SG10201500898RA - Microelectronic devices with through-substrate interconnects and associated methods of manufacturing - Google Patents

Microelectronic devices with through-substrate interconnects and associated methods of manufacturing

Info

Publication number
SG10201500898RA
SG10201500898RA SG10201500898RA SG10201500898RA SG10201500898RA SG 10201500898R A SG10201500898R A SG 10201500898RA SG 10201500898R A SG10201500898R A SG 10201500898RA SG 10201500898R A SG10201500898R A SG 10201500898RA SG 10201500898R A SG10201500898R A SG 10201500898RA
Authority
SG
Singapore
Prior art keywords
manufacturing
associated methods
microelectronic devices
substrate interconnects
interconnects
Prior art date
Application number
SG10201500898RA
Inventor
Kyle K Kirby
Kunal R Parekh
Sarah A Niroumand
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201500898RA publication Critical patent/SG10201500898RA/en

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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/049Nitrides composed of metals from groups of the periodic table
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
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    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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