SE348381B - - Google Patents
Info
- Publication number
- SE348381B SE348381B SE14207/68A SE1420768A SE348381B SE 348381 B SE348381 B SE 348381B SE 14207/68 A SE14207/68 A SE 14207/68A SE 1420768 A SE1420768 A SE 1420768A SE 348381 B SE348381 B SE 348381B
- Authority
- SE
- Sweden
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR125392 | 1967-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE348381B true SE348381B (xx) | 1972-09-04 |
Family
ID=8640499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE14207/68A SE348381B (xx) | 1967-10-23 | 1968-10-21 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3755541A (xx) |
| JP (1) | JPS4937040B1 (xx) |
| AT (1) | AT291193B (xx) |
| BE (1) | BE722670A (xx) |
| CH (1) | CH521287A (xx) |
| DE (1) | DE1804168A1 (xx) |
| FR (1) | FR1552005A (xx) |
| GB (1) | GB1206500A (xx) |
| NL (1) | NL6815009A (xx) |
| NO (1) | NO124829B (xx) |
| SE (1) | SE348381B (xx) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE377108B (xx) * | 1970-03-27 | 1975-06-23 | Kanegafuchi Spinning Co Ltd | |
| US4029844A (en) * | 1973-04-24 | 1977-06-14 | Atlantic Research Corporation | Rocket nozzle comprising pyrolytic graphite-silicon carbide inserts |
| US3979500A (en) * | 1973-05-02 | 1976-09-07 | Ppg Industries, Inc. | Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides |
| DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
| US4295890A (en) * | 1975-12-03 | 1981-10-20 | Ppg Industries, Inc. | Submicron beta silicon carbide powder and sintered articles of high density prepared therefrom |
| US4468474A (en) * | 1983-05-16 | 1984-08-28 | Allied Corporation | Iron/silicon-based catalyst exhibiting high selectivity to C2 -C62 Fischer-Tropsch reactions |
| US4891339A (en) * | 1987-10-23 | 1990-01-02 | Aerochem Research Laboratories, Inc. | Process and apparatus for the flame preparation of ceramic powders |
| JP3384242B2 (ja) * | 1996-03-29 | 2003-03-10 | 株式会社豊田中央研究所 | 炭化珪素単結晶の製造方法 |
| US7247513B2 (en) * | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
| JP4662034B2 (ja) * | 2005-04-14 | 2011-03-30 | 日立電線株式会社 | 炭化珪素単結晶の製造方法 |
| WO2014027472A1 (ja) * | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
-
1967
- 1967-10-23 FR FR125392A patent/FR1552005A/fr not_active Expired
-
1968
- 1968-10-19 NL NL6815009A patent/NL6815009A/xx unknown
- 1968-10-19 DE DE19681804168 patent/DE1804168A1/de active Pending
- 1968-10-21 NO NO4160/68A patent/NO124829B/no unknown
- 1968-10-21 AT AT1024468A patent/AT291193B/de not_active IP Right Cessation
- 1968-10-21 BE BE722670D patent/BE722670A/xx unknown
- 1968-10-21 SE SE14207/68A patent/SE348381B/xx unknown
- 1968-10-21 CH CH1572068A patent/CH521287A/de not_active IP Right Cessation
- 1968-10-22 GB GB50008/68A patent/GB1206500A/en not_active Expired
- 1968-10-22 US US00769481A patent/US3755541A/en not_active Expired - Lifetime
- 1968-10-23 JP JP43076864A patent/JPS4937040B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AT291193B (de) | 1971-07-12 |
| JPS4937040B1 (xx) | 1974-10-04 |
| BE722670A (xx) | 1969-04-21 |
| FR1552005A (xx) | 1969-01-03 |
| GB1206500A (en) | 1970-09-23 |
| NO124829B (xx) | 1972-06-12 |
| DE1804168A1 (de) | 1969-06-04 |
| CH521287A (de) | 1972-04-15 |
| NL6815009A (xx) | 1969-04-25 |
| US3755541A (en) | 1973-08-28 |