RU94039535A - Lamellar crystalline material and a method of its preparing - Google Patents
Lamellar crystalline material and a method of its preparingInfo
- Publication number
- RU94039535A RU94039535A RU94039535/26A RU94039535A RU94039535A RU 94039535 A RU94039535 A RU 94039535A RU 94039535/26 A RU94039535/26 A RU 94039535/26A RU 94039535 A RU94039535 A RU 94039535A RU 94039535 A RU94039535 A RU 94039535A
- Authority
- RU
- Russia
- Prior art keywords
- bismuth
- crystalline material
- chalcogenid
- crystal
- ampoule
- Prior art date
Links
- 239000002178 crystalline material Substances 0.000 title claims abstract 9
- 238000000034 method Methods 0.000 title claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 8
- 239000013078 crystal Substances 0.000 claims abstract 7
- 239000000463 material Substances 0.000 claims abstract 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000003708 ampul Substances 0.000 claims abstract 4
- 239000012535 impurity Substances 0.000 claims abstract 4
- 229910052744 lithium Inorganic materials 0.000 claims abstract 4
- 239000003990 capacitor Substances 0.000 claims abstract 2
- 230000007547 defect Effects 0.000 claims abstract 2
- 238000002844 melting Methods 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims abstract 2
- -1 bismuth chalcogenide Chemical class 0.000 claims 3
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 230000002687 intercalation Effects 0.000 claims 1
- 238000009830 intercalation Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
FIELD: monocrystalline materials of high quality. SUBSTANCE: lamellar monocrystalline material showing low defect level and the corresponding distribution of impurities that allows to intercalate at least 3 mole lithium into van der Waals channel per one mole of crystalline material without significant crystalline lattice distortion. Also, change of Gibbs free energy does not depend of lithium concentration incorporation. Material is prepared by the sequence stages. Ampoule is filled with stoichiometric amount of chalcogenid element and bismuth under nonoxidizing atmosphere and sealed. Then ampoule is heated to temperature 5-10 C above of bismuth chalcogenid melting point and cooled to the room temperature. Obtained polycrystalline bismuth chalcogenid is contacted with seeding crystal with specific structure of crystalline lattice. Obtained harmless nondefected monocrystal of bismuth chalcogenid is cooled to the room temperature. Some admixtures can be added to the prepared crystalline material to obtain highly intercalated crystalline material. Obtained crystalline material is used as active battery member, thermoelectric device and capacitor. EFFECT: enhanced quality of material.
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78452591A | 1991-10-29 | 1991-10-29 | |
US07/784525 | 1991-10-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
RU94039535A true RU94039535A (en) | 1996-04-27 |
Family
ID=25132700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU94039535/26A RU94039535A (en) | 1991-10-29 | 1994-04-28 | Lamellar crystalline material and a method of its preparing |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0662251A1 (en) |
JP (1) | JPH07505246A (en) |
CN (1) | CN1074249A (en) |
AU (1) | AU3176693A (en) |
CA (1) | CA2122369A1 (en) |
IL (1) | IL103583A0 (en) |
RU (1) | RU94039535A (en) |
WO (1) | WO1993008981A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4439660B2 (en) * | 2000-03-06 | 2010-03-24 | パナソニック株式会社 | Nonaqueous electrolyte secondary battery |
CN100419130C (en) * | 2004-11-03 | 2008-09-17 | 中国科学技术大学 | Sb2Te3 monocrystalline nanometer line ordered array and its preparation method |
KR101680763B1 (en) | 2010-03-31 | 2016-11-29 | 삼성전자주식회사 | Thermoelectric materials, and thermoelectric module and thermoelectric device comprising same |
KR101695540B1 (en) * | 2015-04-14 | 2017-01-23 | 엘지전자 주식회사 | Thermoelectric materials, and thermoelectric element and thermoelectric module comprising the same |
CN113363493A (en) * | 2021-06-25 | 2021-09-07 | 惠州亿纬锂能股份有限公司 | Single crystal ternary positive electrode material, preparation method and battery |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3877988A (en) * | 1973-03-21 | 1975-04-15 | Mallory & Co Inc P R | Lithium-metal telluride organic electrolyte cell |
-
1992
- 1992-10-29 CN CN92113391A patent/CN1074249A/en active Pending
- 1992-10-29 AU AU31766/93A patent/AU3176693A/en not_active Abandoned
- 1992-10-29 JP JP5508566A patent/JPH07505246A/en active Pending
- 1992-10-29 CA CA002122369A patent/CA2122369A1/en not_active Abandoned
- 1992-10-29 EP EP93900503A patent/EP0662251A1/en not_active Withdrawn
- 1992-10-29 WO PCT/US1992/009243 patent/WO1993008981A2/en not_active Application Discontinuation
- 1992-10-29 IL IL103583A patent/IL103583A0/en unknown
-
1994
- 1994-04-28 RU RU94039535/26A patent/RU94039535A/en unknown
Also Published As
Publication number | Publication date |
---|---|
AU3176693A (en) | 1993-06-07 |
IL103583A0 (en) | 1993-03-15 |
JPH07505246A (en) | 1995-06-08 |
CN1074249A (en) | 1993-07-14 |
EP0662251A1 (en) | 1995-07-12 |
WO1993008981A3 (en) | 1993-06-10 |
WO1993008981A2 (en) | 1993-05-13 |
CA2122369A1 (en) | 1993-05-13 |
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