SG10201407955QA - Crystallization processing for semiconductor applications - Google Patents

Crystallization processing for semiconductor applications

Info

Publication number
SG10201407955QA
SG10201407955QA SG10201407955QA SG10201407955QA SG10201407955QA SG 10201407955Q A SG10201407955Q A SG 10201407955QA SG 10201407955Q A SG10201407955Q A SG 10201407955QA SG 10201407955Q A SG10201407955Q A SG 10201407955QA SG 10201407955Q A SG10201407955Q A SG 10201407955QA
Authority
SG
Singapore
Prior art keywords
semiconductor layer
crystalline
crystallization processing
semiconductor applications
pulse train
Prior art date
Application number
SG10201407955QA
Inventor
Stephan Moffat
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201407955QA publication Critical patent/SG10201407955QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

31 CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS Abstract A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. Fig. 1A
SG10201407955QA 2009-11-30 2010-11-23 Crystallization processing for semiconductor applications SG10201407955QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26531209P 2009-11-30 2009-11-30

Publications (1)

Publication Number Publication Date
SG10201407955QA true SG10201407955QA (en) 2015-01-29

Family

ID=44067201

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201407955QA SG10201407955QA (en) 2009-11-30 2010-11-23 Crystallization processing for semiconductor applications

Country Status (8)

Country Link
US (5) US8313965B2 (en)
EP (1) EP2507819A4 (en)
JP (5) JP2013512572A (en)
KR (1) KR101594880B1 (en)
CN (2) CN102640263B (en)
SG (1) SG10201407955QA (en)
TW (2) TWI459444B (en)
WO (1) WO2011066310A2 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080121343A1 (en) 2003-12-31 2008-05-29 Microfabrica Inc. Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates
TWI459444B (en) 2009-11-30 2014-11-01 Applied Materials Inc Crystallization processing for semiconductor applications
DE102012003748B4 (en) * 2011-03-01 2016-12-15 Infineon Technologies Austria Ag A method for producing a porous semiconductor body region and for introducing a foreign substance
US9196753B2 (en) 2011-04-19 2015-11-24 Micron Technology, Inc. Select devices including a semiconductive stack having a semiconductive material
TW201310551A (en) * 2011-07-29 2013-03-01 Applied Materials Inc Methods of thermally processing a substrate
TWI590309B (en) 2011-09-01 2017-07-01 應用材料股份有限公司 Crystallization methods
TW201324818A (en) * 2011-10-21 2013-06-16 Applied Materials Inc Method and apparatus for fabricating silicon heterojunction solar cells
US20130125983A1 (en) * 2011-11-18 2013-05-23 Integrated Photovoltaic, Inc. Imprinted Dielectric Structures
US11133390B2 (en) * 2013-03-15 2021-09-28 The Boeing Company Low temperature, thin film crystallization method and products prepared therefrom
JP2014239182A (en) * 2013-06-10 2014-12-18 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device and method for forming cmos
US9722105B2 (en) * 2014-03-28 2017-08-01 Sunpower Corporation Conversion of metal seed layer for buffer material
JP2018022712A (en) * 2014-12-10 2018-02-08 東京エレクトロン株式会社 Method for forming fine structure, method for fabricating semiconductor device, and method for forming cmos
