SE9600704D0 - A susceptor for a device for epitaxially growing objects and such a device - Google Patents
A susceptor for a device for epitaxially growing objects and such a deviceInfo
- Publication number
- SE9600704D0 SE9600704D0 SE9600704A SE9600704A SE9600704D0 SE 9600704 D0 SE9600704 D0 SE 9600704D0 SE 9600704 A SE9600704 A SE 9600704A SE 9600704 A SE9600704 A SE 9600704A SE 9600704 D0 SE9600704 D0 SE 9600704D0
- Authority
- SE
- Sweden
- Prior art keywords
- susceptor
- channels
- objects
- sic
- group
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600704A SE9600704D0 (sv) | 1996-02-26 | 1996-02-26 | A susceptor for a device for epitaxially growing objects and such a device |
US08/616,646 US5674320A (en) | 1996-02-26 | 1996-03-15 | Susceptor for a device for epitaxially growing objects and such a device |
PCT/SE1997/000291 WO1997031134A1 (en) | 1996-02-26 | 1997-02-21 | A susceptor for a device for epitaxially growing objects and such a device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600704A SE9600704D0 (sv) | 1996-02-26 | 1996-02-26 | A susceptor for a device for epitaxially growing objects and such a device |
US08/616,646 US5674320A (en) | 1996-02-26 | 1996-03-15 | Susceptor for a device for epitaxially growing objects and such a device |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9600704D0 true SE9600704D0 (sv) | 1996-02-26 |
Family
ID=26662524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9600704A SE9600704D0 (sv) | 1996-02-26 | 1996-02-26 | A susceptor for a device for epitaxially growing objects and such a device |
Country Status (3)
Country | Link |
---|---|
US (1) | US5674320A (sv) |
SE (1) | SE9600704D0 (sv) |
WO (1) | WO1997031134A1 (sv) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI972874A0 (fi) * | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning foer framstaellning av tunnfilmer |
US6063186A (en) * | 1997-12-17 | 2000-05-16 | Cree, Inc. | Growth of very uniform silicon carbide epitaxial layers |
US6062851A (en) * | 1998-10-23 | 2000-05-16 | The B. F. Goodrich Company | Combination CVI/CVD and heat treat susceptor lid |
DE10055182A1 (de) * | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
US6569250B2 (en) | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
US6797069B2 (en) * | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
TWI229897B (en) * | 2002-07-11 | 2005-03-21 | Mitsui Shipbuilding Eng | Large-diameter sic wafer and manufacturing method thereof |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
US7118781B1 (en) * | 2003-04-16 | 2006-10-10 | Cree, Inc. | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
DE102004062553A1 (de) * | 2004-12-24 | 2006-07-06 | Aixtron Ag | CVD-Reaktor mit RF-geheizter Prozesskammer |
US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
US20070264427A1 (en) * | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
DE102009055747A1 (de) * | 2009-11-26 | 2011-06-09 | Olympus Winter & Ibe Gmbh | Chirurgische Zange mit Nuteingriff |
US10407769B2 (en) | 2016-03-18 | 2019-09-10 | Goodrich Corporation | Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces |
CN113355744B (zh) * | 2020-03-05 | 2022-12-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种气相外延生长装置及其衬底承载台 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
US4339645A (en) * | 1980-07-03 | 1982-07-13 | Rca Corporation | RF Heating coil construction for stack of susceptors |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
EP0164928A3 (en) * | 1984-06-04 | 1987-07-29 | Texas Instruments Incorporated | Vertical hot wall cvd reactor |
US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
US5119540A (en) * | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
JPH07176482A (ja) * | 1991-05-31 | 1995-07-14 | At & T Corp | エピタキシャル成長方法および装置 |
SE9500326D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
-
1996
- 1996-02-26 SE SE9600704A patent/SE9600704D0/sv unknown
- 1996-03-15 US US08/616,646 patent/US5674320A/en not_active Expired - Lifetime
-
1997
- 1997-02-21 WO PCT/SE1997/000291 patent/WO1997031134A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO1997031134A1 (en) | 1997-08-28 |
US5674320A (en) | 1997-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE9600704D0 (sv) | A susceptor for a device for epitaxially growing objects and such a device | |
SE9600705D0 (sv) | A susceptor for a device for epitaxially growing objects and such a device | |
SE9500326D0 (sv) | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD | |
SE9404452D0 (sv) | Semiconductor device having an insulated gate | |
DE60035255D1 (de) | Kühlkörper mit kühllamelle und befestigung derselben | |
EP0962961A3 (en) | Susceptors | |
WO1997003236A3 (en) | System and method for thermal processing of a semiconductor substrate | |
DE60102669D1 (de) | Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats | |
WO1999057751A3 (en) | Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature | |
SE9503426D0 (sv) | A device for heat treatment of objects and a method for producing a susceptor | |
UA42725C2 (uk) | Охолоджувальна плита для шахтних печей | |
DE69319360T2 (de) | Heteroübergang-Bipolartransistor mit Siliziumkarbid | |
AU2003213114A1 (en) | Silicon carbide bipolar junction transistor with overgrown base region | |
DE60045708D1 (de) | Bipolarer transistor | |
DE59506182D1 (de) | Elektrisches heizelement | |
AU2826401A (en) | Silicon carbide element | |
JPS6455862A (en) | Heterojunction transistor and manufacture thereof | |
AU4596500A (en) | Method and apparatus for epitaxially growing a material on substrate | |
DE9412460U1 (de) | Kühlvorrichtung für elektrische bzw. elektronische Bauelemente mit einer Grundplatte und mit Kühlelementen | |
SU1625263A1 (ru) | СПОСОБ ПОЛУЧЕНИЯ КРЕМНИЕВЫХ ЭПИТАКСИАЛЬНЫХ СЛОЕВ р-ТИПА ПРОВОДИМОСТИ | |
JPH02305524A (ja) | 断熱効果のある鍋 | |
LUTKOV et al. | Investigation of the thermal and electrical conductivities of silicified graphites(Si and silicon carbide effects on silicided graphite thermal and electrical conductivities) | |
JPS5780741A (en) | Active matrix substrate | |
JPS5391076A (en) | Gas phase reaction apparatus | |
JPS57106598A (en) | Semiconductor crystal growing device |