SG10201406426RA - High voltage device - Google Patents
High voltage deviceInfo
- Publication number
- SG10201406426RA SG10201406426RA SG10201406426RA SG10201406426RA SG10201406426RA SG 10201406426R A SG10201406426R A SG 10201406426RA SG 10201406426R A SG10201406426R A SG 10201406426RA SG 10201406426R A SG10201406426R A SG 10201406426RA SG 10201406426R A SG10201406426R A SG 10201406426RA
- Authority
- SG
- Singapore
- Prior art keywords
- gate
- region
- drain
- substrate
- source
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
31 A method of forming a device is disclosed. The method includes providing a substrate having a device region. The device region includes a source region, a gate region and a drain region defined thereon. The substrate is prepared with gate layers on the substrate. The gate layers are patterned to form a gate in the gate region and a field structure surrounding the drain region. A source and a drain are formed in the source region and drain region respectively. The drain is separated from the gate on a second side of the gate and the source is adjacent to a first side of the gate. An interconnection to the field structure is formed. The interconnection is coupled to a potential which distributes the electric field across the substrate between the second side of the gate and the drain. Fig. 1a
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/276,301 US8790966B2 (en) | 2011-10-18 | 2011-10-18 | High voltage device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201406426RA true SG10201406426RA (en) | 2014-12-30 |
Family
ID=46967578
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201406426RA SG10201406426RA (en) | 2011-10-18 | 2011-12-15 | High voltage device |
SG2011093002A SG189600A1 (en) | 2011-10-18 | 2011-12-15 | High voltage device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2011093002A SG189600A1 (en) | 2011-10-18 | 2011-12-15 | High voltage device |
Country Status (6)
Country | Link |
---|---|
US (2) | US8790966B2 (en) |
KR (1) | KR20130042417A (en) |
CN (1) | CN103065967B (en) |
DE (1) | DE102011088638B3 (en) |
SG (2) | SG10201406426RA (en) |
TW (1) | TWI488289B (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8822291B2 (en) * | 2012-01-17 | 2014-09-02 | Globalfoundries Singapore Pte. Ltd. | High voltage device |
US8853022B2 (en) | 2012-01-17 | 2014-10-07 | Globalfoundries Singapore Pte. Ltd. | High voltage device |
US9064868B2 (en) * | 2012-10-12 | 2015-06-23 | Globalfoundries Inc. | Advanced faraday shield for a semiconductor device |
US9269761B2 (en) * | 2013-03-08 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal capacitor |
US9406764B2 (en) | 2013-06-27 | 2016-08-02 | Globalfoundries Singapore Pte. Ltd. | Simple and cost-free MTP structure |
US9818867B2 (en) * | 2013-06-27 | 2017-11-14 | Globalfoundries Singapore Pte. Ltd. | Simple and cost-free MTP structure |
US9608081B2 (en) | 2013-06-27 | 2017-03-28 | Globalfoundries Singapore Pte. Ltd. | Simple and cost-free MTP structure |
US9362374B2 (en) | 2013-06-27 | 2016-06-07 | Globalfoundries Singapore Pte. Ltd. | Simple and cost-free MTP structure |
US9515152B2 (en) | 2013-06-27 | 2016-12-06 | Globalfoundries Singapore Pte. Ltd. | Simple and cost-free MTP structure |
KR102089682B1 (en) | 2013-07-15 | 2020-03-16 | 삼성전자 주식회사 | Semiconductor device and method for fabricating the same |
US9859399B2 (en) * | 2013-11-05 | 2018-01-02 | Vanguard International Semiconductor Corporation | Lateral diffused semiconductor device with ring field plate |
US9153691B1 (en) | 2014-07-22 | 2015-10-06 | Qualcomm Incorporated | High voltage MOS transistor |
US10727122B2 (en) | 2014-12-08 | 2020-07-28 | International Business Machines Corporation | Self-aligned via interconnect structures |
US9698260B1 (en) * | 2015-12-31 | 2017-07-04 | Globalfoundries Singapore Pte. Ltd. | High voltage device with low Rdson |
CN105405891A (en) * | 2015-12-31 | 2016-03-16 | 上海华虹宏力半导体制造有限公司 | High voltage LDMOS device |
US10269783B2 (en) * | 2016-01-22 | 2019-04-23 | Arm Limited | Implant structure for area reduction |