CN106298451A (en) * 2016-08-18 2017-01-04 昆山国显光电有限公司 Laser crystallization method and device
CN107785238B (en) * 2016-08-25 2020-07-24 西安电子科技大学 InGaAs material, MOS device based on InGaAs material as channel and preparation method thereof
CN107785408A (en) * 2016-08-25 2018-03-09 西安电子科技大学 Ge/Si void backing materials and preparation method thereof
CN107785451A (en) * 2016-08-25 2018-03-09 西藏民族大学 Ge PIN photoelectric detectors based on Ge/Si void substrates and preparation method thereof
CN107785454A (en) * 2016-08-25 2018-03-09 西藏民族大学 GeSn photodetectors based on Ge/Si void substrates and preparation method thereof
CN108269879A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates and preparation method thereof
CN108269880A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 Ge/GaAs double-junction solar batteries and preparation method thereof on laser assisted crystallization Ge/Si substrates
CN108269876A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 InGaAs/Ge double-junction solar batteries and preparation method thereof
CN108269881A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 Laser assisted crystallization Ge/Si substrate GaAs unijunction solar cells and its preparation process
CN108269874A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 GaInP2The preparation method of/GaAs/Ge three-joint solar cells
CN108269875A (en) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 GaAs/AlGaAs double-junction solar batteries with LRC-Ge/Si substrates and preparation method thereof
CN107123711B (en) * 2017-05-17 2019-02-26 深圳市长方集团股份有限公司 A kind of carinate LED and preparation method thereof
CN107170859A (en) * 2017-05-17 2017-09-15 厦门科锐捷半导体科技有限公司 Based on transversary light emitting diode
CN107275453A (en) * 2017-05-17 2017-10-20 西安科锐盛创新科技有限公司 Carinate light emitting diode
CN107221582A (en) * 2017-05-17 2017-09-29 厦门科锐捷半导体科技有限公司 A kind of light emitting diode and preparation method thereof
CN107170858A (en) * 2017-05-17 2017-09-15 厦门科锐捷半导体科技有限公司 Transversary LED and preparation method thereof
CN107046086A (en) * 2017-05-17 2017-08-15 厦门科锐捷半导体科技有限公司 Light emitting diode
CN107332622A (en) * 2017-05-17 2017-11-07 西安科锐盛创新科技有限公司 LED light emitter
CN107123712B (en) * 2017-05-17 2019-06-28 湛江通用电气有限公司 A kind of infrared LED and preparation method thereof
CN107275458A (en) * 2017-05-17 2017-10-20 西安科锐盛创新科技有限公司 Light emitting diode based on ledge structure
CN107346992A (en) * 2017-05-17 2017-11-14 西安科锐盛创新科技有限公司 A kind of optical sender and optical fiber telecommunications system
CN107658339A (en) * 2017-08-11 2018-02-02 西安科锐盛创新科技有限公司 Direct band gap GeSnP type TFET devices based on LRC and preparation method thereof
CN107564958A (en) * 2017-08-11 2018-01-09 西安科锐盛创新科技有限公司 GeSn tunneling field-effect transistors based on LRC and preparation method thereof
CN107611003A (en) * 2017-08-11 2018-01-19 西安科锐盛创新科技有限公司 Direct band gap GeSn complementary type TFET devices based on LRC and preparation method thereof
TWI737004B (en) * 2018-12-03 2021-08-21 日商住友重機械工業股份有限公司 Annealing device and annealing method
CN112216603A (en) * 2019-07-10 2021-01-12 创能动力科技有限公司 Laser processing method for wafer and semiconductor device

