SE7709165L - GAS SETTING OF ALUMINUM AND ALUMINUM OXIDE - Google Patents
GAS SETTING OF ALUMINUM AND ALUMINUM OXIDEInfo
- Publication number
- SE7709165L SE7709165L SE7709165A SE7709165A SE7709165L SE 7709165 L SE7709165 L SE 7709165L SE 7709165 A SE7709165 A SE 7709165A SE 7709165 A SE7709165 A SE 7709165A SE 7709165 L SE7709165 L SE 7709165L
- Authority
- SE
- Sweden
- Prior art keywords
- aluminum
- gas setting
- aluminum oxide
- oxide
- gas
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA259,126A CA1059882A (en) | 1976-08-16 | 1976-08-16 | Gaseous plasma etching of aluminum and aluminum oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7709165L true SE7709165L (en) | 1978-02-17 |
Family
ID=4106655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7709165A SE7709165L (en) | 1976-08-16 | 1977-08-12 | GAS SETTING OF ALUMINUM AND ALUMINUM OXIDE |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5322836A (en) |
CA (1) | CA1059882A (en) |
DE (1) | DE2730156C2 (en) |
FR (1) | FR2362216A1 (en) |
GB (1) | GB1554335A (en) |
NL (1) | NL7706627A (en) |
SE (1) | SE7709165L (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54118172A (en) * | 1978-03-06 | 1979-09-13 | Nichiden Varian Kk | Method of dry etching aluminum |
US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4256534A (en) * | 1978-07-31 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
DE2924475A1 (en) * | 1979-06-18 | 1981-01-15 | Siemens Ag | Metallising of semiconductor crystals - where semiconductor is covered with metal and then with metal oxide which aids the adhesion of photolacquer masks |
JPS5623745A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Plasma etching device |
DE3030814C2 (en) * | 1979-08-17 | 1983-06-16 | Tokuda Seisakusyo, Ltd., Zama, Kanagawa | Process for plasma etching a workpiece |
JPS5747876A (en) * | 1980-09-03 | 1982-03-18 | Toshiba Corp | Plasma etching apparatus and method |
DE3103177A1 (en) * | 1981-01-30 | 1982-08-26 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING POLYSILIZIUM STRUCTURES UP TO THE 1 (MY) M AREA ON SUBSTRATES CONTAINING INTEGRATED SEMICONDUCTOR CIRCUITS BY PLASMA |
US4426246A (en) * | 1982-07-26 | 1984-01-17 | Bell Telephone Laboratories, Incorporated | Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch |
JP2861785B2 (en) * | 1994-02-15 | 1999-02-24 | 日本電気株式会社 | Method for forming wiring of semiconductor device |
US9520303B2 (en) * | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
-
1976
- 1976-08-16 CA CA259,126A patent/CA1059882A/en not_active Expired
-
1977
- 1977-06-13 GB GB24546/77A patent/GB1554335A/en not_active Expired
- 1977-06-16 NL NL7706627A patent/NL7706627A/en not_active Application Discontinuation
- 1977-07-04 DE DE2730156A patent/DE2730156C2/en not_active Expired
- 1977-08-02 JP JP9230477A patent/JPS5322836A/en active Granted
- 1977-08-12 SE SE7709165A patent/SE7709165L/en unknown
- 1977-08-16 FR FR7725071A patent/FR2362216A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPS5745310B2 (en) | 1982-09-27 |
FR2362216A1 (en) | 1978-03-17 |
DE2730156A1 (en) | 1978-02-23 |
JPS5322836A (en) | 1978-03-02 |
DE2730156C2 (en) | 1986-01-16 |
CA1059882A (en) | 1979-08-07 |
GB1554335A (en) | 1979-10-17 |
NL7706627A (en) | 1978-02-20 |
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