US11011463B2 (en) * | 2016-07-01 | 2021-05-18 | Intel Corporation | Dielectric helmet-based approaches for back end of line (BEOL) interconnect fabrication and structures resulting therefrom |
CN108389906B (en) * | 2017-02-03 | 2023-01-10 | 联华电子股份有限公司 | High voltage metal oxide semiconductor transistor element |
KR102292645B1 (en) | 2017-03-09 | 2021-08-24 | 삼성전자주식회사 | Integrated circuit device |
US10090311B1 (en) * | 2017-03-21 | 2018-10-02 | Globalfoundries Singapore Pte. Ltd. | Cost-free MTP memory structure with reduced terminal voltages |
US10037988B1 (en) * | 2017-08-24 | 2018-07-31 | Globalfoundries Singapore Pte. Ltd. | High voltage PNP using isolation for ESD and method for producing the same |
US10930745B1 (en) * | 2019-11-27 | 2021-02-23 | Vanguard International Semiconductor Corporation | Semiconductor structure |
US20210193805A1 (en) * | 2019-12-18 | 2021-06-24 | Monolithic Power Systems, Inc. | Lateral transistor with lateral conductive field plate over a field plate positioning layer |
US11411086B2 (en) * | 2020-03-17 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Field plate and isolation structure for high voltage device |
US11456364B2 (en) | 2020-09-23 | 2022-09-27 | Globalfoundries U.S. Inc. | Structure and method to provide conductive field plate over gate structure |
US11532742B2 (en) | 2021-03-19 | 2022-12-20 | Globalfoundries U.S. Inc. | Integrated circuit structure with metal gate and metal field plate having coplanar upper surfaces |
US11942325B2 (en) | 2022-01-06 | 2024-03-26 | Globalfoundries U.S. Inc. | Transistor structure with gate over well boundary and related methods to form same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69616013T2 (en) * | 1995-07-19 | 2002-06-06 | Koninkl Philips Electronics Nv | SEMICONDUCTOR ARRANGEMENT OF THE HIGH VOLTAGE LDMOS TYPE |
US6207994B1 (en) * | 1996-11-05 | 2001-03-27 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
KR100302611B1 (en) * | 1999-06-07 | 2001-10-29 | 김영환 | High power semiconductor device and fabrication method thereof |
JP2004335990A (en) * | 2003-03-10 | 2004-11-25 | Fuji Electric Device Technology Co Ltd | Mis type semiconductor device |
DE102004041198B4 (en) | 2004-08-25 | 2016-06-09 | Infineon Technologies Austria Ag | Lateral semiconductor device with a field electrode and a discharge structure |
KR100628250B1 (en) | 2005-09-28 | 2006-09-27 | 동부일렉트로닉스 주식회사 | Semiconductor device for using power and method for fabricating the same |
KR100731054B1 (en) * | 2005-10-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | semiconductor device for using power and method for manufacturing the same |
US7847351B2 (en) * | 2008-04-11 | 2010-12-07 | Texas Instruments Incorporated | Lateral metal oxide semiconductor drain extension design |
US8350327B2 (en) | 2008-08-29 | 2013-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage device with reduced leakage |
JP5844956B2 (en) * | 2009-03-05 | 2016-01-20 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US8513712B2 (en) * | 2009-09-28 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for forming a semiconductor gate |
-
2011
- 2011-10-18 US US13/276,301 patent/US8790966B2/en active Active
- 2011-11-10 TW TW100141005A patent/TWI488289B/en active
- 2011-11-11 KR KR1020110117828A patent/KR20130042417A/en not_active Application Discontinuation
- 2011-12-15 CN CN201110421137.0A patent/CN103065967B/en active Active
- 2011-12-15 SG SG10201406426RA patent/SG10201406426RA/en unknown
- 2011-12-15 DE DE201110088638 patent/DE102011088638B3/en not_active Expired - Fee Related
- 2011-12-15 SG SG2011093002A patent/SG189600A1/en unknown
-
2014
- 2014-07-25 US US14/340,578 patent/US9099434B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103065967A (en) | 2013-04-24 |
DE102011088638B3 (en) | 2012-10-25 |
US20130093012A1 (en) | 2013-04-18 |
CN103065967B (en) | 2016-01-20 |
US20140332884A1 (en) | 2014-11-13 |
TWI488289B (en) | 2015-06-11 |
US9099434B2 (en) | 2015-08-04 |
US8790966B2 (en) | 2014-07-29 |
KR20130042417A (en) | 2013-04-26 |
TW201318149A (en) | 2013-05-01 |
SG189600A1 (en) | 2013-05-31 |
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