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5210766A (en) * 1990-12-27 1993-05-11 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
JPH065537A (en) * 1992-06-22 1994-01-14 Casio Comput Co Ltd Method for annealing semiconductor layer
JPH06232069A (en) 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
TW272319B (en) 1993-12-20 1996-03-11 Sharp Kk
US5456763A (en) 1994-03-29 1995-10-10 The Regents Of The University Of California Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon
JPH0864526A (en) * 1994-08-24 1996-03-08 Sony Corp Modifying method of material by photo-irradiation and manufacture of semiconductor device
JP3388042B2 (en) * 1994-11-18 2003-03-17 三菱電機株式会社 Laser annealing method
US6599790B1 (en) 1996-02-15 2003-07-29 Semiconductor Energy Laboratory Co., Ltd Laser-irradiation method and laser-irradiation device
US6455359B1 (en) 1997-02-13 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Laser-irradiation method and laser-irradiation device
US6582996B1 (en) 1998-07-13 2003-06-24 Fujitsu Limited Semiconductor thin film forming method
US6255148B1 (en) 1998-07-13 2001-07-03 Fujitsu Limited Polycrystal thin film forming method and forming system
GB9819338D0 (en) 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP2001023918A (en) 1999-07-08 2001-01-26 Nec Corp Semiconductor thin-film forming apparatus
JP3422290B2 (en) * 1999-07-22 2003-06-30 日本電気株式会社 Manufacturing method of semiconductor thin film
JP2001319891A (en) * 2000-05-10 2001-11-16 Nec Corp Method and apparatus for processing thin film
US6451631B1 (en) 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
CN1443364A (en) * 2001-04-19 2003-09-17 纽约市哥伦比亚大学托管会 Method and system for providing single-scan, continuous motion sequential lateral solidification
JP2002198313A (en) * 2001-09-14 2002-07-12 Nec Corp Method for forming semiconductor thin film, pulse laser radiation apparatus and semiconductor device
JP2003109912A (en) * 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd Laser annealer
US6812491B2 (en) * 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
US7023500B2 (en) 2002-06-05 2006-04-04 Hitachi, Ltd. Display device with active-matrix transistor having silicon film modified by selective laser irradiation
DE10230696B4 (en) * 2002-07-08 2005-09-22 Infineon Technologies Ag Method for producing a short channel field effect transistor
TWI360707B (en) 2002-08-19 2012-03-21 Univ Columbia Process and system for laser crystallization proc
JP3859148B2 (en) * 2002-10-31 2006-12-20 信越半導体株式会社 Method for manufacturing Zn-based semiconductor light emitting device
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
JP4727135B2 (en) * 2003-05-26 2011-07-20 富士フイルム株式会社 Laser annealing equipment
TWI235496B (en) * 2003-07-04 2005-07-01 Toppoly Optoelectronics Corp Crystallization method of polysilicon layer
KR100531416B1 (en) 2003-09-17 2005-11-29 엘지.필립스 엘시디 주식회사 Device used in Sequential Lateral Solidification and Method for Crystallizing Silicon with the same
EP1537938A3 (en) 2003-12-02 2009-02-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
KR100568298B1 (en) * 2004-03-30 2006-04-05 삼성전기주식회사 Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof
DE102004036220B4 (en) 2004-07-26 2009-04-02 Jürgen H. Werner Method for laser doping of solids with a line-focused laser beam
JP2006086447A (en) * 2004-09-17 2006-03-30 Sharp Corp Method and apparatus for manufacturing semiconductor thin film
JP2006135232A (en) * 2004-11-09 2006-05-25 Sharp Corp Method and apparatus for manufacturing semiconductor device
EP1812958A1 (en) * 2004-11-18 2007-08-01 The Trustees of Columbia University in the City of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP3977379B2 (en) * 2005-03-29 2007-09-19 株式会社日本製鋼所 Method and apparatus for crystallizing thin film material
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7507648B2 (en) 2005-06-30 2009-03-24 Ramesh Kakkad Methods of fabricating crystalline silicon film and thin film transistors
CN101288155A (en) 2005-08-16 2008-10-15 纽约市哥伦比亚大学事事会 High throughput crystallization of thin films
JP5519150B2 (en) 2005-08-16 2014-06-11 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク System and method for uniform sequential lateral crystallization of thin films using a high frequency laser
WO2008091242A2 (en) * 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
KR100681262B1 (en) * 2006-01-24 2007-02-09 삼성전자주식회사 Method of manufacturing a stacked semiconductor memory device
JP5099576B2 (en) * 2006-02-23 2012-12-19 株式会社Ｉｈｉ Method and apparatus for activating compound semiconductor
US20070212859A1 (en) * 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
JP2007281421A (en) 2006-03-13 2007-10-25 Sony Corp Method of crystallizing semiconductor thin film
JP2007281420A (en) 2006-03-13 2007-10-25 Sony Corp Method for crystallizing semiconductor thin film
US7579654B2 (en) 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
JP5084185B2 (en) * 2006-06-23 2012-11-28 住友重機械工業株式会社 Manufacturing method of semiconductor thin film
TWI330389B (en) * 2006-10-27 2010-09-11 Chimei Innolux Corp A method of manufacturing low temperature polysilicon film
JP5177994B2 (en) * 2006-11-02 2013-04-10 住友重機械工業株式会社 Temperature measuring apparatus and temperature calculating method
JP2008124149A (en) 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd Optical device, and crystallization equipment
KR100818285B1 (en) * 2006-11-17 2008-04-01 삼성전자주식회사 Fabrication method of single crystal silicon rod
JP5003277B2 (en) 2007-05-18 2012-08-15 ソニー株式会社 Thin film crystallization method, thin film semiconductor device manufacturing method, electronic device manufacturing method, and display device manufacturing method
DE102007025942A1 (en) * 2007-06-04 2008-12-11 Coherent Gmbh Process for the selective thermal surface treatment of a surface substrate
KR20100074179A (en) 2007-09-25 2010-07-01 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8003498B2 (en) * 2007-11-13 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
US8012861B2 (en) * 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US7842583B2 (en) * 2007-12-27 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
US7902051B2 (en) * 2008-01-07 2011-03-08 International Business Machines Corporation Method for fabrication of single crystal diodes for resistive memories
DE102008045533B4 (en) * 2008-09-03 2016-03-03 Innovavent Gmbh Method and apparatus for changing the structure of a semiconductor layer
JP2013510443A (en) * 2009-11-03 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク System and method for partial dissolution membrane treatment with non-periodic pulses
TWI459444B (en) * 2009-11-30 2014-11-01 Applied Materials Inc Crystallization processing for semiconductor applications

