SG101424A1 - Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon - Google Patents

Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon

Info

Publication number
SG101424A1
SG101424A1 SG200003969A SG200003969A SG101424A1 SG 101424 A1 SG101424 A1 SG 101424A1 SG 200003969 A SG200003969 A SG 200003969A SG 200003969 A SG200003969 A SG 200003969A SG 101424 A1 SG101424 A1 SG 101424A1
Authority
SG
Singapore
Prior art keywords
silicon
metal oxide
alkaline earth
earth metal
oxide interface
Prior art date
Application number
SG200003969A
Inventor
Jun Wang
William Jay Ooms
Jerald Allen Hallmark
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/274,268 external-priority patent/US6248459B1/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to SG200003969A priority Critical patent/SG101424A1/en
Publication of SG101424A1 publication Critical patent/SG101424A1/en

Links

SG200003969A 1999-03-22 2000-07-17 Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon SG101424A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200003969A SG101424A1 (en) 1999-03-22 2000-07-17 Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/274,268 US6248459B1 (en) 1999-03-22 1999-03-22 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
SG200003969A SG101424A1 (en) 1999-03-22 2000-07-17 Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon

Publications (1)

Publication Number Publication Date
SG101424A1 true SG101424A1 (en) 2004-01-30

Family

ID=32599447

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200003969A SG101424A1 (en) 1999-03-22 2000-07-17 Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon

Country Status (1)

Country Link
SG (1) SG101424A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113690A (en) * 1998-06-08 2000-09-05 Motorola, Inc. Method of preparing crystalline alkaline earth metal oxides on a Si substrate
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Similar Documents

Publication Publication Date Title
SG91317A1 (en) Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
SG99871A1 (en) Method for fabricating a semiconductor structure including a metal oxide interface with silicon
SG85710A1 (en) Method for fabricating a semiconductor structure including a metal oxide interface with silicon
SG89364A1 (en) Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
GB2351844B (en) A gate structure for integrated circuit fabrication
GB9922763D0 (en) Semiconductor devices
GB9918981D0 (en) A semiconductor device
GB9907184D0 (en) A method of manufacturing a semiconductor device
SG82626A1 (en) Titanium-containing silicon oxide catalyst
SG97890A1 (en) Method for selective oxide etching in pre-metal deposition
SG105578A1 (en) A method of manufacturing a semiconductor device
GB9920496D0 (en) A semiconductor device
EP1231301A4 (en) Epitaxial silicon wafer
GB0023248D0 (en) A semiconductor structure and the method of manufacturing the same
SG106574A1 (en) Contactor sleeve assembly for a pick and place semiconductor device handler
GB2354879B (en) A semiconductor device
SG101424A1 (en) Semiconductors structure having a crystalline alkaline earth metal oxide interface with silicon
EP1087042A4 (en) Silicon wafer
HK1057220A1 (en) Eplerenone crystalline form
GB0028587D0 (en) Photovoltaic devices
SG101423A1 (en) Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
HK1043246A1 (en) Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
HK1044627A1 (en) Semiconductor structure having a crystallilne alkaline earth metal oxide interface with silicon
AU5866100A (en) Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium
AU2002241587A1 (en) Semiconductor structure including a monocrystalline conducting layer