, and spacer layer materials
US8891292B2 (en) * 2012-12-19 2014-11-18 Avalanche Technology, Inc. Magnetoresistive layer structure with voltage-induced switching and logic cell application
US9082872B2 (en) * 2013-01-02 2015-07-14 Headway Technologies, Inc. Magnetic read head with MR enhancements
US10783943B2 (en) * 2013-02-19 2020-09-22 Yimin Guo MRAM having novel self-referenced read method
KR102078850B1 (en) * 2013-03-15 2020-02-18 삼성전자 주식회사 Magnetic memory device and data writing method with respect to the same
CN105122489B (en) * 2013-11-01 2017-10-13 中国科学院物理研究所 A kind of nanoscale magnetic multilayers and its manufacture method for temperature sensor
US9461094B2 (en) * 2014-07-17 2016-10-04 Qualcomm Incorporated Switching film structure for magnetic random access memory (MRAM) cell
US9362336B2 (en) * 2014-09-11 2016-06-07 Qualcomm Incorporated Sub-lithographic patterning of magnetic tunneling junction devices

Also Published As

Publication number Publication date
US9601174B2 (en) 2017-03-21
US20150255135A1 (en) 2015-09-10

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