Also Published As

Publication number Publication date
JP6629277B2 (en) 2020-01-15
EP2507819A2 (en) 2012-10-10
JP2020038973A (en) 2020-03-12
WO2011066310A3 (en) 2011-08-18
CN102640263B (en) 2015-11-25
CN105206509A (en) 2015-12-30
JP2018050060A (en) 2018-03-29
US8691605B2 (en) 2014-04-08
JP6238373B2 (en) 2017-11-29
US20130143417A1 (en) 2013-06-06
JP6847179B2 (en) 2021-03-24
JP2014088310A (en) 2014-05-15
KR20120098839A (en) 2012-09-05
US9290858B2 (en) 2016-03-22
EP2507819A4 (en) 2015-04-29
WO2011066310A2 (en) 2011-06-03
US9455145B2 (en) 2016-09-27
TWI459444B (en) 2014-11-01
CN105206509B (en) 2018-05-18
US8313965B2 (en) 2012-11-20
JP2013512572A (en) 2013-04-11
US20110129959A1 (en) 2011-06-02
TWI528418B (en) 2016-04-01
US20140150712A1 (en) 2014-06-05
US20160155638A1 (en) 2016-06-02
CN102640263A (en) 2012-08-15
US8906725B2 (en) 2014-12-09
KR101594880B1 (en) 2016-02-17
TW201125022A (en) 2011-07-16
JP5954795B2 (en) 2016-07-20
US20150013588A1 (en) 2015-01-15
JP2016105492A (en) 2016-06-09
TW201344761A (en) 2013-11-01

Similar Documents

Publication Publication Date Title
SG10201407955QA (en) Crystallization processing for semiconductor applications
EA201071184A1 (en) METHOD FOR DEPOSITING A THIN LAYER
WO2009047894A1 (en) Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate
MY177289A (en) Method and apparatus for performing laser filamentation within transparent materials
JP2017534750A5 (en)
EA201400222A1 (en) METHOD AND DEVICE FOR FORMING A LAYERED SYSTEM WITH LOW RADIATIVE ABILITY
TW201614089A (en) A high power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
EP2161316A4 (en) Antifouling coating composition, process for producing the composition, antifouling coating film formed from the composition, coated object having the coating film on surface, and method of antifouling treatment by formation of the coating film
EA201490810A1 (en) METHOD OF HEAT TREATMENT OF SILVER LAYERS
TW200713423A (en) Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
TW200709278A (en) Method and apparatus to control semiconductor film deposition characteristics
JP2013512572A5 (en)
MY150193A (en) Treating al/zn-based alloy coated products
TW200713424A (en) High throughput crystallization of thin films
WO2011047210A3 (en) Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
RU2010148544A (en) METHOD FOR SEPARATING THE SURFACE LAYER OF A SEMICONDUCTOR CRYSTAL (OPTIONS)
MX2011009327A (en) Digital heat injection by way of surface emitting semi-conductor devices.
WO2012150763A3 (en) Method for manufacturing high quality graphene using continuous heat treatment chemical vapor deposition method
WO2011019824A3 (en) Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
JP2017014620A5 (en)
SG10201809273VA (en) Light wave separation lattices and methods of forming light wave separation lattices
MY174619A (en) Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
GB2538874A8 (en) Selective laser melting
WO2016061468A3 (en) High-speed deposition of mixed oxide barrier films
WO2011039424A3 (en) Method and apparatus for laser ablation