SE0500703L - Integrerad fotonisk krets - Google Patents

Integrerad fotonisk krets

Info

Publication number
SE0500703L
SE0500703L SE0500703A SE0500703A SE0500703L SE 0500703 L SE0500703 L SE 0500703L SE 0500703 A SE0500703 A SE 0500703A SE 0500703 A SE0500703 A SE 0500703A SE 0500703 L SE0500703 L SE 0500703L
Authority
SE
Sweden
Prior art keywords
mmi
photonic circuit
integrated photonic
ports
port
Prior art date
Application number
SE0500703A
Other languages
English (en)
Other versions
SE529492C2 (sv
Inventor
Pierre-Jean Rigole
Jan-Olof Wesstroem
Original Assignee
Syntune Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US11/909,776 priority Critical patent/US7957618B2/en
Application filed by Syntune Ab filed Critical Syntune Ab
Priority to SE0500703A priority patent/SE529492C2/sv
Priority to PCT/SE2006/000342 priority patent/WO2006104441A1/en
Publication of SE0500703L publication Critical patent/SE0500703L/sv
Publication of SE529492C2 publication Critical patent/SE529492C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
    • G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12154—Power divider
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12159—Interferometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
SE0500703A 2005-03-31 2005-03-31 Integrerad fotonisk krets SE529492C2 (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/909,776 US7957618B2 (en) 2005-03-31 2005-03-17 Integrated photonic circuit
SE0500703A SE529492C2 (sv) 2005-03-31 2005-03-31 Integrerad fotonisk krets
PCT/SE2006/000342 WO2006104441A1 (en) 2005-03-31 2006-03-17 Integrated photonic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0500703A SE529492C2 (sv) 2005-03-31 2005-03-31 Integrerad fotonisk krets

Publications (2)

Publication Number Publication Date
SE0500703L true SE0500703L (sv) 2006-10-01
SE529492C2 SE529492C2 (sv) 2007-08-28

Family

ID=37053635

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0500703A SE529492C2 (sv) 2005-03-31 2005-03-31 Integrerad fotonisk krets

Country Status (3)

Country Link
US (1) US7957618B2 (sv)
SE (1) SE529492C2 (sv)
WO (1) WO2006104441A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8643943B2 (en) 2008-04-30 2014-02-04 Nec Corporation Tunable laser source using intracavity laser light outcoupling and module containing the same
CN101726800B (zh) * 2009-12-16 2013-02-27 东南大学 基于光子晶体的低片内反射型光功率分路器
US8728863B2 (en) 2011-08-09 2014-05-20 Soitec Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
US8617925B2 (en) 2011-08-09 2013-12-31 Soitec Methods of forming bonded semiconductor structures in 3D integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods
US8842945B2 (en) 2011-08-09 2014-09-23 Soitec Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
KR20130104541A (ko) 2012-03-14 2013-09-25 한국전자통신연구원 파장가변 레이저 모듈

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3943615B2 (ja) * 1995-11-06 2007-07-11 シャープ株式会社 光回路素子およびそれを用いた集積型光回路装置
JPH11237517A (ja) * 1998-02-23 1999-08-31 Fujitsu Ltd 光導波路素子
SE516882C2 (sv) * 1998-12-23 2002-03-19 Ericsson Telefon Ab L M Anordning för att reflektera ljus
US7310363B1 (en) * 1999-09-28 2007-12-18 The Regents Of The University Of California Integrated wavelength tunable single and two-stage all-optical wavelength converter
JP2004170764A (ja) * 2002-11-21 2004-06-17 Mitsubishi Electric Corp 半導体光導波路装置
KR100547757B1 (ko) * 2003-06-05 2006-01-31 삼성전자주식회사 반사기를 구비하는 양방향 광송수신 모듈
US7633988B2 (en) * 2003-07-31 2009-12-15 Jds Uniphase Corporation Tunable laser source with monolithically integrated interferometric optical modulator

Also Published As

Publication number Publication date
SE529492C2 (sv) 2007-08-28
US20100183043A1 (en) 2010-07-22
US7957618B2 (en) 2011-06-07
WO2006104441A1 (en) 2006-10-05

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Legal Events

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