SE411980B - Halvledaranordning - Google Patents
HalvledaranordningInfo
- Publication number
- SE411980B SE411980B SE7600780A SE7600780A SE411980B SE 411980 B SE411980 B SE 411980B SE 7600780 A SE7600780 A SE 7600780A SE 7600780 A SE7600780 A SE 7600780A SE 411980 B SE411980 B SE 411980B
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/553,151 US3999217A (en) | 1975-02-26 | 1975-02-26 | Semiconductor device having parallel path for current flow |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7600780L SE7600780L (sv) | 1976-08-27 |
SE411980B true SE411980B (sv) | 1980-02-11 |
Family
ID=24208317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7600780A SE411980B (sv) | 1975-02-26 | 1976-01-26 | Halvledaranordning |
Country Status (9)
Country | Link |
---|---|
US (1) | US3999217A (sv) |
JP (1) | JPS51109780A (sv) |
BE (1) | BE838943A (sv) |
CA (1) | CA1041674A (sv) |
DE (1) | DE2607202B2 (sv) |
FR (1) | FR2302591A1 (sv) |
GB (1) | GB1522411A (sv) |
IT (1) | IT1050057B (sv) |
SE (1) | SE411980B (sv) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2656420A1 (de) * | 1976-12-13 | 1978-06-15 | Siemens Ag | Transistor mit innerer gegenkopplung |
US4162177A (en) * | 1977-03-28 | 1979-07-24 | Solarex Corporation | Method of forming solar cell with discontinuous junction |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3617828A (en) * | 1969-09-24 | 1971-11-02 | Gen Electric | Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region |
US3735358A (en) * | 1970-12-31 | 1973-05-22 | Ibm | Specialized array logic |
US3676229A (en) * | 1971-01-26 | 1972-07-11 | Rca Corp | Method for making transistors including base sheet resistivity determining step |
JPS4827507A (sv) * | 1971-08-18 | 1973-04-11 | ||
JPS5213918B2 (sv) * | 1972-02-02 | 1977-04-18 |
-
1975
- 1975-02-26 US US05/553,151 patent/US3999217A/en not_active Expired - Lifetime
- 1975-12-11 IT IT30212/75A patent/IT1050057B/it active
-
1976
- 1976-01-26 SE SE7600780A patent/SE411980B/sv unknown
- 1976-02-03 CA CA244,899A patent/CA1041674A/en not_active Expired
- 1976-02-18 FR FR7604462A patent/FR2302591A1/fr not_active Withdrawn
- 1976-02-19 GB GB6579/76A patent/GB1522411A/en not_active Expired
- 1976-02-23 DE DE2607202A patent/DE2607202B2/de not_active Withdrawn
- 1976-02-25 BE BE164647A patent/BE838943A/xx unknown
- 1976-02-25 JP JP51020549A patent/JPS51109780A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2302591A1 (fr) | 1976-09-24 |
CA1041674A (en) | 1978-10-31 |
GB1522411A (en) | 1978-08-23 |
SE7600780L (sv) | 1976-08-27 |
IT1050057B (it) | 1981-03-10 |
JPS51109780A (en) | 1976-09-28 |
JPS5526625B2 (sv) | 1980-07-15 |
US3999217A (en) | 1976-12-21 |
DE2607202A1 (de) | 1976-09-09 |
BE838943A (fr) | 1976-06-16 |
DE2607202B2 (de) | 1978-10-12 |
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